ICES Search Results

30n60b

Abstract: 30N60 30N60C ic 931
Contextual Info: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous

2SC1815GR

Abstract: 2SC1815BL 2N3693 2SC1815-GR 2SC1815-BL 2N5209 2N5210 2N5232 2N5232A 2SC1815
Contextual Info: TO-92 PLASTIC PACKAGE TRANSISTORS NPN Typ* No. 2N5209 VC80 VCE0 VEBO (V) Mn (V) Min (V) Min 50 50 5 'cso (UA) Max 0.050 VC8 (V) hFE Min 35 50 50 5 0.050 35 9 Max Cob 'c & VCE VCE(SH| ®^BE (Sal) ® •c Ices 0 vce (mA) (uA) (V) (mA) (V) (V) (V) (Pf) Min Max

SEKI ST 22

Abstract: broadcast fm radio tuner FM multiplex Stereo Demodulator 029H MSM9552 MSM9553
Contextual Info: Oki Semiconductor MSM9552/3 FM Multiplex Demodulator for FMSS D ES C R IP TIO N T h e 5 -V M S M 9552 and 3 -V M S M 9553 are d ig ital in fo rm atio n d em o d u lato rs for w ireless rad ios an d in fo r­ m atio n p ro ce ssin g d ev ices. T h ese d ev ices are su itable fo r D A ta R ad io C h an n el D A R C , Freq u en cy -M o d ­

Contextual Info: Introduction J u n e 1996, ver. 4 P ro g ra m m a b le logic d ev ic e s PLD s a re d ig ita l, u se r-c o n fig u ra b le in te g ra te d circ u its (ICs) u se d to im p le m e n t c u sto m logic fu n ctio n s. PL D s can im p le m e n t a n y B oolean e x p re ssio n o r re g iste re d fu n c tio n w ith b u iltin logic stru c tu re s. In c o n trast, o ff-th e-sh elf logic ICs, su ch a s TTL d ev ices,

2N5551 CJ

Contextual Info: This I tr Material Ln a b-1 t-1 U a NPN General Purpose Amplifiers and Switches Device No. Case Style ^C B O V CEO Copyrighted V Min (V) Min (V) Min 75 45 6 CD jr PN100 CD TO-92 (92) vEBO (continued) ICES* *CBO (nA) Max 50 V @ CB hFE (V) Min 60 80 100 100

Contextual Info: Small Signal Transistors TO-18 Case Continued TYPE NO. DESCRIPTION (V) (V) (V) (l*A) MIN MIN MIN MAX *ICES "IC E V @ lc hFE BVCBO BVCEO b v e b o ICBO @ VCBO (mA) (V) MIN e VCE VCE(SAT) @ 1C Cob (V) MAX (V) (mA) MAX (pF) fT NF ton (MHZ) (dB) (ns) MAX MIN

jc5010

Contextual Info: 4684955 I T T S E MI CONDUCT ORS 87D 02324 D y . Q_j deJ 4^04^55 □□02324 □ § NPN AND PNP TRANSISTORS NPN Silicon Transistors with Center Collector Plastic Package TO-92 D Type Pin Config. VcEO VcEsat h FE fx Ices at at at V ce/ I c Ic / I b V ce C0b

Contextual Info: LF2249 12 x 12-bit D igital M ixer FEATURES_ □ 40 M H z D ata a n d C o m p u ta tio n R ate □ T w o 12 x 12-bit M u ltip lie rs w ith In d iv id u a l D a ta I n p u ts □ S e p a ra te 16-bit I n p u t P o rt for C a sc a d in g D ev ices

IRG4CC81KB

Abstract: 300C
Contextual Info: PD- 91875 IRG4CC81KB IRG4CC81KB IGBT Die in Wafer Form C 600 V Size 8.1 Ultra-Fast Speed Short Circuit Rated G 6" Wafer E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage

igbt 20A 1200v

Abstract: IRGCH20SE IRGPH20S
Contextual Info: PD-9.1440 TARGET IRGCH20SE IRGCH20SE IGBT Die in Wafer Form C 1200 V Size 2 Standard Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage

IRGBC30F

Abstract: IRGCC30FE
Contextual Info: PD-9.1430 TARGET IRGCC30FE IRGCC30FE IGBT Die in Wafer Form C 600 V Size 3 Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage

c 5705

Abstract: 300C IRG4CC88KB
Contextual Info: PD- 91869 IRG4CC88KB IRG4CC88KB IGBT Die in Wafer Form C 600 V Size 8.8 Ultra-Fast Speed Short Circuit Rated G 6" Wafer E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage

300C

Abstract: IRG4CC77KB 443x
Contextual Info: PD- 91867 IRG4CC77KB IRG4CC77KB IGBT Die in Wafer Form C 600 V Size 7.7 Ultra-Fast Speed Short Circuit Rated G 6" Wafer E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage

IRG4CC10KB

Abstract: 300C IRG4BC10K
Contextual Info: PD- 91825 IRG4CC10KB IRG4CC10KB IGBT Die in Wafer Form C 600 V Size 1 Ultra-Fast Speed Short Circuit Rated G 6" Wafer E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage

300C

Abstract: IRG4CC40SB IRG4PC40S
Contextual Info: PD- 91823 IRG4CC40SB IRG4CC40SB IGBT Die in Wafer Form C 600 V Size 4 Standard Speed 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage

IRG4CH50UB

Abstract: IRG4PH50U ir igbt 1200V 10A
Contextual Info: PD- 91775 IRG4CH50UB IRG4CH50UB IGBT Die in Wafer Form C 1200 V Size 5 Ultra-Fast Speed 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V (BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage

IRG4BC10U

Abstract: 300C IRG4CC10UB
Contextual Info: PD- 91826 IRG4CC10UB IRG4CC10UB IGBT Die in Wafer Form C 600 V Size 1 Ultra-Fast Speed 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage

IRG4PC50W EQUIVALENT

Abstract: *g4pc50w IRG4PC50W 91836 1kA IGBT for IR IGBT die 300C IRG4CC50WB
Contextual Info: PD- 91836 IRG4CC50WB IRG4CC50WB IGBT Die in Wafer Form C 600 V Size 5 WARP Speed G 6" Wafer E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage

7401AN

Abstract: FJH311 FJH311A pin diagram for all 74 series ttl gates transistor KJJ
Contextual Info: T.T.L. Q U A D R U P L E 2 -IN P U T P O S IT IV E N A N D G A T E S F IH 3 M F J H 3 IIA Corresponds to 74 Series type 7401AN PR O V IS IO N A L D A T A T hese dev ices a r e t r a n s is to r - tr a n s is to r logic quadruple 2-input p o sitiv e NAND g a te s ,

2N4033

Abstract: 2N4358 2N4890 2N4032 2N4036 2N4037 2N4046 2N4047 2N4234 2N4235
Contextual Info: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO (V) VCEO (V) VEBO (V) *VCER ICBO ( A) @ VCB hFE (V) @ IC @ VCE VCE(SAT) @ IC fT (mA) (V) (V) (mA) (MHz) Cob (pF) ton (ns) *TYP *TYP *TYP *TYP *TYP MAX MAX *ICEO *ICES *ICEV *ICER

2N5189

Abstract: 2N4930 2N4931 2N4943 2N4960 2N5022 2N5023 2N5058 2N5059 2N5109
Contextual Info: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO (V) VCEO (V) VEBO (V) *VCER ICBO ( A) @ VCB hFE (V) @ IC @ VCE VCE(SAT) @ IC fT (mA) (V) (V) (mA) (MHz) Cob (pF) ton (ns) toff (ns) (dB) *TYP *TYP *TYP *TYP *TYP MAX *ICEO *ICES *ICEV

2N5963

Abstract: 2N5812 2N5813 2N5816 2N5817 2N5818 2N5819 2N5822 2N5823 2N5830
Contextual Info: Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. DESCRIPTION LEAD VCBO VCEO CODE (V) (V) *VCES VEBO ICBO @ VCB (nA) (V) *ICES (V) *ICEV hFE *hFE (1kHZ) TO-92-18R @ VCE @ IC VCE (SAT) @ IC Cob (V) (mA) (V) (mA) fT NF toff (pF) (MHz) (dB) *Crb *TYP

7402N

Abstract: 2 input nor gate 24v FJH221 nor gate 24v 7402N Nor 7402N TTL FJH221A
Contextual Info: T.T.L. Q U A D RU PLE 2-INPUT POSITIVE NOR G ATES FIH 22I FJH 22IA Corresponds to 74 Series type 7402N T E N T A T IV E D A T A T hese dev ices a re tr a n s is to r - tr a n s is to r logic quadruple 2-input p o sitiv e NOR gates in the F J s e r ie s of in te g rate d c ir c u its . The FJH221 c o rre sp o n d s to '74 S e rie s ' type

switch NPN

Abstract: BSY18 2N2369 2n4390
Contextual Info: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV