ID 1803 Search Results

1232l

Abstract: dallas 2502 SOIC150 CARSEM
Contextual Info: RELIABILITY MONITOR SAMPLING PLAN PRODUCT FAMILY TECHNOLOGY ASSEMBLY/ALT PACKAGE 1991 AUTO. ID. Battery Dallas Touch Can 2401 AUTO. ID. 0.6 Ox Ni Carsem 03 TO92 2502 AUTO. ID. 0.6 Ox Ni EPROM Carsem 06 TSOC 2502 AUTO. ID. 0.6 Ox OxyNi EPROM Carsem 08 SOIC150

CARSEM

Abstract: SOIC-36 2118M 1232L 80CH11
Contextual Info: RELIABILITY MONITOR SAMPLING PLAN PRODUCT 2401 2502 2502 1992 1233 1232L 1000 1803 1267 80C320 87C520 5002 80CH11 3801 3816C 1230 1775 2154 21352 21Q43A 2175 21S07A 2108 2118M 1620 1302 12887 1643 1646 1644 9034 FAMILY TECHNOLOGY AUTO. ID. 0.6 Ox Ni AUTO. ID.

Contextual Info: REV ORDER INFORMATION A APP. ECN NO. DATE NEW DESIGN 1803 04 XX 4 X T _ Plating: 2: Selective Gold 4: Selective Gold Glod 30u" No.of contact 15.55 0.2 Type 180* ID CM ID 00:White 01 :Black 02:0ff—White CO 12.04 (COMPONENT SIDE) PCB LAYOUT NO. 1 2 3 4 NAM E

BCM 4709

Abstract: Ericsson 2116 IC 4822 automaten
Contextual Info: ID Nr. ServiceProvider 0004 - card administration SystemIntegrator Location Rosan Finance Sectors Launching Date Application sector 13 and 14 2 01.05.2002 sector 15 1 01.05.2002 1 01.05.2002 card holders Rosan Finance personal data Card ID: ISO No., Rosan Finance

mdd9754

Abstract: N-P Channel mosfet MDD-9754
Contextual Info: MDD9754 Product Flyer MagnaChip Imaging Solutions Division Dual Enhancement N-P Channel Trench MOSFET Key Features N-Channel ƒ VDS = 40V ƒ ID=16A VGS=10V ƒ RDS(ON) <27mΩ @ VGS = 10V <35mΩ @ VGS = 4.5V p-channel ƒ VDS = -40V ƒ ID=-12.7A(VGS=10V) ƒ RDS(ON)

Contextual Info: SKS 1270F B6C 860 V16 Characteristics Symbol Conditions min. typ. max. Unit 1270 A 1001 1502 A 901 1803 A 1600 V Electrical Data Id Tamb = 35°C no overload 150 % overload, 60s every 10 min. 200 % overload, 60s every 10 min. VCES SEMISTACK Thyristor Three-phase controlled

Contextual Info: SKS 1270F B6C 860 V16 Characteristics Symbol Conditions min. typ. max. Unit 1270 A 1001 1502 A 901 1803 A 1600 V Electrical Data Id Tamb = 35°C no overload 150 % overload, 60s every 10 min. 200 % overload, 60s every 10 min. VCES SEMISTACK Thyristor Three-phase controlled

2SA1803

Abstract: 2SC4688
Contextual Info: TO SH IB A 2SC4688 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC4688 PO W ER AM PLIFIER APPLICATIONS U n it in mm . 15.8 + 0.5 i C om plem entary to 2SA 1803 • Recom m end for 40W H igh F id elity Audio Frequency A m plifier ?S3.6±0.2 - k : -

MDD1754

Abstract: MDD1754RH MagnaChip Semiconductor Ltd. MDD1754 4000P mosfet low vgs
Contextual Info: N-Channel Trench MOSFET, 40V, 20.5A, 27mΩ General Description Features The MDD1754 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability. VDS = 40V ID=20.5A VGS=10V

MDS3754

Abstract: MDS3754RH P-Channel mosfet 40V P-channel Trench MOSFET
Contextual Info: P-Channel Trench MOSFET, -40V, -6.0A, 45mΩ General Description Features The MDS3754 uses advanced Magnachip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability. VDS = -40V ID = -6.0 @ VGS = -10V

