IC 7014 Search Results

MARKING W2 SOT23 TRANSISTOR

Abstract: ta 8268 sot-23 transistor p2 marking MARKING W3 SOT23 TRANSISTOR sot23 Transistor marking p2 3543 amplifier 2SC2712LT1 2SC2712L MARKING d4 npn sot23 sot-23 Marking LG
Contextual Info: 2SC2712LT1 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. * High Voltage and High Current: Vceo=50V,Ic=150mA Max. Package:SOT-23 * Excellent hFE Linearity: hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.)

Contextual Info: KTA1266 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS ltd , TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION FEATURES *ExceUent Hfe Linearity :Hfe 2 =80(Typ) at Vce=-6V, Ic=-150mA. :HFE(Ic=0.1mA)/Hfe(Ic=2mA>0.95(Typ).

Contextual Info: P a KTA1266L SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA POT EPITAXIAL SILICON TRANSISTOR LOW NOISE AMPLIFIER APPLICATION FEATURES .Excellent Hfe Linearity :Hfe 2 =80(Typ) atVce=-6V, Ic=-150mA. :HFE(Ic=0.1mA)/Hfe(Ic=2mA)=0.95(Typ).

Contextual Info: FORWARD INTERNATIONAL ELECTRONICS L ID . KTC3198L SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE AMPLIFIER APPLICATION Package: TO-92 FEATURES * Excellent Hfe Linearity :Hfe 2 =100(Typ) atVce=6V, Ic= 150mA. :HFE(Ic=0.1mA)/Hfe(Ic=2mAH). 95(Typ).

KTA1266

Abstract: KTA1266 transistor KTA1266 GR KTC3198 KTA1266. transistor
Contextual Info: K EC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1266 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent Ii f e Linearity : hFE 2 =80(Typ.) at VCE=-6V, Ic=-150mA : hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.).

transistor toshiba marking hf

Abstract: 2SA1162 2SC2712
Contextual Info: 2SC2712 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2712 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • High Voltage and High Current : V0EO-5OV, Ic = 150mA (Max.) Excellent hjpg Linearity : hFE (Ic = 0.1mA) / hFE (Ic = 2mA) = 0.95 (Typ.)

2SC5343 equivalent

Abstract: 2SC5343 equivalent for 2SC5343 transistor 2sc5343
Contextual Info: 2SC5343 NPN Transistor Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 3.5 ±0.2 4.55±0.2 * Excellent hFE Linearity : hFE 2 =100(Typ) at VCE=6V,IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ)

KTC3198

Abstract: KTA1266
Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC3198 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent I if e Linearity : hFE 2 =100(Typ.) a t V Ce =6V, Ic=150mA. • hFE(Ic-0.1mA)/liFE(Ic-2mA)=0.95(Typ.)

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTA1266L EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • Excellent Iif e Linearity : hFE 2 =80(Typ.) at V Ce = -6V, Ic=-150m A • hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.). • Low Noise : NF=0.2dB(Typ.). f=(lkHz).

KTA1266L

Abstract: KTC3198L
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC3198L EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • Excellent Linearity of Iif e : hFE 2 =100(Typ.) at V Ce =6V, Ic=150mA : hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.). • Low Noise : NF=0.2dB(Typ.) at (f=lkHz).

2SC5343

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC5343 TO-92 TRANSISTOR NPN 1. EMITTER FEATURES z Excellent hFE Linearity : hFE(2)=100(Typ) at VCE=6V,IC=150mA : hFE(IC=0.1mA)/ hFE(IC=2mA)=0.95(Typ). z Low Noise: NF=10dB(Typ). At f=1KHZ.

5343 transistor

Abstract: transistor 2sc5343 2SC5343 equivalent 2sc5343 2SA1980S TRANSISTOR K 135 J 50 transistor 5343
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SC5343 Pb Excellent hFE linearity Lead-free :hFE 2 =100(Typ) at VCE=6V,IC=150Ma :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ). z Low noise:NF=1Db(Typ).at f=1KHz. z Complementary pair with 2SA1980S.

KTA1266L

Abstract: KTC3198L KTA1266L transistor
Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1266L EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • Excellent Iife Linearity : hFE 2 =80(Typ.) a t V ce= -6V , Ic=-150mA : hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.). • Low Noise : NF=0.2dB(Typ.). f=(lkHz).

Contextual Info: 2SC5343 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE Linearity : hFE(2)=100(Typ) at VCE=6V,IC=150mA : hFE(IC=0.1mA)/ hFE(IC=2mA)=0.95(Typ). Low Noise: NF=10dB(Typ). At f=1KHZ. MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2sc5343

Abstract: Transistor 10A 60v
Contextual Info: 2SC5343 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Excellent hFE Linearity : hFE(2)=100(Typ) at VCE=6V,IC=150mA : hFE(IC=0.1mA)/ hFE(IC=2mA)=0.95(Typ). Low Noise: NF=1dB(Typ). At f=1KHZ. — MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTA1266 e p it a x ia l p la n a r pnp t r a n s i s t o r GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent hFF Linearity : hFF 2 =80(Typ.) at VCe=-6V, Ic=-150mA • hFE(Ic-0.1mA)/hFE(Ic-2mA)=0.95(Typ.).

2SD843

Abstract: 2SB753
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB753 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -4A ·High Collector Power Dissipation ·Complement to Type 2SD843

Inverter high voltage power transistor

Abstract: 2SB825 2SD1061
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB825 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -0.4V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1061

2SB1018A

Abstract: 2SD1411A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1018A DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.5V(Max)@IC= -4A ·High Current Capability- IC= -7A ·Complement to Type 2SD1411A APPLICATIONS ·High current switching applications.

2SB827

Abstract: 2SD1063
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB827 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -0.4V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1063

2SB828

Abstract: 2SD1064
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB828 DESCRIPTION •High Collector Current: IC= -12A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -6A ·Wide Area of Safe Operation ·Complement to Type 2SD1064

2SB826

Abstract: 2SD1062
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB826 DESCRIPTION •High Collector Current: IC= -12A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -6A ·Wide Area of Safe Operation ·Complement to Type 2SD1062

2SD844

Abstract: 2SB754 2SB754 equivalent
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB754 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -50V(Min) ·High Collector Current: IC= -7A ·Low Collector Saturation Voltage: VCE(sat)= -0.4V(Max) @IC= -4A

2SB829

Abstract: 2SD1065
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB829 DESCRIPTION •High Collector Current: IC= -15A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -8A ·Wide Area of Safe Operation ·Complement to Type 2SD1065