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Amphenol PCD SIMEG0108PNSealed Male Grounded Module Size 8; |Amphenol Pcd SIMEG0108PN |
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SIMEG0108PN | Bulk | 25 |
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SIMEG0108PN |
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Amphenol PCD SIMEG0118PNSealed Male Grounded Module Size 8; |Amphenol Pcd SIMEG0118PN |
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TURCK Inc BIM-EG08-Y1XBim; |Turck BIM-EG08-Y1X |
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TURCK Inc BIM-EG08-AN6XBim; |Turck BIM-EG08-AN6X |
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TURCK Inc BIM-EG08-AP6XBim; |Turck BIM-EG08-AP6X |
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IMEG Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: ^EDI EDI8F81027C aECTROMC D E K N IIN C . IMegiS SRAM Module 1Megx8StaticRAM CMOS, Module F e a tu re s 1 Meg x 8 bit CM OS Static Random Access Memory • Access Times 55 thru 100ns • Data Retention Function EDI8F81027LP • TTL Compatible Inputs and Outputs |
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edi8f81027c512kx8edi8f81027lp100ns+3 | |
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Contextual Info: EDI68128C K 1 Megabit USKxS UV Erasable CMOS EPROM A ELECTROMC DC9GN& N C IMegabit (512Kx8) UV Erasable CMOS EPROM Features Fast Read Access Time - 45ns Low Power CMOS Operation The EDI68128C is a low-power, high performance, 1,048,576-bit ultraviolet erasable programmable read |
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edi68128cat27c010200ma512kx8+5 | |
TRW Connectors
Abstract: marking B26 diode SCHOTTKY trw resistor 810 souriau Schottky Diode B29 A2-15 SOURIAU Robinson Nugent pga 1020J1C 1N5818 74LS174
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tdc102010-bit20mspstrw connectors+9 | |
linvex technology
Abstract: SST superflash 5555 QT
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lx59cf4010a0-a18a0-a16a17-a18+4 | |
HCT112
Abstract: HCT-112 74HC 74HCT S0 1J
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74hc/hct112hct112hct-11274hc+2 | |
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Contextual Info: SAMSUNG SEMICONDUCTOR INC 11 Ï E 1 71^4142 ODDBbb11! KMM411024/KMM511024 KMM411025/KMM511025 *i 1~~ SAM SUNG Semiconductor Preliminary IMeg X 1 DRAM SIP and SIMM Memory Modules JULY 1987 FEATURES GENERAL DESCRIPTION The Samsung KM M 4U024, KMM411025, KMM511024 and KMM511025, are 1M x 1 dynamic RAM |
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kmm411024/kmm511024kmm411025/kmm5110254u024kmm411025+5 | |
1024Kx8Contextual Info: ^EDI EDI8F81024C EL fCm ON C DESIGNS N C IMegxB SRAM Module 1Klegx8 Static RAM Features CMOS, Module 1024Kx8 bit CMOS Static The EDI8F81024C is a 8 Megabit CMOS Static RAM based Random Access Memory on eight 128Kx8 Static RAMs mounted on a multi-layered • Access Times 70 thru 100ns |
OCR Scan |
edi8f81024c1024kx8100nsedi8f81024lp+3 | |
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Contextual Info: W 3X EDI411024C m g x 1 Fast Page DRAM ELECTRONIC DESIGNS, INC. IMegabitx 1Dynamic RAM CMOS, Monolithic Tîie EDI411204C is a high performance, low power CMOS Features Dynamic RAM organized as 1Megabit x1. During Read and Write cycles each bit is addressed |
OCR Scan |
edi411024cedi411204cedi411024crev20leadcs0j | |
RAS 0910Contextual Info: ^EDI EDI411024C 1Megx1 Fast Page DRAM ELECTRONIC DESIGNS, INC IMegabitx 1 Dynamic RAM CMOS, Monolithic The EDI411204C is a high performance, low power CMOS Features Dynamic RAM organized as 1 Megabit x1. During Read and Write cycles each bit is addressed 1Mx1 bit CMOS Dynamic |
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edi411024c100nsedi411204cedi411024c70zb+3 | |
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Contextual Info: J PRELIMINARY INFORMATION IMegabit Module XM28C010 f i a r 128K x 8 Bit Electrically Erasable PROM FEATURES • High Density IMegabit 128K x 8 E2PR0M Module • Access Time of 250 ns at -55°C to + 125°C • Base Memory Component: Xicor CMOS X2UC256 • JEDEC Standard 32-Pin 600 Mil Wide |
OCR Scan |
xm28c010x2uc25632-pinx28c010+2 | |
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Contextual Info: ^EDL ED1411024C IMegxl Fast Page DRAM ELECTRONIC CCSGN& NC 1Megabitx1 DynamicRAM CMOS,Monolithic The EDI411204C is a high performance, low power C M O S ¡Features Dynamic RAM organized a s 1Megabit x1. During Read and Write cycles each bit is addressed 1Mx1 bit C M O S Dynamic |