MDD1754

Abstract: mosfet low vgs MagnaChip Semiconductor Ltd. MDD1754
Contextual Info: N-Channel Trench MOSFET, 40V, 20.5A, 27mΩ General Description Features The MDD1754 uses advanced Magnachip’s Trench MOSFET Technology to provided high performance in on-state resistance, switching performance and reliability. VDS = 40V ID=20.5A VGS=10V

MDS1754

Abstract: mosfet low vgs
Contextual Info: N-Channel Trench MOSFET, 40V, 7.6A, 29mΩ General Description Features The MDS1754 uses advanced Magnachip’s Trench MOSFET Technology to provided high performance in on-state resistance, switching performance and reliability. VDS = 40V ID=7.6A VGS=10V

MDS1651

Contextual Info: Single N-Channel Trench MOSFET 30V, 11.6A, 17mΩ General Description Features The MDS1651 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent reliability. VDS = 30V ID = 11.6A@VGS = 10V

40V 14A DPAK

Abstract: 40V 60A MOSFET MDD1751 TO-252 N-channel MOSFET
Contextual Info: 40V N-channel Trench MOSFET : 40V, 60A, 7.5mΩ General Description Features The MDD1751 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability VDS = 40V ID = 60A @VGS = 10V

mosfet 100A

Abstract: 40V, 50A n mosfet
Contextual Info: N-Channel Trench MOSFET 40V, 50A, 8.0mΩ General Description Features The MDI1752 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability VDS = 40V ID = 50A @VGS = 10V RDS ON

MDS9651

Abstract: Power MOSFET SO-8 Complementary N-P channel MDS965 PF3506 601ID 1S1020 82269
Contextual Info: Complementary N-P Channel Trench MOSFET General Description Features The MDS9651 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability N-Channel • VDS = 30V ■ ID=7.2A ■ RDS ON

MDS9754

Abstract: 8v15
Contextual Info: Dual Enhancement N-P Channel Trench MOSFET General Description Features N-Channel VDS = 40V ID = 6.1A @ VGS = 10V RDS ON <29mΩ @ VGS = 10V <37mΩ @ VGS = 4.5V The MDS9754 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in

MDD1653

Abstract: MDD*1653 mdd1653 MOSFET MDD1653rh MDD1653RP MagnaChip Semiconductor Ltd. MDD1653 MagnaChip Semiconductor Ltd. MDD1653 rg 1E52 MDD165 MDD1653R
Contextual Info: Single N-channel Trench MOSFET 30V, 50A, 8.5mΩ General Description Features VDS = 30V ID = 50A @VGS = 10V RDS ON < 8.5mΩ @VGS = 10V < 14.0mΩ @VGS = 4.5V The MDD1653 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state

MDI1752

Abstract: 40V50A 40V, 50A n mosfet 82269
Contextual Info: N-Channel Trench MOSFET 40V, 50A, 8.0mΩ General Description Features The MDI1752 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 50A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V performance in on-state

MMBD2103

Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
Contextual Info: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.

SMD Codes

Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
Contextual Info: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.

0342F

Abstract: 82269 MagnaChip Semiconductor
Contextual Info: N-Channel Trench MOSFET 30V, 7.2A, 28mΩ General Description Features The MDS1656 uses advanced Magnachip’s trench MOSFET VDS = 30V ID = 7.2A @VGS = 10V RDS ON < 28mΩ @VGS = 10V < 42mΩ @VGS = 4.5V Technology to provide high performance in on-state

MDF1752

Abstract: 220F
Contextual Info: N-Channel Trench MOSFET 40V, 50A, 8.0mΩ General Description Features The MDF1752 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 50A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V performance in on-state

MDD1751

Abstract: 60V 60A TO-252 N-CHANNEL 40V 60A MOSFET
Contextual Info: 40V N-channel Trench MOSFET : 40V, 60A, 7.5mΩ General Description Features The MDD1751 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 60A @VGS = 10V RDS ON < 7.5mΩ @ VGS = 10V < 9.5mΩ @ VGS = 4.5V performance in