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    HYNIX PROCESS CODE Search Results

    HYNIX PROCESS CODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5446/BEA
    Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) PDF Buy
    54LS190/BEA
    Rochester Electronics LLC 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) PDF Buy
    TMP89FM42UG
    Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80B Datasheet
    TMP89FM42LUG
    Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80B Datasheet
    TMP89FS28LFG
    Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP176-P-2020-0.40D Datasheet

    HYNIX PROCESS CODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    HYNIX lot date code

    Abstract: 363P 686u 747p 415P 1P2M PI5V330 PI5V331 PI5C3125 PI5C3126
    Contextual Info: 3545 North First St. • San Jose, CA 95134 • USA PRODUCT/PROCESS CHANGE NOTICE PCN PCN Number: 04-07 Date Issued: April 8, 2004 Product(s) Affected: PI5C3257, PI5C33X257, and PI5V330 Manufacturing Location Affected: Hynix Semiconductor, Korea Date Effective: July 8, 2004


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    pi5c3257pi5c33x257pi5v330200-mm+9hynix lot date code363p686u747p415p1p2mpi5v331pi5c3125pi5c3126 PDF

    HYNIX lot date code

    Abstract: HYNIX manufacturing code HP8110A "TSMC 0.6um" thermostream 1P2M A18-B18 TBS24 1p2m tsmc HP8116A
    Contextual Info: 3545 North First St. • San Jose, CA 95134 • USA PRODUCT/PROCESS CHANGE NOTICE PCN PCN Number: 04-03 Date Issued: March 1, 2004 Product(s) Affected: PI5C16862C Manufacturing Location Affected: Hynix Semiconductor Date Effective: June 1, 2004 (calendar week 23, 2004).


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    pi5c16862c50pf//500w10mhz20mhz+10hynix lot date codehynix manufacturing codehp8110atsmc 0.6umthermostream1p2ma18-b18tbs241p2m tsmchp8116a PDF

    Contextual Info: HY64UD16322A Series Document Title 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Jan. 03. ’03 Preliminary 1.1 Change process code May. 13. ’03 -B This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not


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    hy64ud16322a32mbithyud16322a PDF

    SMTP

    Contextual Info: Hynix semiconductor INTRODUCTION From now on, you can hook your product onto the inter-net directly. Put the PC aside, HMS91C7432 do all the jobs that the PC do for inter-net connection. HMS91C7432 is a CMOS IC with a complete TCP/IP protocol suite to facilitate


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    hms91c7432hms91c7smtp PDF

    HMS91C7432

    Abstract: SMTP hynix internal process code hynix module internal process code HMS91C7432 modem PSOP-20
    Contextual Info: Hynix semiconductor INTRODUCTION From now on, you can hook your product onto the inter-net directly. Put the PC aside, HMS91C7432 do all the jobs that the PC do for inter-net connection. HMS91C7432 is a CMOS IC with a complete TCP/IP protocol suite to facilitate


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    hms91c74325m-1982smtphynix internal process code+3hynix module internal process codehms91c7432 modempsop-20 PDF

    Contextual Info: H18GAD21H Data Sheet Preliminary 1. General Description The H18GAD21H is a CMOS 0.18㎛, 1-poly, 3-metal 10 bits 30MHz ADC(analog-to-digital converter) for video signal processing. The H18GAD21H has an on-chip input sample-and-hold amplifier. By implementing a multistage pipelined architecture with output correction logic, the


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    h18gad21h30mhz PDF

    HYNIX process code

    Contextual Info: H18GAD22H Data Sheet Preliminary 1. General Description The H18GAD22H is a CMOS 0.18㎛, 1-poly, 4-metal, MIM 8 bits 100MHz ADC(analog-to-digital converter) for video signal processing and communication chips. The H18GAD22H has an on-chip input sample-and-hold amplifier. By implementing a multistage pipelined architecture with output correction logic,


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    h18gad22h100mhz1500u1600u+1hynix process code PDF

    Contextual Info: H18GAD22H Data Sheet Preliminary 1. General Description The H18GAD22H is a CMOS 0.18㎛, 1-poly, 4-metal, MIM 8 bits 100MHz ADC(analog-to-digital converter) for video signal processing and communication chips. The H18GAD22H has an on-chip input sample-and-hold amplifier. By implementing a multistage pipelined architecture with output correction logic,


