BA10324A
Abstract: ba10324af BA10324AFV ba1032
Contextual Info: Quad ground sense operational amplifiers BA10324A BA10324AF BA10324AFV BA10324A, BA10324AF, and BA10324AFV are monolithic ICs incorporating four phase-compensated operational amplifiers. Dimensions U n its : mm BA10324A (DIP14) I9 .4 ± 0 .3 Features •
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NDP405B
Abstract: NDP405A NDP406A
Contextual Info: a t i o n a Semiconductor l o c to b e r i9 9 i NDP405A/NDP405B, NDP406A/NDP406B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's proprietary, high
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ndp405a/ndp405bndp406a/ndp406bndp405bndp405a+1ndp406a
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9926C
Abstract: IPI037N06L3 s4si IPP037N06L3 G
Contextual Info: IPB034N06L3 G Jf]R IPI037N06L3 G IPP037N06L3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R - @? > 2 I - ' R AE:> :K65 E649? @= @8J 7@C 4@? G6CE6CD I9 . K +&, Z" 1(
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ipb034n06l3ipi037n06l3ipp037n06l376bf6+4766substances9926cs4siipp037n06l3 g
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b12 7d diode
Contextual Info: IPB034N06N3 G Id\Q "%&$!"# 3 Power-Transistor Product Summary Features P 6? ABH>3 A53 C96931C9? > =? C? A 4A9E5B1>4 43 43 , & , P G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C & V 9H .( J R 9H"[Z#$YMc +&, Y" I9 )( 6 P. 5AH <? F ? > A5B9BC1>3 5 R 9H"[Z#
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ipb034n06n3b12 7d diode |
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motorola 100 w amplifier
Abstract: PA9OO-I9-1OOUD
Contextual Info: Order this data sheet MOTOROLA by PA9OO-I9-1OOUD SEMICONDUCTOR TECHNICAL DATA I Advance information PA900-I 9-1 OOL The RF Line Linear Power Amplifier Designed for cellular radio base stations in the 850 to 900 MHz frequency range. This microstrip circuit technology
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pa900-ipa900-19-imotorola 100 w amplifierpa9oo-i9-1ooud |
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IPB029N06N3G
Contextual Info: IPB029N06N3 G Ie\Q IPI032N06N3 G IPP032N06N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 R , ? >=1H , & Q @D9=9J54 D53 8>? <? 7I 6? B 3 ? >F5BD5BC I9 .( J *&1 Y" *(
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Philips MAB8021
Abstract: MAB8021 8048 microcontroller processor 8048 TI 8048 CPU 8048 BASED 8048 pin details signetics N28 block diagram of 8048 microcontroller SCN8048
Contextual Info: NAPC/ SI6NETICS Signetics aiE D • bfci53T54 0Q5S33Ô ñ SCN8400 Series 17 W % i9 - ô S Single-Chip 8-Bit Microcontroller c Product Specification Microprocessor Products FEATURES • l2C serial I/O that can be used in single or multimaster systems serial I/O data and clock via
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scn8400scn84xx20-pinscn8422+15scn8442scn8048-c2-27pf100/ih56/ah33fihphilips mab8021mab80218048 microcontrollerprocessor 8048ti 8048 cpu8048 based8048 pin detailssignetics n28block diagram of 8048 microcontroller
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BSZ520N15NS3
Abstract: marking 6B s4si 6B104 I6025 marking a6b
Contextual Info: Je]R BSZ520N15NS3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q AD:> :J65 7@B 54 54 4@? F6BC:@? Q 492 ? ? 6= ? @B> 2 = 6F6= V 9I )-( K R 9I"\[#$ZNd -* Z" I9 *) 6 Q H46= = 6? D82 D6 492 B86 HR 9I"\[# AB@5E4D ) ' Q& @G @? B6C:CD2 ? 46 R 9I"\[#
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bsz520n15ns3marking 6bs4si6b104+2i6025marking a6b
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d5cd
Abstract: IPI024N06N3 G
Contextual Info: IPB021N06N3 G Ie\Q IPI024N06N3 G IPP024N06N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 R , ? >=1H, & Q @D9=9J54 D53 8>? <? 7I 6? B 3 ? >F5BD5BC I9 .( J *& Y" )*( 6
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ipb021n06n3ipi024n06n3ipp024n06n3d5cd+1ipi024n06n3 g
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da5 diode
Abstract: BC519 IPB048N06L IPP048N06L DA QG marking 1bc
Contextual Info: IPP048N06L G IPB048N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5< E5AB9 ?> I9 .( J ,&, Y" ( 6 P S ? @5A1C
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ipp048n06lipb048n06lda5 diodebc519+2da qgmarking 1bc
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55B5
Abstract: IPB036N12N marking eb5 Diode 9H diode 1D marking G9
Contextual Info: IPB036N12N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 3 ? >F5BD5BC Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H *( J R 9H"[Z#$YMd +&. Y" I9 )0( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 + 9H"[Z#
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ipb036n12n365ae555b5ipb036n12n+4marking eb5diode 9hdiode 1dmarking g9
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marking EB diode
Abstract: Q451 ee 19 8b qg
