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    I9 TRANSISTOR Search Results

    I9 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-2
    Rochester Electronics LLC Avionics LDMOS transistor PDF Buy
    RX1214B300YI
    Rochester Electronics LLC RX1214B300Y - Microwave Power Transistor PDF Buy
    CA3127MZ
    Rochester Electronics LLC CA3127 - Transistor Array PDF Buy
    RX1214B130YI
    Rochester Electronics LLC NPN microwave power transistor PDF Buy
    MX0912B251Y
    Rochester Electronics LLC NPN microwave power transistor PDF Buy

    I9 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BA10324A

    Abstract: ba10324af BA10324AFV ba1032
    Contextual Info: Quad ground sense operational amplifiers BA10324A BA10324AF BA10324AFV BA10324A, BA10324AF, and BA10324AFV are monolithic ICs incorporating four phase-compensated operational amplifiers. Dimensions U n its : mm BA10324A (DIP14) I9 .4 ± 0 .3 Features •


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    BA10324A BA10324AF BA10324AFV BA10324A, BA10324AF, BA10324AFV DIP14, SSOP-B14 BA10324A DIP14) ba1032 PDF

    NDP405B

    Abstract: NDP405A NDP406A
    Contextual Info: a t i o n a Semiconductor l o c to b e r i9 9 i NDP405A/NDP405B, NDP406A/NDP406B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's proprietary, high


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    NDP405A/NDP405B, NDP406A/NDP406B NDP405B NDP405A NDP406A PDF

    9926C

    Abstract: IPI037N06L3 s4si IPP037N06L3 G
    Contextual Info: IPB034N06L3 G Jf]R IPI037N06L3 G IPP037N06L3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R  - @? > 2 I - ' R AE:> :K65 E649? @= @8J 7@C    4@? G6CE6CD I9   . K +&, Z" 1(


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    IPB034N06L3 IPI037N06L3 IPP037N06L3 76BF6? 766substances. 9926C s4si IPP037N06L3 G PDF

    b12 7d diode

    Contextual Info: IPB034N06N3 G Id\Q "%&$!"# 3 Power-Transistor Product Summary Features P 6? ABH>3 A53 C96931C9? > =? C? A 4A9E5B1>4 43 43 , & , P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  V 9H .( J R 9H"[Z#$YMc +&, Y" I9 )( 6 P. 5AH <? F ? > A5B9BC1>3 5 R 9H"[Z#


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    IPB034N06N3 b12 7d diode PDF

    motorola 100 w amplifier

    Abstract: PA9OO-I9-1OOUD
    Contextual Info: Order this data sheet MOTOROLA by PA9OO-I9-1OOUD SEMICONDUCTOR TECHNICAL DATA I Advance information PA900-I 9-1 OOL The RF Line Linear Power Amplifier Designed for cellular radio base stations in the 850 to 900 MHz frequency range. This microstrip circuit technology


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    PA900-I PA900-19-I motorola 100 w amplifier PA9OO-I9-1OOUD PDF

    IPB029N06N3G

    Contextual Info: IPB029N06N3 G Ie\Q IPI032N06N3 G IPP032N06N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 R  , ? >=1H , & Q @D9=9J54 D53 8>? <? 7I 6? B    3 ? >F5BD5BC I9   .( J *&1 Y" *(


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    IPB029N06N3 IPI032N06N3 IPP032N06N3 IPB029N06N3G PDF

    Philips MAB8021

    Abstract: MAB8021 8048 microcontroller processor 8048 TI 8048 CPU 8048 BASED 8048 pin details signetics N28 block diagram of 8048 microcontroller SCN8048
    Contextual Info: NAPC/ SI6NETICS Signetics aiE D • bfci53T54 0Q5S33Ô ñ SCN8400 Series 17 W % i9 - ô S Single-Chip 8-Bit Microcontroller c Product Specification Microprocessor Products FEATURES • l2C serial I/O that can be used in single or multimaster systems serial I/O data and clock via


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    SCN8400 SCN84XX 20-pin SCN8422 SCN8442, SCN8048. -C2-27pF 100/iH 56/aH 33fiH Philips MAB8021 MAB8021 8048 microcontroller processor 8048 TI 8048 CPU 8048 BASED 8048 pin details signetics N28 block diagram of 8048 microcontroller SCN8048 PDF

    BSZ520N15NS3

    Abstract: marking 6B s4si 6B104 I6025 marking a6b
    Contextual Info: Je]R BSZ520N15NS3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q AD:> :J65 7@B 54 54 4@? F6BC:@? Q 492 ? ? 6=  ? @B> 2 = 6F6= V 9I )-( K R 9I"\[#$ZNd -* Z" I9 *) 6 Q  H46= = 6? D82 D6 492 B86 HR 9I"\[# AB@5E4D ) '  Q& @G @? B6C:CD2 ? 46 R 9I"\[#


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    BSZ520N15NS3 marking 6B s4si 6B104 I6025 marking a6b PDF

    d5cd

    Abstract: IPI024N06N3 G
    Contextual Info: IPB021N06N3 G Ie\Q IPI024N06N3 G IPP024N06N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 R  , ? >=1H, & Q @D9=9J54 D53 8>? <? 7I 6? B    3 ? >F5BD5BC   I9 .( J *& Y" )*( 6


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    IPB021N06N3 IPI024N06N3 IPP024N06N3 d5cd IPI024N06N3 G PDF

    da5 diode

    Abstract: BC519 IPB048N06L IPP048N06L DA QG marking 1bc
    Contextual Info: IPP048N06L G IPB048N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R  , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5<  E5AB9 ?> I9 .( J ,&, Y" ( 6 P   S ? @5A1C


