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    HY TRANSISTOR Search Results

    HY TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    54F151/BEA
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) PDF Buy
    54F573FM/B
    Rochester Electronics LLC 54F573 - Bus Driver, F/FAST Series, 1-Func, 8-Bit, True Output, TTL, PDF Buy

    HY TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    HY1Z-24V

    Abstract: HY1-12V HY1-24V HY1Z-12V LR26550 AgPd Matsua Miniature Relay s3 12v Matsua Relay Technical Information
    Contextual Info: HY High Sensitivity 1 Form C Relay in Ultra Small Size 12 .472 HY-RELAYS 7.4 .291 UL File No.: E43149 CSA File No.: LR26550 10.1 .398 • High sensitivity: 150 mW/200 mW • A wide range of ambient temperature: –40°C to +70°C –40°F to +158°F • Sealed construction


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    e43149lr26550mw/200hy1z-24v+6hy1-12vhy1-24vhy1z-12vagpdmatsua miniature relay s3 12vmatsua relay technical information PDF

    HV133WX1-100

    Abstract: 20347-040E-02 20345-040T-02 20347-040E HV133WX1 20397-008E lcd 13.3 monitor led 2600 t series pressure transmitter 20347 I-PEX lvds 40 pin
    Contextual Info: P R OP R IE T AR Y NOT E T HIS S P E C IF IC AT ION IS T HE P R OP E R T Y OF B OE HY DIS AND S HALL NOT B E R E P R ODUC E D OR C O P IE D W IT HOUT T HE W R IT T E N P E R MIS S ION OF B OE HY DIS AND MUS T B E R E T UR NE D T O B OE HY DIS UP ON IT S R E QUE S T


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    b2005-c001-as864-1360hv133wx1-100hv133w+920347-040e-0220345-040t-0220347-040ehv133wx120397-008elcd 13.3 monitor led2600 t series pressure transmitter20347i-pex lvds 40 pin PDF

    HV121P01-101

    Abstract: inverter sic 141 rev 00 repair lcd monitor samsung T-CON SAMSUNG LCD samsung t-con THC63LVDM63A samsung ccfl backlight inverter DF19L-20P-1H X199 DF19G-20S-1C
    Contextual Info: P R OP R IE T AR Y NOT E T HIS S P E C IF IC AT ION IS T HE P R OP E R T Y OF HY DIS AND S HALL NOT B E R E P R ODUC E D OR C O P IE D W IT HOUT T HE W R IT T E N P E R MIS S ION OF HY DIS AND MUS T B E R E T UR NE D T O HY DIS UP O N IT S R E QUE S T T I T LE : H V 1 2 1 P 0 1 - 1 0 1


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    2005-c001-ds864-1351b2005-c001-d+11hv121p01hv121p01-101inverter sic 141 rev 00repair lcd monitor samsungt-con samsung lcdsamsung t-conthc63lvdm63asamsung ccfl backlight inverterdf19l-20p-1hx199df19g-20s-1c PDF

    12NP135C

    Abstract: 10 ohm resistor transistor 9009
    Contextual Info: Hy-Q International MAGNETIC BUZZER MODEL 12NP135C 6.3 ±0.2 6.0 ±0.2 5.5 ±0.3 Ø0.6 x 2 + _ 13.7 ±0.3 0.5 ±0.2 6.5 ±0.3 Ø12.0 ±0.3 7.5 ±0.3 RECOMMENDED DRIVING CIRCUIT +V Rated Voltage SIGNAL PNP Transistor RESONANT FREQUENCY, 1/2 DUTY CYCLE, SQUARE WAVE.


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    12np135c10khz10 ohm resistortransistor 9009 PDF

    transistor 9009

    Abstract: circuit drawing of digital multimeter 1 ohm resistor 12NP135A magnetic BUZZER CIRCUIT
    Contextual Info: Hy-Q International MAGNETIC BUZZER MODEL 12NP135A 6.3±0.2 6.0±0.2 5.5±0.3 Ø0.6 x 2 + _ 13.7±0.3 0.5±0.2 6.5±0.3 Ø12.0±0.3 7.5±0.3 RECOMMENDED DRIVING CIRCUIT +V Rated Voltage SIGNAL PNP Transistor RESONANT FREQUENCY, 1/2 DUTY CYCLE, SQUARE WAVE.


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    12np135a10khztransistor 9009circuit drawing of digital multimeter+21 ohm resistormagnetic buzzer circuit PDF

    circuit drawing of digital multimeter

    Abstract: transistor 9009 magnetic BUZZER CIRCUIT 12NP135B Buzzer buzzer circuit transistor 2731
    Contextual Info: Hy-Q International MAGNETIC BUZZER MODEL 12NP135B 6.3 ±0.2 6.0 ±0.2 5.5 ±0.2 Ø0.6 x 2 + _ 13.7 ±0.3 0.5 ±0.2 Ø12.0 ±0.3 6.5 ±0.3 7.5 ±0.3 RECOMMENDED DRIVING CIRCUIT +V Rated Voltage SIGNAL PNP Transistor RESONANT FREQUENCY, 1/2 DUTY CYCLE, SQUARE WAVE.


