XM28C010 Search Results

XM28C010P

Contextual Info: XM28C010P 1 Megabit Puma Module 32K x 32 Bit High Speed 5 Volt Byte Alterable Nonvolatile Memory Array • High Reliability —Endurance: 100,000 Cycles —Data Retention: 100 Years FEATURES • High Speed, High Density Memory Module —150ns, 120ns, 90ns and 70ns Access Times

Contextual Info: XIC GR INC ^^41743 SBE ]> □ □ □ 3 7 h 2 D 41 « X I C Preliminary Information 1 Megabit Module XM28C010 128K X 8 Bit 5 Volt, Byte Alterable E2PROM TYPICAL FEATURES • High Density 1 Megabit 128K x 8 E2PROM Module • Access Time of 120 ns at -55°C to +125°C

X28C010

Abstract: X28C256 XM28C010 XM28C010I
Contextual Info: Prelim inary Inform ation 1 Megabit Module U XM28C010 r 1 28 K x 8 Bit 5 Volt, Byte Alterable E2PROM TYPICAL FEATURES • Fast Write Cycle Times Supported by: — Internal Program Cycle 10 ms Max. — 64-byte Page — DATA Polling — Toggle Status Bit • High Rel Module Available with:

XM28C010P

Contextual Info: XM28C010P 1 Megabit Puma Module 32K x 32 Bit High Speed 5 Volt Byte Alterable Nonvolatile Memory Array • High Reliability —Endurance: 100,000 Cycles —Data Retention: 100 Years FEATURES • High Speed, High Density Memory Module —150ns, 120ns, 90ns and 70ns Access Times

Contextual Info: XM28C010P 1 Megabit Puma Module 32K x 32 Bit • High Reliability —Endurance: 100,000 Cycles —Data Retention: 100 Years CE1 P ro The module is configured with four separate chip enable and write enable inputs and 32 separate I/Os. This, along with the small footprint, provides the end

Contextual Info: J PRELIMINARY INFORMATION IMegabit Module XM28C010 f i a r 128K x 8 Bit Electrically Erasable PROM FEATURES • High Density IMegabit 128K x 8 E2PR0M Module • Access Time of 250 ns at -55°C to + 125°C • Base Memory Component: Xicor CMOS X2UC256 • JEDEC Standard 32-Pin 600 Mil Wide

Contextual Info: 1 Megabit Puma XM28C010P Module 32K X 32 Bit High Speed 5 Volt Byte Alterable Nonvolatile Memory Array FEATURES • High Reliability — Endurance: 100,000 Cycles — Data Retention: 100 Years • High Speed, High Density Memory Module — 150ns, 120ns, 90ns and 70ns Access Times

Xicor 28C010

Contextual Info: Preliminary Information 1 Megabit Module t XM28C010 a 128K x 8 Bit 5 Volt, Byte Alterable E2PROM T Y P IC A L F E A T U R E S • High Density 1 Megabit 128K x 8 E2PROM Module • Access Tim e of 120 ns at -5 5 °C to +125°C • SIMPLE Byte and Page Write

Contextual Info: X Preliminary Information 1 Megabit Module XM 28C010 H S T 128K x 8 Bit 5 Volt, Byte Alterable E2PROM T Y P IC A L F E A T U R E S • High Density 1 Megabit 128K x 8 E2PROM Module • Access Tim e of 120 ns at -5 5 °C to +125°C • SIMPLE Byte and Page Write

Xicor 28C010

Abstract: 28C010-200 28C010-120 28C010-150 XM28C010-25 28C010-250 28C010H-120 28C010H-150 28C010H-200 28C010H-250
Contextual Info: - 152- 2 8 C O 1 O m & ít * m sm cc> X 4 A « TAAC max ns TCAC max (ns) TOH tax (ns) TOE max (ns) TOD max (ns) VDD (V) I DD/STANDBY (ibA) VIL max (V) 1 VIH min (V) & ii / m £ Ci tax (pF) V O L / I VOL max (V/mA) mæ V O H / I VOH min (V/mA) Co max (pF)