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    IPP048N06L IPB048N06L da5 diode BC519 DA QG marking 1bc PDF

    55B5

    Abstract: IPB036N12N marking eb5 Diode 9H diode 1D marking G9
    Contextual Info: IPB036N12N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4     3 ? >F5BD5BC Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H *( J R 9H"[Z#$YMd +&. Y" I9 )0( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 + 9H"[Z#


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    IPB036N12N3 65AE5 55B5 IPB036N12N marking eb5 Diode 9H diode 1D marking G9 PDF

    marking EB diode

    Abstract: Q451 ee 19 8b qg
    Contextual Info: IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q ' 3 81>>5< >? B=1<<5F5< R  , ? >=1H, & Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &    I9 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# 0( J -&,


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    IPP057N08N3 IPI057N08N3 IPB054N08N3 marking EB diode Q451 ee 19 8b qg PDF

    IPA105N15N3

    Abstract: IPA105N15N 81a diode
    Contextual Info: IPA105N15N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  V 9H -( J R  , ? >=1G )(&- Y" +/ I9 6 P. 5AH <? F ? > A5B9BC1>3 5 R 9H"[Z# P   S ? @5A1C9>7 C5=@5A1CDA5


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    IPA105N15N3 IPA105N15N 81a diode PDF

    IPD320N20N3

    Abstract: marking EB5
    Contextual Info: IPD320N20N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H *( J R 9H"[Z#$YMd +* Y" I9 +, 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q   T ? @5B1D9>7 D5=@5B1D EB5


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    IPD320N20N3 7865AE5 marking EB5 PDF

    P200A

    Abstract: IC 4543
    Contextual Info: TL16PNP200A STANDALONE PLUG-AND-PLAY PnP CONTROLLER S LLS 274A -A P R IL I9 9 7 -R E V IS ED MAY 1997 PnP Card Autoconfiguration Sequence Compliant Satisfies All Requirements for Qualifying for the Windows 95 Logo Supports up to Five Logical Devices Simple 3-Terminal Interface to Serial


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    TL16PNP200A 24-Bit 16-Bit ST93C56/66 P200A IC 4543 PDF

    B1C DIODE

    Abstract: IPB039N10N3 marking 1c marking a5 4r diode
    Contextual Info: IPB039N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  V 9H ( J R 9H"[Z#$YMc +&1 Y" I9 ).( 6 P. 5AH <? F ? > A5B9BC1>3 5 R 9H"[Z# P " 978 3 DAA5>C3 1@12 9<9CH


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    IPB039N10N3 B1C DIODE marking 1c marking a5 4r diode PDF

    DA5 diode

    Contextual Info: IPB110N06L G IPP110N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R  , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5<  E5AB9 ?> I9 .( J Y" /0 6 P   S ? @5A1C


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    IPB110N06L IPP110N06L DA5 diode PDF

    Contextual Info: IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G  3 Power-Transistor Product Summary Features Q฀#451<฀6?B฀8978฀6B5AE5>3I฀CG9D389>7฀1>4฀CI>3 ฀B53 Q฀ @D9=9J54฀D538>?<?7I฀6?B฀ ฀3?>F5BD5BC V 9H 0( J R 9H"[Z#$YMd +&- Y I9 (


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    IPP037N08N3 IPI037N08N3 IPB035N08N3 CG9D389 381B75à D5CD54 D1B75Dà 931D9? PDF

    Contextual Info: IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q ' 3 81>>5< >? B=1<<5F5< R  , ? >=1H- Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( &   I9 ( J ,&* Y" )( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z#


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    IPB042N10N3 IPI045N10N3 IPP045N10N3 PDF

    4b 5c marking

    Abstract: PG-TO-263-7
    Contextual Info: IPB030N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 Q @D9=9J54 D53 8>? <? 7I 6? B=? D? B4B9F5 1@@<931D9 ? >C V 9H 0( J R 9H"[Z#$YMd +&( Y" I9 .( 6 Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & 


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    IPB030N08N3 4b 5c marking PG-TO-263-7 PDF

    marking EB5

    Abstract: 5CC1
    Contextual Info: BSC320N20NS3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H *( J R 9H"[Z#$YMd +* Y" I9 +. 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q 2 6B55 <514 @<1D9 >7 + ? " , 3 ? =@<9


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    BSC320N20NS3 7865AE5 marking EB5 5CC1 PDF

    BC519

    Abstract: 81a diode
    Contextual Info: IPB070N06N G IPP070N06N G IPI070N06N G "%&$!"# Power-Transistor Product Summary Features V 9H P & ? F 71C 5 3 81A75 6? A61BCBF9C 3 89 >7 1@@<9 3 1C 9? >B R  , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C >? A=1<<5E5<  E5AB9 ?> I9 .( J .&/ Y" 0( 6 P   S ? @5A1C


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    IPB070N06N IPP070N06N IPI070N06N BC519 81a diode PDF

    Diode Marking C.3

    Abstract: da5 diode DA5 marking 5411C
    Contextual Info: IPB070N06L G IPP070N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R  , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5<  E5AB9 ?> I9 .( J .&/ Y" 0( 6 P   S ? @5A1C


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    IPB070N06L IPP070N06L Diode Marking C.3 da5 diode DA5 marking 5411C PDF

    65A3

    Abstract: 5E DIODE marking c-9
    Contextual Info: IPB037N06N3 G Id\Q IPI040N06N3 G IPP040N06N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H P 6? ABH>3 A53 C96931C9? > 4A9E5B1>4 43 43 ,& , R  , ? >=1G, & P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  I9   P ' 3 81>>5< >? A=1<<5E5<


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    IPB037N06N3 IPI040N06N3 IPP040N06N3 65A3 5E DIODE marking c-9 PDF