XM28C010I Search Results

Contextual Info: XIC GR INC ^^41743 SBE ]> □ □ □ 3 7 h 2 D 41 « X I C Preliminary Information 1 Megabit Module XM28C010 128K X 8 Bit 5 Volt, Byte Alterable E2PROM TYPICAL FEATURES • High Density 1 Megabit 128K x 8 E2PROM Module • Access Time of 120 ns at -55°C to +125°C

Contextual Info: X Preliminary Information 1 Megabit Module XM 28C010 H S T 128K x 8 Bit 5 Volt, Byte Alterable E2PROM T Y P IC A L F E A T U R E S • High Density 1 Megabit 128K x 8 E2PROM Module • Access Tim e of 120 ns at -5 5 °C to +125°C • SIMPLE Byte and Page Write

X28C010

Abstract: X28C256 XM28C010 XM28C010I
Contextual Info: Prelim inary Inform ation 1 Megabit Module U XM28C010 r 1 28 K x 8 Bit 5 Volt, Byte Alterable E2PROM TYPICAL FEATURES • Fast Write Cycle Times Supported by: — Internal Program Cycle 10 ms Max. — 64-byte Page — DATA Polling — Toggle Status Bit • High Rel Module Available with:

Contextual Info: J PRELIMINARY INFORMATION IMegabit Module XM28C010 f i a r 128K x 8 Bit Electrically Erasable PROM FEATURES • High Density IMegabit 128K x 8 E2PR0M Module • Access Time of 250 ns at -55°C to + 125°C • Base Memory Component: Xicor CMOS X2UC256 • JEDEC Standard 32-Pin 600 Mil Wide

Xicor 28C010

Contextual Info: Preliminary Information 1 Megabit Module t XM28C010 a 128K x 8 Bit 5 Volt, Byte Alterable E2PROM T Y P IC A L F E A T U R E S • High Density 1 Megabit 128K x 8 E2PROM Module • Access Tim e of 120 ns at -5 5 °C to +125°C • SIMPLE Byte and Page Write