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ed1411024c100nsedi411204cedi411024c70zb+6 | |
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Contextual Info: ^EDL EDI8F81026C IMegxB SRAM Module EIECTPOWC DESIGNS NC. 1 Megabit x 8 Static RAM CMOS, Module with Revolutionary Pinout Features 1 Meg x 8 bit CMOS Static The EDI8F81026C is an 8 Megabit CMOS Static RAM based Random Access Memory on two 512Kx8 Static RAMs mounted on a multi-layered |
OCR Scan |
edi8f81026c512kx8/777//7t77/7edi8f81026c20m6c+3 | |
RAS 0910Contextual Info: ^EDI EDI411024C 1Megx1 Fast Page DRAM ELECTRONIC OESIGNSL HC. IMegabitx 1 Dynamic RAM CMOS, Monolithic Features 1Mx1 bit CMOS Dynamic Random Access Memory • Access Times 70 ,80,100ns • 8ms Refresh Rate • Low Operating Power Dissipation • Low Standby Power |
OCR Scan |
100nsedi411024cedi411204c20leadcs+3 | |
ECG953
Abstract: ECG954 ECG963 ECG964
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dgd5137ecg953ecg954ecg95x+3 | |
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Contextual Info: Freescale Semiconductor Advance Information Document Number: MC10XSD200 Rev. 2.0, 9/2013 Dual 10 mOhm High Side Switch 10XSD200 The 10XSD200 device is part of a 36 V dual high side switch product family with integrated control, and a high number of protective and |
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mc10xsd20010xsd20016-bit | |
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Contextual Info: Freescale Semiconductor Advance Information Document Number: MC16XSD200 Rev. 1.0, 7/2013 Dual 16 mOhmHigh Side Switch 16XSD200 The 16XSD200 device is part of a 36 V dual high side switch product family with integrated control, and a high number of protective and |
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mc16xsd20016xsd20016-bit | |
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Contextual Info: Freescale Semiconductor Advance Information Document Number: MC10XS4200 Rev. 3.0, 5/2013 Dual 24 V, 10 mOhm High Side Switch 10XS4200 The 10XS4200 device is part of a 24 V dual high side switch product family with integrated control, and a high number of protective and |
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mc10xs420010xs420016-bit | |
OAK TECHNOLOGY
Abstract: oti-067 OTI067 OTI-077 oak technology oti 067 cga to vga Hercules Graphics Card oak oti-067 128x48 96x64
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b72t40500d017sott-077oti-077+11 | |
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Contextual Info: Hybrid Chip and HDI Components Nichrome on Alumina Chip Resistors Chips as Networks Features Detailed Specifications For detailed specifications, and outlined drawings and ordering information see the Network Section of this catalog, page 16. Microwave Chip Resistors |
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6AK5W
Abstract: 6ak5 tube 6AK5 5651 tube MVAE 6ak5w tube Scans-0017480 5654
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654/6ak5w/60965654/6ak5w/60966ak5w6ak5 tube+6 | |
OTI-087
Abstract: OTI-068 80386dx memory interfacing TL016 80386 chipset CHIPset for 80286 128x48 486 system bus 80386DX 80486
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0000apioti-08724-bit640x480+12 | |
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Contextual Info: Freescale Semiconductor Advance Information Document Number: MC06XS4200 Rev. 2.0, 5/2013 Dual 24 V, 6.0 mOhm High Side Switch 06XS4200 The 06XS4200 device is part of a 24 V dual high side switch product family with integrated control and a high number of protective and |
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mc06xs420006xs420016-bit | |
LMC668Contextual Info: PRELIM IN A R Y LMC668A/LMC668 Chopper Stabilized Operational Amplifier G eneral D escription The LMC668 is a high performance versatile chopper-stabi lized amplifier with low input offset voltage. This low offset is achieved through a nulling scheme that provides continuous |
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lmc668a/lmc668lmc66814-pinhelmc668a/ | |
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Contextual Info: HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS EL2029/EL2029C 0,01 % 200 US Op A TflJ ' Gemi, O f 5 Stttblc F e a tu r e s G e n e ra l D e sc r ip tio n • Settling tim e for 10V swings to 0.1% of 100 ns; to 0.01% of 200 ns • High slew rate—900 V/ is • Large power bandwidth—5 M Hz |
OCR Scan |
el2029/el2029cmil-std-883el202980meg | |