SFDB

Abstract: S14 MSOP zilog 3055 4K x 8 EEPROM Memory X24C00 X25320 p 32 lcc 300 r rom 1K x 8 S14 K 40 X84041
Contextual Info: DEB = Design Engineering Bulletin Visit Our Website for the Latest Information Product Selection Guide Density Bits Part Number VCC (Volts) Org. ICC (mA) 95DB = 1995 Data Book SFDB = Serial Flash Data Book WWW = www.xicor.com 97CD = 1997 CDROM www.xicor.com

X28C64B

Abstract: x2444 Application Note XICOR x2004 "BP MICROSYSTEMS" EP-1 allpro 88 x2444 FLEX-700 ALL-07 allpro clk-3100 adapters X2816A
Contextual Info: Application Note AN54 2 E PROM Programmer Vendors for Xicor Devices by Jordon Inkeles, July 1996 The following listing summarizes the most current information available to Xicor regarding external support of our products. Each manufacturer's listing has been condensed in order to provide a legible

EA 7023

Abstract: x9241w intel 8x196 X2816 8X196 80188 application note intel 80196 microcontroller pin diagram MCS196 V/EA+7023
Contextual Info: Desjgn Engineering Bulletin Xicnr N ew Product and Applications Information for Design Engineers H igh S p eed 6 4 K Bit E*PROM W ith Segm en ted W rite Lock O ut Block Lock allows partitioning o f the E2PROM A rray into Read Only and Read/W rite segments

INTERFACING MEMORY WITH 8051 THROUGH I2C PROTOCOL

Abstract: spi interfacing to 8051 8051 interfacing to EEProm 8051 interfacing with eeprom interfacing of 8051 with smartcard 8051 spi eeprom interfacing of 8051 with encoder 640 memory interfacing with 8051 using i2c motorola 68hc11 digital potentiometer using microcontroller 8051
Contextual Info: Welcome to Xicor! Click anywhere for Menu. Visit Our Website For The Latest Information www.xicor.com Data Book Nonvolatile Solutions Main Menu Supervisory Circuits Data Sheet Selection Guide Micro Port Savers MPS Data Sheet Selection Guide Serial EEPROMS

Contextual Info: « XM28C01 OP 1 Megabit Puma Module 32K x 32 Bit High Speed 5 Volt Byte Alterable Nonvolatile Memory Array FEATURES • High Reliability — Endurance: 100,000 Cycles — Data Retention: 100 Years • High Speed, High Density Memory Module — 150ns, 120ns, 90ns and 70ns Access Times

X2444P

Abstract: X2404P X2444PI X9103P X2864BP X9503P X2004D c7805 X20CZ16JI-35 X28256P
Contextual Info: Part Number 5962-3826701MXA 5962-3826701MXA C7200 5962-3826701MXA C7264 5962-3826701MZC 5962-3826701MZC C7200 5962-3826703MXA 5962-3826703MXA C7200 5962-3826703MZC 5962-3826703MZC C7200 5962-3826705MZC 5962-3826705MZC C7200 5962-3826705MZC C7623 5962-3826707MZC C7200

eeprom 2816

Abstract: 2816A eeprom Atmel eeprom Cross Reference eeprom Cross Reference EEPROM 2864 INTEL 28C64 EEPROM xicor 28C64 Xicor 28C010 Xicor 2864 intel 2864
Contextual Info: SEEQ TECHNOLOGY EEPROM CROSS REFERENCE Alternate Manufacturer Part # EEPROM Configuration SEEQ Part # AMD AMD AMD Atmel Atm el Atmel Atmel Atmel Atm el Atmel Atmel Atmel Atm el Atm el Atm el Atmel Atmel Cypress Cypress Cypress Exel Exel Exel Exel Intel Intel

Contextual Info: am 1 Megabit Puma Module XM28C01 OP 32K x 32 Bit High Speed 5 Volt Byte Alterable Nonvolatile Memory Array FEATURES • High Reliability — Endurance: 100,000 Cycles — Data Retention: 100 Years • High Speed, High Density Memory Module — 150ns, 120ns, 90ns and 70ns Access Times