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    HYNIX PROCESS CODE Search Results

    HYNIX PROCESS CODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FM42LUG
    Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80B Datasheet
    TMP89FS28LFG
    Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP176-P-2020-0.40D Datasheet
    TMP89FS62BUG
    Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP44-1010-0.80-003 Datasheet
    TMP89FH40NG
    Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/SDIP42-P-600-1.78 Datasheet
    TMP89FM42UG
    Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80B Datasheet

    HYNIX PROCESS CODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    HYNIX lot date code

    Abstract: 363P 686u 747p 415P 1P2M PI5V330 PI5V331 PI5C3125 PI5C3126
    Contextual Info: 3545 North First St. • San Jose, CA 95134 • USA PRODUCT/PROCESS CHANGE NOTICE PCN PCN Number: 04-07 Date Issued: April 8, 2004 Product(s) Affected: PI5C3257, PI5C33X257, and PI5V330 Manufacturing Location Affected: Hynix Semiconductor, Korea Date Effective: July 8, 2004


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    PI5C3257, PI5C33X257, PI5V330 200-mm HYNIX lot date code 363P 686u 747p 415P 1P2M PI5V330 PI5V331 PI5C3125 PI5C3126 PDF

    HYNIX lot date code

    Abstract: HYNIX manufacturing code HP8110A "TSMC 0.6um" thermostream 1P2M A18-B18 TBS24 1p2m tsmc HP8116A
    Contextual Info: 3545 North First St. • San Jose, CA 95134 • USA PRODUCT/PROCESS CHANGE NOTICE PCN PCN Number: 04-03 Date Issued: March 1, 2004 Product(s) Affected: PI5C16862C Manufacturing Location Affected: Hynix Semiconductor Date Effective: June 1, 2004 (calendar week 23, 2004).


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    PI5C16862C 50pF//500W 50pF//500W, 10MHz 20MHz HYNIX lot date code HYNIX manufacturing code HP8110A "TSMC 0.6um" thermostream 1P2M A18-B18 TBS24 1p2m tsmc HP8116A PDF

    Contextual Info: HY64UD16322A Series Document Title 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Jan. 03. ’03 Preliminary 1.1 Change process code May. 13. ’03 -B This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not


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    HY64UD16322A 32Mbit HYUD16322A PDF

    SMTP

    Contextual Info: Hynix semiconductor INTRODUCTION From now on, you can hook your product onto the inter-net directly. Put the PC aside, HMS91C7432 do all the jobs that the PC do for inter-net connection. HMS91C7432 is a CMOS IC with a complete TCP/IP protocol suite to facilitate


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    HMS91C7432 HMS91C7 SMTP PDF

    HMS91C7432

    Abstract: SMTP hynix internal process code hynix module internal process code HMS91C7432 modem PSOP-20
    Contextual Info: Hynix semiconductor INTRODUCTION From now on, you can hook your product onto the inter-net directly. Put the PC aside, HMS91C7432 do all the jobs that the PC do for inter-net connection. HMS91C7432 is a CMOS IC with a complete TCP/IP protocol suite to facilitate


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    HMS91C7432 5M-1982 SMTP hynix internal process code hynix module internal process code HMS91C7432 modem PSOP-20 PDF

    Contextual Info: H18GAD21H Data Sheet Preliminary 1. General Description The H18GAD21H is a CMOS 0.18㎛, 1-poly, 3-metal 10 bits 30MHz ADC(analog-to-digital converter) for video signal processing. The H18GAD21H has an on-chip input sample-and-hold amplifier. By implementing a multistage pipelined architecture with output correction logic, the


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    H18GAD21H 30MHz 30MHz PDF

    HYNIX process code

    Contextual Info: H18GAD22H Data Sheet Preliminary 1. General Description The H18GAD22H is a CMOS 0.18㎛, 1-poly, 4-metal, MIM 8 bits 100MHz ADC(analog-to-digital converter) for video signal processing and communication chips. The H18GAD22H has an on-chip input sample-and-hold amplifier. By implementing a multistage pipelined architecture with output correction logic,


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    H18GAD22H 100MHz 100MHz( 100MHz) 1500u 1600u H18GAD22H) HYNIX process code PDF

    Contextual Info: H18GAD22H Data Sheet Preliminary 1. General Description The H18GAD22H is a CMOS 0.18㎛, 1-poly, 4-metal, MIM 8 bits 100MHz ADC(analog-to-digital converter) for video signal processing and communication chips. The H18GAD22H has an on-chip input sample-and-hold amplifier. By implementing a multistage pipelined architecture with output correction logic,


