IGBT GT20D201 Search Results

IGBT GT20D201 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
GT50J123		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 59 A, TO-3P(N)	Datasheet
GT30J122A		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 30 A, TO-3P(N)	Datasheet
GT20J121		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 20 A, TO-220SIS	Datasheet
GT30J121		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 30 A, TO-3P(N)	Datasheet
GT20J341		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 20 A, Built-in Diodes, TO-220SIS	Datasheet

IGBT GT20D201 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
GT20D101 Contextual Info: SILICON N CHANNEL IGBT GT20D101 HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage 20 5 MAX : Vc£g=250V MIN. # 3.3 ±0.2 . High Forward Transfer Admittance : \| Yfe \| =10S (TYP.) . Complementary to GT20D201 . Enhancement-Mode *\ - 2.5	OCR Scan	GT20D101 GT20D201 100mA GT20D101	PDF
IGBT gt20d201 Abstract: p channel igbt GT20D201 Contextual Info: GT20D201 TO SH IBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL IGBT GT20D201 HIGH POWER AMPLIFIER APPLICATION Unit in mm 20.5M AX. • High Breakdown Voltage • High Forward Transfer Admittance : \|Yfe\| = 10S Typ. • Complementary to GT20D101	OCR Scan	GT20D201 --250V GT20D101 IGBT gt20d201 p channel igbt GT20D201	PDF
IGBT 200A 1200V Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40 Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D	OCR Scan	bup203 t0220) BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s IGBT 200A 1200V T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40	PDF
IGBT gt20d201 Contextual Info: SILICON N CHANNEL IGBT GT20D201 HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage VCES=-250V MIN. . High Forward Transfer Admittance I Yfe I =10S (TYP.) 20.5M A X ¿ 3 .3 ± 0 .2 . Complementary to GT20D101 . Enhancement-Mode 2.5 3.0 + 2.5	OCR Scan	GT20D201 GT20D101 -250V -250V, -100yA, -100mA IGBT gt20d201	PDF
Contextual Info: TO SH IBA GT20D101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 2 0 D 1 01 Unit in mm HIGH POWER AMPLIFIER APPLICATION • • • • High Breakdown Voltage : VCES~ 250V Min. High Forward Transfer Admittance : \|Yfe\|= 10S(Typ.) Complementary to GT20D201	OCR Scan	GT20D101 GT20D201	PDF
GT30J124 Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123 Contextual Info: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.	Original	BCE0010E BCE0010F GT30J124 GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123	PDF
GT30J124 Abstract: GT45F122 GT30F123 GT30F124 gt30f122 IGBT GT30F124 gt30g122 gt30g124 GT45G122 GT30F125 Contextual Info: 製品カタログ 2010-3 東芝半導体製品カタログディスクリート IGBT h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 1 特長と構造 IGBTは Insulated Gate Bipolar Transistor の頭文字です。 MOSFETと同様に高入力インピーダンス特性を持ち電圧で駆動できます。	Original	BCJ0010G BCJ0010F GT30J124 GT45F122 GT30F123 GT30F124 gt30f122 IGBT GT30F124 gt30g122 gt30g124 GT45G122 GT30F125	PDF
GT30F121 Abstract: GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101 Contextual Info: 2005-3 PRODUCT GUIDE Discrete IGBTs semiconductor http://www.semicon.toshiba.co.jp/eng Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive. ● The conductivity modulation characteristics of a bipolar transistor make it ideal for applications	Original	BCE0010A GT30F121 GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101	PDF
T0247AC Abstract: IRG4PC50FD T0-220AB bup314 T0-247AC bup314d IRG4BC40U T0220AB IRG4PC50UD BUP212 Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 electronics CunoBbie TpaH3MCTopbi IGBT copTMpoBKa no HanpflweHMro UCE TpaH3Mcrop IGBT (Insulated Gate Bipolar Transistor) npeflCTaBrmeT c o 6 om 6 M n o r m p H b iM T p a H 3 M C T o p c M3 o n M p o B a H H H M 3 a T B o p o M , y n p a B r m e M b iM H a n p a ^ e H M e M . O h x a p a K T e p M 3y e T c a b h c o k m m	OCR Scan	B03M0WH0CTb npe06pa30Baiennx paUP212 T0220AB BUP213 BUP313 T0218AB BUP313D T0247AC IRG4PC50FD T0-220AB bup314 T0-247AC bup314d IRG4BC40U T0220AB IRG4PC50UD BUP212	PDF
GT45F122 Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124 Contextual Info: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor	Original	BCE0010D S-167 BCE0010E GT45F122 gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124	PDF
GT30F124 Abstract: GT30J124 GT30F123 gt30g124 GT45F122 45F122 GT30F124 Equivalent 30g122 gt30g122 gt30f122 Contextual Info: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor	Original	BCE0010F GT30F124 GT30J124 GT30F123 gt30g124 GT45F122 45F122 GT30F124 Equivalent 30g122 gt30g122 gt30f122	PDF
GT30J322 Abstract: MP6750 MG200Q2YS40 MG100Q2YS42 MG75J2YS50 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X Contextual Info: [2] ⵾ຠ⚫੺ [ 2 ] ⵾ຠ⚫੺ 1. 600 V ࡕࠫࡘ࡯࡞ ٨ ٨ ٨ ٨ ᓸ⚦ൻᛛⴚࠍዉ౉ߒ‫ߣ࠼࡯ࡇࠬࠣࡦ࠴࠶ࠗࠬޔ‬㘻๺㔚࿶ߣߩ࠻࡟࡯࠼ࠝࡈߩᡷༀࠍታ⃻ߒ߹ߒߚ‫ޕ‬ VCE sat = 2.1 V (typ.) tf = 0.2 µs (typ.) 㜞ᾲવዉߩ⓸ൻࠕ࡞ࡒ᧚ߩ⛘✼ၮ᧼ߩ૶↪ߦࠃࠅᾲᛶ᛫ߩૐᷫࠍታ⃻ߒ‫ޔ‬㜞ା㗬ൻࠍ࿑ࠅ߹ߒߚ‫ޕ‬	Original	MG800J2YS50A) MG300J1US51 MG400J1US51 MG50J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG300J2YS50 MG100J7KS50 GT30J322 MP6750 MG200Q2YS40 MG100Q2YS42 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X	PDF
TOSHIBA IGBT Abstract: RCA 4136 Audio Power Amplifier MOSFET TOSHIBA SSM2131P Helitrim SSM2131 DIM-100 Mark Alexander A1701 GT20D101Y Contextual Info: AN-211 应用笔记 ONE TECHNOLOGY WAY • P.O. BOX 9106 • NORWOOD, MASSACHUSETTS 02062-9106 • 617/329-4700 Alexander电流反馈型音频功率放大器* 作者：Mark Alexander 本应用笔记由 Mark Alexander 撰写，他于 1981 年获得多伦多	Original	AN-211 68WR503 R13-R16, 230B1B205K) 6100B SSM-2131P OP-97FP TL431CP 2SC2682 2SC2238B TOSHIBA IGBT RCA 4136 Audio Power Amplifier MOSFET TOSHIBA SSM2131P Helitrim SSM2131 DIM-100 Mark Alexander A1701 GT20D101Y	PDF
Mark Alexander A Current Feedback Audio Power Amp Abstract: SSM2131 RCA 4136 2N5551 equivalent npn transistor RCA 467 hf wide band class AB power amplifier mosfet transistor 2n5551 transistor equivalent 2n5551 Audio Power Amplifier MOSFET TOSHIBA SSM2131P Contextual Info: U ANALOG DEVICES AN-211 APPLICATION NOTE ONE TECHNOLOGY WAY • P.O. BOX 9106 • NORWOOD, MASSACHUSETTS 02062-9106 • 617/3294700 The Alexander Current-Feedback Audio Power Amplifier* by Mark Alexander This application note was written by Mark Alexander,	OCR Scan	AN-211 2SC2682; 2SC2238B. 2SA1142; 2SA968B. Mark Alexander A Current Feedback Audio Power Amp SSM2131 RCA 4136 2N5551 equivalent npn transistor RCA 467 hf wide band class AB power amplifier mosfet transistor 2n5551 transistor equivalent 2n5551 Audio Power Amplifier MOSFET TOSHIBA SSM2131P	PDF