Contextual Info: IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q ' 3 81>>5< >? B=1<<5F5< R , ? >=1H, & Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & I9 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# 0( J -&,
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ipp057n08n3ipi057n08n3ipb054n08n3marking eb diode+2q451ee 19 8b qg
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IPA105N15N3
Abstract: IPA105N15N 81a diode
Contextual Info: IPA105N15N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C & V 9H -( J R , ? >=1G )(&- Y" +/ I9 6 P. 5AH <? F ? > A5B9BC1>3 5 R 9H"[Z# P S ? @5A1C9>7 C5=@5A1CDA5
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ipa105n15n3ipa105n15n81a diode |
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IPD320N20N3
Abstract: marking EB5
Contextual Info: IPD320N20N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H *( J R 9H"[Z#$YMd +* Y" I9 +, 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D EB5
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P200A
Abstract: IC 4543
Contextual Info: TL16PNP200A STANDALONE PLUG-AND-PLAY PnP CONTROLLER S LLS 274A -A P R IL I9 9 7 -R E V IS ED MAY 1997 PnP Card Autoconfiguration Sequence Compliant Satisfies All Requirements for Qualifying for the Windows 95 Logo Supports up to Five Logical Devices Simple 3-Terminal Interface to Serial
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tl16pnp200a24-bit16-bitst93c56/66+2p200aic 4543
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B1C DIODE
Abstract: IPB039N10N3 marking 1c marking a5 4r diode
Contextual Info: IPB039N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C & V 9H ( J R 9H"[Z#$YMc +&1 Y" I9 ).( 6 P. 5AH <? F ? > A5B9BC1>3 5 R 9H"[Z# P " 978 3 DAA5>C3 1@12 9<9CH
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ipb039n10n3b1c diodemarking 1cmarking a5 4r diode |
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DA5 diode
Contextual Info: IPB110N06L G IPP110N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5< E5AB9 ?> I9 .( J Y" /0 6 P S ? @5A1C
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ipb110n06lipp110n06lda5 diode |
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Contextual Info: IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G 3 Power-Transistor Product Summary Features Q#451<6?B89786B5AE5>3ICG9D389>71>4CI>3 B53 Q @D9=9J54D538>?<?7I6?B 3?>F5BD5BC V 9H 0( J R 9H"[Z#$YMd +&- Y I9 (
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ipp037n08n3ipi037n08n3ipb035n08n3cg9d389+4381b75d5cd54d1b75d931d9
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Contextual Info: IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q ' 3 81>>5< >? B=1<<5F5< R , ? >=1H- Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & I9 ( J ,&* Y" )( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z#
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4b 5c marking
Abstract: PG-TO-263-7
Contextual Info: IPB030N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 Q @D9=9J54 D53 8>? <? 7I 6? B=? D? B4B9F5 1@@<931D9 ? >C V 9H 0( J R 9H"[Z#$YMd +&( Y" I9 .( 6 Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( &
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ipb030n08n34b 5c markingpg-to-263-7 |
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marking EB5
Abstract: 5CC1
Contextual Info: BSC320N20NS3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H *( J R 9H"[Z#$YMd +* Y" I9 +. 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q 2 6B55 <514 @<1D9 >7 + ? " , 3 ? =@<9
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bsc320n20ns37865ae5marking eb55cc1 |
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BC519
Abstract: 81a diode
Contextual Info: IPB070N06N G IPP070N06N G IPI070N06N G "%&$!"# Power-Transistor Product Summary Features V 9H P & ? F 71C 5 3 81A75 6? A61BCBF9C 3 89 >7 1@@<9 3 1C 9? >B R , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C >? A=1<<5E5< E5AB9 ?> I9 .( J .&/ Y" 0( 6 P S ? @5A1C
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ipb070n06nipp070n06nipi070n06nbc519+181a diode
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Diode Marking C.3
Abstract: da5 diode DA5 marking 5411C
Contextual Info: IPB070N06L G IPP070N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5< E5AB9 ?> I9 .( J .&/ Y" 0( 6 P S ? @5A1C
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ipb070n06lipp070n06ldiode marking c.3da5 diode+2da5 marking5411c
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65A3
Abstract: 5E DIODE marking c-9
Contextual Info: IPB037N06N3 G Id\Q IPI040N06N3 G IPP040N06N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H P 6? ABH>3 A53 C96931C9? > 4A9E5B1>4 43 43 ,& , R , ? >=1G, & P G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C & I9 P ' 3 81>>5< >? A=1<<5E5<
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ipb037n06n3ipi040n06n3ipp040n06n365a3+25e diodemarking c-9
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