IN5834
Abstract: IN5833 IN5832 N5834 1N5 diode 1N5832 1N5833
Contextual Info: IN5832 1N5833 IN5834 I HOT CARRIER POWER RECTIFIER I , employing the Schottky Barrier principle in a large area metal-to-silicon power diode, State of the art’geometrv features epitaxial construction with oxide passivation and metal overlap contact. Ideallv suited for use as rectifiers in low-voltage,
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in58321n5833in5834in5833+3n58341n5 diode1n5832
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TIC2260
Abstract: C10601 SC141D IN5829 IN3492 in540i IN1190 IN3493 IN1183A IN1184
Contextual Info: G EN ERA L PURPOSE R ECTIFO SS 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR 82 ÍE1 02553511 n""""35 11 I 820 00035 o r~ Of-o / lo AVERAGE RECTIFIED FORWARD CURRENT AMPERES VRRM 50 100 150 200 300 400 500 600 700 800 900 1000 1200 IFSM VFM Ca s é 3 3 5 6 MR500
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ddqd035mr500in5400in1612+16in1341amr750in1199ain3208in248bin1191atic2260c10601sc141din5829in3492in540iin1190in3493in1183ain1184
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TIC2260
Abstract: t25000 IN1190 IN5829 IN3492 IN1184A sc1430 jb33 IN2158 in5834
Contextual Info: G E K E R A LP U R P O S E R EC TïFISR S 0258354 A D VA N CED S E M IC O N D U C T O R 82 tEl Q25a3Sl<0000035 ° I 82D 00035 o r - o / - o f lo AV ER A G E R ECTIFIED FORW ARD C U R R EN T AM PERES VRRM 50 100 150 200 300 400 500 600 700 800 900 1000 1200
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mr500in5400in1612in1341a+16mr750in1199ain3208in248bin1191ain2154tic2260t25000in1190in5829in3492in1184asc1430jb33in2158in5834
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SD5115
Abstract: IN3492 in1615 IN1202A IN5829 IN3495 IN3491 in3493 IN3880 2N15
Contextual Info: GENERAL PURPOSE RECTIFOSS 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR 82 ÍE102553511 n""""35 11I 820 00035 o r ~ O f - o / lo A V ER A G E REC TIFIED FORW ARD C U R R EN T AM PERES VRRM 50 100 150 200 300 400 500 600 700 800 900 1000 1200 IFSM V FM Ca s é 3 3
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mr500mr501mr502mr504+13mr506mr508mr510in3491in3492in3493sd5115in1615in1202ain5829in3495in38802n15
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in5388
Abstract: 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic
Contextual Info: THE SEMICONDUCTOR DATA LIBRARY r*^r* fe SER IES A V O LU M E II i«»* »^ 'i1? prepared by Technicallnformation Center The inform ation in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this inform ation does not convey to the purchaser of semiconductor
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plu300in53882n5161germanium+64m28germanium drift transistor2n50701ns2482n5271inverter welder 4 schematic
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TIC2260
Abstract: IN3491 IN1202 IN3492 IN5829 IN1204 IN1190 IN1184 SC141D IN3495
Contextual Info: r lo AVERAGE RECTIFIED FORWARD CURRENT AMPERES VRRM 50 100 150 200 300 400 500 600 700 800 900 1000 1200 IFSM VFM Ca s é 3 3 5 6 MR500 MR501 IN5400 IN5401 ÍN1612 IN1613 MR502 IN5402 IN1614 IN1341A IN1342A IN1343A IN1344A MR504 IN5404 ¡N1615 MR506 IN5406
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mr500in5400in1612in1341a+16mr750in1199ain3208in248bin1191an2154tic2260in3491in1202in3492in5829in1204in1190in1184sc141din3495
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1N5160
Abstract: MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt
Contextual Info: DEVICE INDEX Devices characterized in Volume II show the page reference only. Devices characterized in Volume I are referenced by volume and page number. DEVICE 1N5000 1N5001 1N5002 1N5003 1 N 5 1 3 9 .A 1 N 5 1 4 0 .A 1 N 5 1 4 1 .A 1 N 5 1 4 2 .A 1 N 5 1 4 3 .A
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1n50001n50011n50021n5003+141n51491n51501n51531n51551n51581n51591n5160max 6438 geo semiconductors2n6058transistor bf 1752n39022n56961n5788germanium itt
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