Mark Alexander A Current Feedback Audio Power Amp Abstract: npn transistor RCA 467 RCA 4136 Audio Power Amplifier MOSFET TOSHIBA SSM2131 cross reference DIM-100 Scans-0082255 SSM2131 Helitrim 2N5551 equivalent Contextual Info: AN-211 APPLICATION NOTE ANALOG ► DEVICES ONE TECHNOLOGY WAY • P.O. BOX 9106 • NORWOOD, MASSACHUSETTS 02062-9106 • 617/329-4700 The Alexander Current-Feedback Audio Power Amplifier* by Mark Alexander This application note was w ritten b y M ark Alexander,	OCR Scan	AN-211 2SC2682; 2SC2238B. 2SA1142; 2SA968B. Mark Alexander A Current Feedback Audio Power Amp npn transistor RCA 467 RCA 4136 Audio Power Amplifier MOSFET TOSHIBA SSM2131 cross reference DIM-100 Scans-0082255 SSM2131 Helitrim 2N5551 equivalent	PDF
2sk1529 Abstract: 2sk405 2sj115 2sc3281 YTFP450 mosfet 2sc3281 Transistors Bipolar NPN TO-3P 2sk405 YTFP150 Contextual Info: MOS FET TRANSISTORS POWER MOS FETS -rr MOS II YTFP MAXIMUM RATINGS Application Type No. (N-Channel) (A) YTFP150 DC-DC Converter YTFP151 Motor Drive YTFP152 YTFP153 YTFP252 YTFP253 Motor Drive	OCR Scan	YTFP150 YTFP151 YTFP152 YTFP153 YTFP250 YTFP251 YTFP252 YTFP253 YTFP450 YTFP451 2sk1529 2sk405 2sj115 2sc3281 mosfet 2sc3281 Transistors Bipolar NPN TO-3P 2sk405	PDF
15J102 Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346 Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811	OCR Scan	2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346	PDF