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    h18gad22h100mhz PDF

    diseqc

    Abstract: demodulator qpsk HDM8516 64LQFP HDM8513A HDM8515
    Contextual Info: QPSK Demodulator & FEC HDM8516 DESCRIPTION GENERAL FEATURE The HDM8516 digital demodulator for direct broadcast satellite DBS receivers is a single chip solution fully compliant with the European Telecommunications Standards Institute (ETSI) specification ETS 300 421. This chip integrates an


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    hdm851650msps100nf64lqfp+4diseqcdemodulator qpskhdm8513ahdm8515 PDF

    qpsk transmitter using microcontroller

    Abstract: HDM8513A MO-112 MS-026 phase locked loop applicaion HYNIX charge pump
    Contextual Info: QPSK Demodulator & FEC HDM8515A DESCRIPTION GENERAL FEATURE The HDM8515A digital demodulator for direct broadcast satellite DBS receivers is a single chip solution fully compliant with the European Telecommunications Standards Institute (ETSI) specification ETS 300 421. This chip integrates an


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    hdm8515a50mspsms-026100mqfp+5mo-112qpsk transmitter using microcontrollerhdm8513aphase locked loop applicaionhynix charge pump PDF

    Contextual Info: H18GAD42H Data Sheet Preliminary 1. General Description H18GAD42H is a CMOS 0.18㎛, 1-poly, 4-metal, MIM 10 bits Analog-to-Digital converter (ADC) for industry. This ADC cell adopts algorithmic method which makes implementation able simply. 2. Features


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    h18gad42h10mhz12mhz PDF

    Contextual Info: H18GAD42H Data Sheet Preliminary 1. General Description H18GAD42H is a CMOS 0.18㎛, 1-poly, 4-metal, MIM 10 bits Analog-to-Digital converter (ADC) for industry. This ADC cell adopts algorithmic method which makes implementation able simply. 2. Features


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    h18gad42h10mhz12mhz PDF

    Contextual Info: H18GAD42H Data Sheet Preliminary 1. General Description H18GAD42H is a 10bit CMOS 0.18㎛ ASIC, Single poly, Quadruple metal, MIM Analog-to-Digital converter (ADC) for industry. This ADC cell adopts algorithmic method which makes implementation able simply.


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    h18gad42h10bit10bits10mhz PDF

    "Overflow detection"

    Contextual Info: H25AD24S Data Sheet 1. General Description The H25AD24S is a CMOS 0.25㎛, 1-poly, 3-metal, MIM 2.5V 10-bit 100MHz ADC(analog-to-digital converter) for video signal processing and communication chips. The H25AD24S has an on-chip input sample-and-hold amplifier. By implementing a


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    h25ad24s10-bit100mhz80mhz+1overflow detection PDF

    Contextual Info: H25AD23S Data Sheet 1. General Description The H25AD23S is a CMOS 0.25㎛, 2-poly, 3-metal 2.5V 10-bit 30MHz ADC(analog-to-digital converter) for video signal processing. The H25AD23S has an on-chip input sample-and-hold amplifier. By implementing a multistage pipelined


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    h25ad23s10-bit30mhz33mhz+160mhz PDF

    Contextual Info: H25AD23S Data Sheet 1. General Description The H25AD23S is a CMOS 0.25㎛, 1-poly, 3-metal, MIM 10bits 30MHz ADC(analog-to-digital converter) for video signal processing. The H25AD23S has an on-chip input sample-and-hold amplifier. By implementing a multistage pipelined


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    h25ad23s10bits30mhz33mhz+160mhz PDF

    Contextual Info: H60AD21L Data Sheet 1. General Description The H60AD21L is a CMOS 0.6㎛, 2-poly, 2-metal 10-bit 20Msps analog-to-digital converter (ADC) for video signal processing. The H60AD21L has an on-chip input sample-and-hold amplifier. By implementing a multistage pipelined architecture with


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    h60ad21l10-bit20msps1720data PDF

    MARKING HYNIX Origin Country

    Abstract: MARKING HYNIX HYNIX Origin Country
    Contextual Info: HY62KF08802B Series 1Mx8bit full CMOS SRAM Document Title 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM Revision History Revision No 00 History Initial Draft Draft Date Remark Jan.19.2002 Preliminary This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any


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    hy62kf08802b004maxhy62kf8802bmarking hynix origin country+2marking hynixhynix origin country PDF

    hynix internal process code

    Contextual Info: H25AD21H Data Sheet 1. General Description The H25AD21H is a CMOS 0.25㎛, 2-poly, 2-metal 3.3V 10-bit 25MHz ADC(analog-to-digital converter) for video signal processing. The H25AD21H has an on-chip input sample-and-hold amplifier. By implementing a multistage pipelined architecture with output correction logic,


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    h25ad21h10-bit25mhzhynix internal process code PDF

    E1108ACBG-8E-E

    Abstract: M393T6450FZ3-CCC E1104ACSE-6E-E SROMBSAS18E A222G HYB18T1G800C2F-3S E1108AB-6E-E HYB18T1G400C2F-3S M393T6553CZ3-CCC M393T2950CZ3-CCC
    Contextual Info: Intel Server Boards SE8500HW4 and SE8501HW4 Memory List Test Report Summary Revision 32.0 August 2008 Intel® Server Board SE8500HW4 and SE8501HW4 Revision History Date Rev Modifications Apr/05 1.0 Initial Release. Jun/05 2.0 Added Samsung* parts. In shaded area


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    se8500hw4se8501hw4apr/05jun/05+14sept/05512mboct/05nov/05e1108acbg-8e-em393t6450fz3-ccce1104acse-6e-esrombsas18ea222ghyb18t1g800c2f-3se1108ab-6e-ehyb18t1g400c2f-3sm393t6553cz3-cccm393t2950cz3-ccc PDF

    a2030

    Abstract: 3CH100 Q030 PI3L110 PI3L301D PI3L301DA 3CH400
    Contextual Info: Date: Subject: March 15, 2006 Update Hynix CMOS 0.5 m 1P3M Wafer Fab Reliability Report - PI3L301D A total of 134 units successfully completed Dynamic High Temperature Operating Life (DHTOL) test with no failures for the PI3L301D device type. The units were tested for 3000 hours at a temperature of 150°C. This


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    pi3l301dpi3l1103l5003l510+10pi3usb103usb203usb40pi3dbv103dbv14a20303ch100q030pi3l301da3ch400 PDF

    HY628100B-LLG55

    Contextual Info: HY628100B Series 128Kx8bit CMOS SRAM Document Title 128K x8 bit 5.0V Low Power CMOS slow SRAM Revision History Revision No History Draft Date Remark 10 Initial Revision History Insert Jul.14.2000 Final 11 Marking Information Add Revised - E.T -25~85°C , I.T (-40~85°C) Part Insert


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    hy628100b128kx8bithy628100b-llg55 PDF

    VDR 0047

    Contextual Info: HY62V8400A Series 512Kx8bit CMOS SRAM Document Title 512K x8 bit 3.3V Low Power CMOS slow SRAM Revision History Revision No History Draft Date 03 Revision History Insert Revised - Improved standby current Isb1 : 30uA ¡ æ20uA Jul.06.2000 Final 04 Revised


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    hy62v8400a512kx8bitvdr 0047 PDF

    HY62CT08081E

    Abstract: HY62CT08081E-C HY62CT08081E-DGC HY62CT08081E-DGE HY62CT08081E-DGI HY62CT08081E-DPC HY62CT08081E-DPE HY62CT08081E-DPI HY62CT08081E-E HY62CT08081E-I
    Contextual Info: HY62CT08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 5.0V Low Power Slow SRAM Revision History Revision No History Draft Date 00 Initial Nov.01.2000 Preliminary 01 Marking Information Add Revised - DC / AC Characteristics - AC Test Condition Add : 5pF Test Load


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    hy62ct08081e32kx8bithy62ct08081e-chy62ct08081e-dgc+7hy62ct08081e-dgehy62ct08081e-dgihy62ct08081e-dpchy62ct08081e-dpehy62ct08081e-dpihy62ct08081e-ehy62ct08081e-i PDF