Q030 Search Results

11AV1

Abstract: 11AV2 s415 RF M1E-H 11AV3 11AV-3
Contextual Info: MIE D PHILIPS INTERNATIONAL • 711002b Q030M24 1 M P H I N P h ilip s S e m ic o n d u c to rs Product sp ecification Heavy duty optocouplers CNW11AV-1/2/3 FEA TUR ES • Minimum 2 mm isolation thickness between emitter and receiver • A wide body encapsulation with a

Contextual Info: Philips S em iconductors bbSHTBl Q0301Mb ATS M APX Product specification UHF push-pull power MOS transistor — •— BLF545 N AMER PHILIPS/DISCRETE FEATURES b^E D _ PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures

Contextual Info: N AMER PHILIPS/DISCRETE E5E D ^ 5 3 1 3 1 Q030b7D S PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable

W536Q020

Abstract: W536Q030 pc speaker
Contextual Info: W536Q020/Q030 Voice/Melody/LCD Controller ViewTalk TM Series GENERAL DESCRIPTION TM The W536QXXX, a member of ViewTalk family, is a high-performance 4-bit micro-controller (uC) with built-in speech unit, melody unit and 40seg * 16 com LCD driver unit which includes internal regulator

Contextual Info: N AUER PH ILI PS/ DIS CR ETE 5SE D Lfa53131 Q030370 1 BUK444-500A BUK444-500B PowerMOS transistor '- 3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: N AUER PHILIPS/DISCRETE bRE ]> bb53T31 Q030fl3t, 252 B A P X Product Specification Philips Semiconductors PowerMOS transistor Logic level FET_ _ _ G E N E R A L D E SC R IP TIO N N-channel enhancement mode logic level field-effect power

JESD22-A10

Abstract: JESD22-A11 JESD22A110 22-B102
Contextual Info: RF F1633 Qualifica Q ation Rep port P Page 1 of 1 1633-PQ Q030[1], R Revision B Product Descriptio on Diffeerential DP3T SOI Switch Packa age Type Wiree-bonded QFN N, 2 x 2 x 0.5 m mm Proc cess Technollogy SOI Qualiffication # 11‐QU UAL‐1588

Contextual Info: 4.20 2.0 7.20 8.20 20.20 7.70 1.30 2.00 1.20 5.70 4.00 8.00 Q030-S-02 Q030-S-02 3.60

Contextual Info: 2.5 0.8 2.0 3.0 8.0 SEC, A-A 2.0 20.0 1.5 2.1 3.0 24.5 2.5 1.5 2.5 11.0 7.6 0.3 0.63 1.9 SEC, B-B 1.4 1.7 0.2 8P 3.2 1.2 SEC, C-C Q030-M-20 Q030-M-20

1NTC

Abstract: 28PIN IC 8-bit Microcontroller
Contextual Info: N E C ELECTRONICS INC 3QE D • b427SaS Q030G13 3 ■ ’X V . i t > MICROCONTROLLERS FOR SM A L L WHITE GOODS A PPLIAN CES / ¿ P D 1 7 1 9 , / ^ P D 1 7 1 1 0 4 BIT S IN G L E - C H IP M IC R O C O N T R O L L E R S The /¿PD17109 and ¿iPD17110 are 4-bit single-chip microcontrollers containing four channels of 8-bit A/D con­

Q060

Abstract: Q090 W536Q020 W536Q030 W536Q120
Contextual Info: W536Q020/Q030/Q060/Q090/Q120 VOICE/MELODY/LCD CONTROLLER ViewTalk TM Series Table of Contents1. GENERAL DESCRIPTION . 2 2. FEATURES . 3

Contextual Info: 2.5 3.2 - 2 3 0.1 SEC,A-A 1.9 1.5 15.3 19.8 2.55 1.5 2.5 SEC,B-B 5.8 3 0.2 1.4 A Q030-F-20 Q030-F-20 B 1.75 3 2.1 1.5 0.2 8P 1.2

Contextual Info: 4.10 2.00 6.60 5.90 29.10 3.60 2.50 4.60 1.20 8.10 7.30 4.10 5.90 Q030-P-02 Q030-P-02 SEC A-A 10.40