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    H18GAD22H H18GAD22H 100MHz 100MHz( 100MHz) H18GAD22H) PDF

    diseqc

    Abstract: demodulator qpsk HDM8516 64LQFP HDM8513A HDM8515
    Contextual Info: QPSK Demodulator & FEC HDM8516 DESCRIPTION GENERAL FEATURE The HDM8516 digital demodulator for direct broadcast satellite DBS receivers is a single chip solution fully compliant with the European Telecommunications Standards Institute (ETSI) specification ETS 300 421. This chip integrates an


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    HDM8516 HDM8516 50Msps 100nF. 64LQFP diseqc demodulator qpsk 64LQFP HDM8513A HDM8515 PDF

    qpsk transmitter using microcontroller

    Abstract: HDM8513A MO-112 MS-026 phase locked loop applicaion HYNIX charge pump
    Contextual Info: QPSK Demodulator & FEC HDM8515A DESCRIPTION GENERAL FEATURE The HDM8515A digital demodulator for direct broadcast satellite DBS receivers is a single chip solution fully compliant with the European Telecommunications Standards Institute (ETSI) specification ETS 300 421. This chip integrates an


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    HDM8515A HDM8515A 50Msps MS-026, 100MQFP MO-112, qpsk transmitter using microcontroller HDM8513A MO-112 MS-026 phase locked loop applicaion HYNIX charge pump PDF

    Contextual Info: H18GAD42H Data Sheet Preliminary 1. General Description H18GAD42H is a CMOS 0.18㎛, 1-poly, 4-metal, MIM 10 bits Analog-to-Digital converter (ADC) for industry. This ADC cell adopts algorithmic method which makes implementation able simply. 2. Features


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    H18GAD42H H18GAD42H 10MHz 12MHz PDF

    Contextual Info: H18GAD42H Data Sheet Preliminary 1. General Description H18GAD42H is a CMOS 0.18㎛, 1-poly, 4-metal, MIM 10 bits Analog-to-Digital converter (ADC) for industry. This ADC cell adopts algorithmic method which makes implementation able simply. 2. Features


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    H18GAD42H H18GAD42H 10MHz 12MHz PDF

    Contextual Info: H18GAD42H Data Sheet Preliminary 1. General Description H18GAD42H is a 10bit CMOS 0.18㎛ ASIC, Single poly, Quadruple metal, MIM Analog-to-Digital converter (ADC) for industry. This ADC cell adopts algorithmic method which makes implementation able simply.


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    H18GAD42H 10bit 10bits 10MHz PDF

    "Overflow detection"

    Contextual Info: H25AD24S Data Sheet 1. General Description The H25AD24S is a CMOS 0.25㎛, 1-poly, 3-metal, MIM 2.5V 10-bit 100MHz ADC(analog-to-digital converter) for video signal processing and communication chips. The H25AD24S has an on-chip input sample-and-hold amplifier. By implementing a


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    H25AD24S 10-bit 100MHz 100MHz( 80MHz) H25AD24S) H25AD24S "Overflow detection" PDF

    Contextual Info: H25AD23S Data Sheet 1. General Description The H25AD23S is a CMOS 0.25㎛, 2-poly, 3-metal 2.5V 10-bit 30MHz ADC(analog-to-digital converter) for video signal processing. The H25AD23S has an on-chip input sample-and-hold amplifier. By implementing a multistage pipelined


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    H25AD23S 10-bit 30MHz 33MHz( 60MHz 33MHz) PDF

    Contextual Info: H25AD23S Data Sheet 1. General Description The H25AD23S is a CMOS 0.25㎛, 1-poly, 3-metal, MIM 10bits 30MHz ADC(analog-to-digital converter) for video signal processing. The H25AD23S has an on-chip input sample-and-hold amplifier. By implementing a multistage pipelined


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    H25AD23S 10bits 30MHz 10bits 33MHz( 60MHz PDF

    Contextual Info: H60AD21L Data Sheet 1. General Description The H60AD21L is a CMOS 0.6㎛, 2-poly, 2-metal 10-bit 20Msps analog-to-digital converter (ADC) for video signal processing. The H60AD21L has an on-chip input sample-and-hold amplifier. By implementing a multistage pipelined architecture with


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    H60AD21L 10-bit 20Msps 20Msps 20Msps) 1720Data PDF

    MARKING HYNIX Origin Country

    Abstract: MARKING HYNIX HYNIX Origin Country
    Contextual Info: HY62KF08802B Series 1Mx8bit full CMOS SRAM Document Title 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM Revision History Revision No 00 History Initial Draft Draft Date Remark Jan.19.2002 Preliminary This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any


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    HY62KF08802B 004MAX HY62KF8802B MARKING HYNIX Origin Country MARKING HYNIX HYNIX Origin Country PDF

    hynix internal process code

    Contextual Info: H25AD21H Data Sheet 1. General Description The H25AD21H is a CMOS 0.25㎛, 2-poly, 2-metal 3.3V 10-bit 25MHz ADC(analog-to-digital converter) for video signal processing. The H25AD21H has an on-chip input sample-and-hold amplifier. By implementing a multistage pipelined architecture with output correction logic,


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    H25AD21H 10-bit 25MHz 25MHz) H25AD21H) hynix internal process code PDF

    E1108ACBG-8E-E

    Abstract: M393T6450FZ3-CCC E1104ACSE-6E-E SROMBSAS18E A222G HYB18T1G800C2F-3S E1108AB-6E-E HYB18T1G400C2F-3S M393T6553CZ3-CCC M393T2950CZ3-CCC
    Contextual Info: Intel Server Boards SE8500HW4 and SE8501HW4 Memory List Test Report Summary Revision 32.0 August 2008 Intel® Server Board SE8500HW4 and SE8501HW4 Revision History Date Rev Modifications Apr/05 1.0 Initial Release. Jun/05 2.0 Added Samsung* parts. In shaded area


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    SE8500HW4 SE8501HW4 Apr/05 Jun/05 Sept/05 512MB Oct/05 Nov/05 E1108ACBG-8E-E M393T6450FZ3-CCC E1104ACSE-6E-E SROMBSAS18E A222G HYB18T1G800C2F-3S E1108AB-6E-E HYB18T1G400C2F-3S M393T6553CZ3-CCC M393T2950CZ3-CCC PDF

    a2030

    Abstract: 3CH100 Q030 PI3L110 PI3L301D PI3L301DA 3CH400
    Contextual Info: Date: Subject: March 15, 2006 Update Hynix CMOS 0.5 m 1P3M Wafer Fab Reliability Report - PI3L301D A total of 134 units successfully completed Dynamic High Temperature Operating Life (DHTOL) test with no failures for the PI3L301D device type. The units were tested for 3000 hours at a temperature of 150°C. This


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    PI3L301D PI3L301D PI3L110, 3L500, 3L510 PI3USB10, 3USB20, 3USB40 PI3DBV10, 3DBV14, a2030 3CH100 Q030 PI3L110 PI3L301DA 3CH400 PDF

    HY628100B-LLG55

    Contextual Info: HY628100B Series 128Kx8bit CMOS SRAM Document Title 128K x8 bit 5.0V Low Power CMOS slow SRAM Revision History Revision No History Draft Date Remark 10 Initial Revision History Insert Jul.14.2000 Final 11 Marking Information Add Revised - E.T -25~85°C , I.T (-40~85°C) Part Insert


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    HY628100B 128Kx8bit HY628100B HY628100B-LLG55 PDF

    VDR 0047

    Contextual Info: HY62V8400A Series 512Kx8bit CMOS SRAM Document Title 512K x8 bit 3.3V Low Power CMOS slow SRAM Revision History Revision No History Draft Date 03 Revision History Insert Revised - Improved standby current Isb1 : 30uA ¡ æ20uA Jul.06.2000 Final 04 Revised


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    HY62V8400A 512Kx8bit HY62V8400A VDR 0047 PDF

    HY62CT08081E

    Abstract: HY62CT08081E-C HY62CT08081E-DGC HY62CT08081E-DGE HY62CT08081E-DGI HY62CT08081E-DPC HY62CT08081E-DPE HY62CT08081E-DPI HY62CT08081E-E HY62CT08081E-I
    Contextual Info: HY62CT08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 5.0V Low Power Slow SRAM Revision History Revision No History Draft Date 00 Initial Nov.01.2000 Preliminary 01 Marking Information Add Revised - DC / AC Characteristics - AC Test Condition Add : 5pF Test Load


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    HY62CT08081E 32Kx8bit HY62CT08081E HY62CT08081E-C HY62CT08081E-DGC HY62CT08081E-DGE HY62CT08081E-DGI HY62CT08081E-DPC HY62CT08081E-DPE HY62CT08081E-DPI HY62CT08081E-E HY62CT08081E-I PDF