IC SRAM 8K X 8 Search Results

LT 543 IC pin diagram

Abstract: IC SRAM 8K X 8 microprocessor 80386 pin out diagram
Contextual Info: M IC R O N 1 MT56C0818 8K x 18, DUAL 4K x 18 CACHE DATA SRAM T CACHE DATA SRAM SINGLE 8K x18 SRAM, DUAL4 K x 18 SRAM CONFIGURABLE CACHE DATA SRAM FEATURES • Operates as two 4K x 18 SRAMs with common addresses and data; also configurable as a single 8K x 18 SRAM

Contextual Info: MT56C3818 8K x 18, DUAL 4K x 18 CACHE DATA SRAM M IC R O N CACHE DATA SRAM SINGLE 8Kx18 SRAM, DUAL 4KX18SRAM CONFIGURABLE CACHE DATA SRAM FEATURES • Operates as two 4K x 18 SRAMs with common addresses and data; also configurable as a single 8K x 18 SRAM

74LS373 PIN CONFIGURATION AND SPECIFICATIONS

Abstract: intel 80386
Contextual Info: MT56C3816 8K x 16, DUAL 4K x 16 CACHE DATA SRAM M IC R O N SINGLE 8Kx 16 SRAM, DUAL 4Kx16 SRAM CACHE DATA SRAM CONFIGURABLE CACHE DATA SRAM FEATURES • Operates as two 4K x 16 SRAMs with common addresses and data; also configurable as a single 8K x 16 SRAM

a12w

Abstract: 74LS373 PIN CONFIGURATION AND SPECIFICATIONS
Contextual Info: M IC R O N MT56C0818 DUAL 4 K x 1 8 SRAM, SINGLE 8K x 18 SRAM CACHE DATA SRAM CONFIGURABLE CACHE DATA SRAM FEATURES • Operates as two 4K x 18 SRAM s with common ad dresses and data; also configurable as a single 8K x 18 SRAM • Built-in input ad dress latches

i1991

Abstract: intel 80386 pin diagram
Contextual Info: PRELIMINARY |U |IC R O N M T 56C 3816 C A C H E D ATA QPAM 4K x 16 s r a m , SINGLE 8K x 16 SRAM O riM IV I CONFIGURABLE CACHE DATA SRAM dual FEATURES • Operates as two 4K x 16 SRAMs with common addresses and data; also configurable as a single 8K x 16 SRAM

Contextual Info: MICRON TECHNOLOGY INC SSE ]> • b l l l S M T GQQSb4S Ö7Ü « f l R N MT5C6408 883C 8K X 8 SRAM I^ IC R Ü N . *—T"- Li i_-7 1 _1 " MILITARY SRAM 8K X 8 SRAM • • • • PIN ASSIGNMENT Top View) SMD 5962-38294, Class M JAN 5962-38294, Class B

Contextual Info: niCRON TECHNOLOGY INC 5SE D blllSMT 0 0 0 3 4 l4fl “133 I^ IC R O N 8K urn M T5C 6408 X 8 S R AM •4 > -Z V I2 _ SRAM 8K X 8 SRAM • High speed: 8*, 10,12,15,20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply

pin diagram of IC 74LS373

Contextual Info: M IC R O N MT56C0816 CACHE DATA SRAM DUAL 4Kx16 SRAM, SINGLE 8Kx16 SRAM CONFIGURABLE CACHE DATA SR A M FEATURES • O perates as two 4K x 16 SRAM s with common ad dresses and data; also configurable as a single 8K x 16 SRAM • Built-in input ad dress latches

48S74

Contextual Info: rz7 SGS-THOMSON ^ 7 M IL iC T i® « S If M K 48S74 VERY FAST CMOS 8K x 8 CACHE TAGRAM • 8K x 8 CMOS SRAM WITH ONBOARD COMPARATOR ■ ADDRESS TO COMPARE ACCESS TIME: 20, 25, 35ns - FAST CHIP SELECT COMPARE ACCESS 10ns ■ MATCH OUTPUT WITH FAST TAG DATA TO

Contextual Info: H IG H SPEED 8K X 16 C M O S S R AM P G A M O D U L E PRELIMINARY DESCRIPTION: The DPS8X16A is a 40-pin Pin G rid Array PGA consisting o f tw o 8K X 8 SRAM devices in ceram ic LCC packages surface m o u n te d on a co-fired ceram ic substrate w ith m atched thermal coefficients.

Contextual Info: □PM DPS832V Dense-Pac Microsystems, I n a , CMOS SRAM VERSAPAC MODULE DESCRIPTION: The DPS832V is a 66-pin Pin Grid Array PGA consisting of four 8K X 8 SRAM devices in ceramic LC C packages surface mounted on a co-fired ceram ic substrate with m atching thermal

Contextual Info: ADVANCE M I IC n D N 25 6 K x 1 8 / 1 2 8K x 36 LVTTL, F L O W - T H R O U G H LATE WRITE SRAM MT59L256L18F MT59L128L36F 4.5Mb LATE WRITE SRAM Dual Clock and Single Clock FEATURES * * * * * * * * * * * * * * * * * Fast cycle tim es 5ns, 6ns and 7ns 256K x 18 or 128K x 36 configurations

80486 microprocessor pin out diagram

Contextual Info: M IC R O N I l l 1“ 1 M T 56C 3818 8 K x 18, D U A L 4K x 18 C A C H E D A T A S R AM C A C H E DATA single c D U A L 4 K x 18 SRAM d a m O r lM IV I 8K x 18 sram , CONFIGURABLE CACHE DATA SRAM FEATURES PIN ASSIGNMENT Top View • Operates as two 4K x 18 SRAMs with common

Contextual Info: DPS832V Dense-Pac Microsystems, Inc. ^ CMOS SRAM VERSAPAC MODULE DESCRIPTION: The DPS832V is a 66-pin Pin Grid Array PGA consisting of four 8K X 8 SRAM devices in ceramic LCC packages surface mounted on a co-fired c e ra m ic su b stra te w ith m a tc h in g th erm al

OFW 361

Abstract: ofw 361 d ofw 361 s
Contextual Info: /T 7 *7 # S C S -T H O M S O N lls m iC T M O t g i M 48Z58 CMOS 8K x 8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION

Contextual Info: DALLAS s e m ic o n d u c to r DS1243Y 64K NV SRAM with Phantom Clock PIN ASSIGNMENT FEATURES • Real time clock keeps track of hundredths of seconds, seconds, minutes, hours, days, date of the month, months, and years 28 • Vcc 27 jj 26 j • 8K x 8 NV SRAM directly replaces volatile static RAM

8k*8sram

Contextual Info: Electronic Designs Inc. EDH88H08C-55/70/10 MILITARY BP* & •-*>* • 8K x 8 SRAM CMOS T h e EDH88H08C 8K x 8 is p a rt o f a new fa m ily o f H igh Speed S tatic RAM devices developed b y E lectronic Designs Inc. T h e EDH88H08C uses the advanced EDI M EM OR YPAC K packaging conce p t w h ic h m o un ts several LCC

Contextual Info: T em ic HM 65764 MATRA MHS 8K x 8 High Speed CMOS SRAM Description The HM 65764 is a high speed CMOS static RAM organized as 8192x8 bits. It is manufactured using MHS high performance CMOS technology. Access times as fast as 15 ns are available with maximum

Contextual Info: ^ Dense-Pac Microsystems, I n c ^ ^ ^ DPS8X16A H |C H s p EEp ^ x 16 C M O S SR A M P G A M O D U L E PRELIMINARY DESCRIPTION: The DPS8X16A is a 40-pin Pin Grid Array P G A consisting of two 8K X 8 SRAM devices in ceram ic LC C packages surface mounted on a co-fired ceram ic

Contextual Info: T e m ic MATRA MHS_HM 65764 8K x 8 High Speed CMOS SRAM Description The HM 65764 is a high speed CMOS static RAM organized as 8192x8 bits. It is manufactured using MHS high performance CMOS technology. Access times as fast as 15 ns are available with maximum

Contextual Info: PRELIMINARY M I IC R O N M T4 L S 1 2 8 3 2R 12 8K X 3 2 SR A M M O D U L E 128Kx 32 SRAM SRAM MODULE LOW VOLTAGE FEATURES • High speed: 15,20 and 25ns • High-density 512KB design • High-performance, low-power, CMOS double-metal process • Single +3.3V ±0.3V power supply

t19l

Abstract: mt5C6408
Contextual Info: [M IC R O N MT5C6408 SRAM 8K X 8 SRAM • High speed: 8 ,1 0 ,1 2 , 15, 20, 25 and 35ns • H igh-perform ance, low -pow er, CM O S double-m etal process • Single +5V ±10% pow er supply • Easy m em ory expansion w ith CE1, CE2 and OE options • All inputs and outputs are TTL com patible

Contextual Info: DS12250/E DALLAS DS1225D/E 64K Nonvolatile SRAM s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • Data retention in the absence of Vcc • Data is automatically protected during power loss • Directly replaces 8K EEPROM x 8 volatile static RAM or • Low-power CMOS

1117hm

Abstract: SMD-5962-38294
Contextual Info: T em ic HM 65764 S emi co nd uc t or s 8K X 8 High Speed CMOS SRAM Short description. Please refer to the full datasheet available on TEMIC web for detailed technical information. Description The HM 65764 is a high speed CMOS static RAM organized as 8192x8 bits. It is manufactured using