Contextual Info: N AUER PHILIPS/DISCRETE bRE T> bbSBRai Q030flE0 ‘IbS « A P X Product Specification Philips Semiconductors BUK556-60A PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

5358A

Abstract: d 317 transistor TSD4M251F TSD4M251V SP 358 s
Contextual Info: 3QE D • 7^237 Q0305Sb b SGS-THOMSON IILHO T *! Ç7 ' r 3 °i S G S-THOMSON 5 TSD4M251F TSD4M251V N - CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE TY P E V dss RDS on Id TS D 4M 251F/V 150 V 0.021 n 110 A . . ■ ■ . . ■ . HIGH CURRENT POWER MOS MODULE

SGS25DB070D

Abstract: LC 0809 HALF BRIDGE NPN DARLINGTON POWER MODULE NPN DARLINGTON POWER MODULE sgs25D
Contextual Info: 3QE D • rz 7 ^ 7# TWSB? Q030bcJb D ■ SC S-TH O M SO N KilD DlH] [l[LiOU^(Q lD(gi s g S-THOMSON '" f ‘3> W 5 SG S25DB070D HALF BRIDGE NPN DARLINGTON POWER MODULE . POWER MODULE WITH INTERNAL ISOLA­ TION (2500V RMS) . LOW Rth JUNCTION TO CASE > FREEWHEELING DIODE

Contextual Info: TOSHIBA TMP90CM36/M37 7 6 IE3 IE2 5 4 i i IECAP IE0 R /W 1: Fu nction Enable 0: o R ead / W rite Resetting va lu e : IETPG1 ; 2 IETPG0 3 : IEAD IE1 o FFE3H bit Sym bol o INTEO Disable T 7 7 INTE1 (FFE4H) 6 - R ead / W rite - - - - R ese ttin g va lu e 5

HP3585B

Contextual Info: Or, Call Customer Service at 1-80II-548-6132 USA Only B U R R - BROWN<i E OPA628 3 Low Distortion Wideband OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • • • • • • EXCELLENT DIFFERENTIAL GAIN: 0.015%

Contextual Info: For Immediate Assistance, Contact Your Local Salesperson BU RR -BR O W N «! I OPA644 1 DEMO BOARD AVAILABLE See Appendix A Low Distortion Current Feedback OPERATIONAL AMPLIFIER FEATURES DESCRIPTION • SLEW RATE: 2500V/|is The OPA644 is a wideband precision current feed­

Q0465

Abstract: PLC Communication cables pin diagram fanuc 90-30 plc internal cpu wiring diagram fanuc q0265 plc 90-30 CMM311 fanuc ge PLC Communication cables pin diagram Q0260 for plc internal cpu wiring diagram ge fanuc cpu 331
Contextual Info: Du line Dupline Plug & Play Master Module Interface for GE-Fanuc PLC Type G 3496 0002 ® Fieldbus Installationbus • GE-Fanuc master • Plug and play: Automatic communication with specific PLC/Controllers • Built-in normal Dupline® Channel Generator

L42n

Abstract: HM3500 adb 630 L43n "alu 4 bit" ECL IC NAND L44N PT06-16-8P-S/transistor 03e
Contextual Info: H0NEYWE1_I_/SS ELEK-, MIL [13 I>e | 4551872 DD00212 D • “ H o n eyw e ll r - n - ll'O HM3500, hvmioooo, HE12000 Preliminary ADVANCED DIGITAL BIPOLAR GATE ARRAY FAMILY FAMILY FEATURES • Broad Performance Optimized Family Allows Flexible System Partitioning:

Contextual Info: K M 4 16 C 2 5 6 D T CMOS D R A M ELECTRONICS 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

Contextual Info: KS6034C CMOS ELECTRONICS INTRODUCTION KS6034C is a single chip CMOS LSI for data bank with clock, calculator and phone number memory functions. FUNCTION - 3 operating modes available : telephone mode, calculator mode, clock mode 1 Telephone mode • Stores up to 20 items (1 item : 7 characters for

Contextual Info: KM 4 1 6 C 1 2 0 0 B T CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh