IPB039N10N3 Search Results
IPB039N10N3 Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IPB039N10N3 G | Infineon Technologies | N-Channel MOSFETs (20V - 250V); Package: PG-TO263-7; Package: D2PAK 7pin (TO-263 7pin); VDS (max): 100.0 V; RDS (on) (max) (@10V): 3.9 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 160.0 A; | Original | 312.74KB | 9 | ||
| IPB039N10N3GATMA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 160A TO263-7 | Original | 663.26KB | |||
| IPB039N10N3GE8187 | Infineon Technologies | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 160A TO263-7 | Original | 9 | |||
| IPB039N10N3GE8187ATMA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 160A TO263-7 | Original | 668.11KB |
IPB039N10N3 Price and Stock
Infineon Technologies AG IPB039N10N3 GTransistor: N-MOSFET; 100V; 160A; Idm: 640A; 214W; TO263-7 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB039N10N3 G | 281 | 25 |
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IPB039N10N3 G | 281 | 28 |
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IPB039N10N3 G | 5 |
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IPB039N10N3 G | 21,000 |
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Infineon Technologies AG IPB039N10N3GATMA1Transistor: N-MOSFET; unipolar; 100V; 160A; 214W; PG-TO263-7 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB039N10N3GATMA1 | 1 |
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IPB039N10N3GATMA1 | 364 | 2 |
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IPB039N10N3GATMA1 | Tape & Reel | 52 Weeks | 1,000 |
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IPB039N10N3GATMA1 |
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IPB039N10N3GATMA1 | Cut Strips | 364 | 18 Weeks | 1 |
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IPB039N10N3GATMA1 | Bulk | 1 |
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IPB039N10N3GATMA1 | 100 |
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IPB039N10N3GATMA1 | 19 Weeks | 1,000 |
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IPB039N10N3GATMA1 | 1,112 |
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Infineon Technologies AG IPB039N10N3GE8187ATMA1- Tape and Reel (Alt: IPB039N10N3GE8187ATMA1) |
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IPB039N10N3GE8187ATMA1 | Tape & Reel | 32,000 |
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Infineon Technologies AG IPB039N10N3GTrans MOSFET N-CH 100V 160A 7-Pin(6+Tab) D2PAK T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB039N10N3G | 18 |
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IPB039N10N3G | 224 |
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| IPB039N10N3G | 7 |
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IPB039N10N3G | 10,000 |
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Infineon Technologies AG IPB039N10N3GE8197ATMA112V-300V N-Channel Power MOSFET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB039N10N3GE8197ATMA1 | 3 | 1 |
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IPB039N10N3 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
039N10N
Abstract: IPB039N10N3 IEC61249-2-21 JESD22 IPB039N10N3 G
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ipb039n10n3iec61249-2-21pg-to263-7039n10n+2 | |
039N10N
Abstract: IPB039N10N3 JESD22 ipb039N10N3G
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ipb039n10n3pg-to263-7039n10njesd22+1 | |
B1C DIODE
Abstract: IPB039N10N3 marking 1c marking a5 4r diode
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ipb039n10n3b1c diodemarking 1cmarking a5 4r diode | |
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Contextual Info: IPB039N10N3 G 3 Power-Transistor Product Summary Features P' 381>>5<>?A=1<<5E5< PG35<<5>C71C5381A75GR 9H"[Z#@A?4D3C & V 9H ( J R 9H"[Z#$YMc +&1 Y I9 ).( 6 P.5AH<?F?> A5B9BC1>35R 9H"[Z# P"9783DAA5>C31@129<9CH |
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ipb039n10n3381a75c1a75c931c9+1 | |
igbt welding machine scheme
Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
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igbt welding machine schemeikw40n120h3aircon l1smd diode schottky code marking sj+6 | |
PX3544
Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
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lead519b152-h9345-g2-x-7600px3544px7510+8 | |
TLE4957C
Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
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tle4957csle66r35e7sak-xc2060m-104f80l aaesd204+6 |