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    12np135b10khzcircuit drawing of digital multimetertransistor 9009+4magnetic buzzer circuitbuzzerbuzzer circuittransistor 2731 PDF

    BF494

    Abstract: BF495 Transistors BF 494 bf 494 BF 494 C to92e case to-92e 115 92E
    Contextual Info: BF494 ï; BF 495 NPN SILICON HP SMALL SIGNAL TRANSISTORS Va €•im u stM s h i "Hy i I Ì *p:g«J ,1 CASE TO-92E THE BF4 9 4 , BF495 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR RP SMALL SIGNAL APPLICATIONS U P TO 100MH z . CBE ABSOLUTE MAXIMUM RATINGS


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    bf494bf495100mhzo-92e+8300mw10jiatransistors bf 494bf 494bf 494 cto92ecase to-92e115 92e PDF

    Contextual Info: Hy Custom Hybrid ICs Hybrid IC component specifications-BX series Item BX- 1 Process general process BX-II Double side through-holes Chip size Density (high-density process) Thickness 0.8mm, 4 layers BX- III (high-density process) Thickness 0.8mm, 4 to 6 layers


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    ll--41-65mm PDF

    Contextual Info: Hy Hybrid ICs ROHM’s Hybrid ICs ROHM produces the following four hybrid 1C series to meet various customer needs. 3 BK series Choose the series that best suits your requirements in terms of operating conditions, These are hybrid ICs formed by directly mounting chip components


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    ic 4050 pin diagram

    Abstract: telefunken ta 750 amplifier rc coupled amplifier application of ic 4050 4050B TELEFUNKEN* amplifier telefunken ta 750
    Contextual Info: Tem ic U 4050 B TELEFUNKEN Semiconductors Speech Circuit with Line-powered Loudspeaker Amplifier Description The electronic speech circuit U 4050 B is a linear inte­ grated circuit for use in telephone sets. It replaces the hy­ brid transformer, side tone equivalent and ear protection


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    d-74025ic 4050 pin diagramtelefunken ta 750 amplifierrc coupled amplifier+4application of ic 40504050btelefunken* amplifiertelefunken ta 750 PDF

    2SD1809

    Abstract: fe1000 100 amp npn darlington power transistors T103 SC511
    Contextual Info: 2SD1809 h ~7> y X $ / T ransistors 2 S D 1 8 9 !x N P N > y =3 - y > h> hy > v * * 4,W ^ Jlillliffl/M edium Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor • £Wf2rJ*i&lSl/Dimen$ions Unit: mm • « * 1) £ — u x' h fSjhFE^’’ <&) "?>o


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    2sd1809500mao-92lsc-51+6v/500ma500ma/500mafe1000100 amp npn darlington power transistorst103sc511 PDF

    ASY77

    Abstract: OC75 GERMANIUM SMALL SIGNAL TRANSISTORS ASY26 ACY34 oc75 oc76 oc77 Germanium power Germanium Power Transistors OC74
    Contextual Info: GERMANIUM SMALL SIGNAL TRANSISTORS PRO ELECTRON TYPES Voo Type Hy y VIK, V Max hrc IcBO Va y Max @ y es y M Max Cal M in Max , mA C ob P Max fa b \1H /. Min Pack Outline Pöwer Dissipation @ 25° Mh ACY33 ACY34 ACY35 ACY36 ACY38 P P P P P 32 30 30 32 15


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    acy33acy34acy35acy36+14acy38acy39acy40acy41acy44asy26asy77oc75germanium small signal transistorsoc75 oc76oc77germanium powergermanium power transistorsoc74 PDF

    OC74

    Abstract: OC76 GERMANIUM SMALL SIGNAL TRANSISTORS OC71 OC75 oc75 oc76 ASY76 ASY77 ASY80 OC72
    Contextual Info: GERMANIUM SMALL SIGNAL TRANSISTORS PRO ELECTRON TYPES Voo Type Hy y VIK, V Max hrc IcBO Va y Max @ y es y M Max M in Max Cal, mA C ob P Max fa b \1H /. Min Pack Outline Pöwer Dissipation @ 25° Mh ACY33 ACY34 ACY35 ACY36 ACY38 P P P P P 32 30 30 32 15 10


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    acy33acy34acy35acy36+16acy38acy39acy40acy41acy44asy26oc74oc76germanium small signal transistorsoc71oc75oc75 oc76asy76asy77asy80oc72 PDF

    2N5250

    Abstract: 2N5251 mug 14 431 NIL-S-19500 2N4865 2N5151 FSC5961 2N5250 JAN Xelerated SAA 1006
    Contextual Info: I I I IWE-FQUND I HIL-s-19500/380B 4 June 1991 SVPSl!5EDItK MIL-s-19500/180A( SLl 17 Septerber 1968 N2L2TARY SPECIP3CATICN SSN203N3WXUR DSV2CE, TWSISIWR,NPN,S2LIIXN,m TYPES 2N4865,2N5250,2N5251,JAIWX, JAN2’XV, ~ JANS MS s~ification is approvedfor w hy e21 Ceptusxts and lq~cies of the Deprt.uentof Defense.


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    hil-s-19500/380bmil-s-19500/180assn203n3wxurtypesn4865+15n5250n5251nil-s-19500f3-114force-17koject5961-12222n52502n5251mug 14 4312n48652n5151fsc59612n5250 janxeleratedsaa 1006 PDF

    2SC2412KLN

    Contextual Info: 2 3 2SC2412KLN $ /T ra n sisto rs h "7 > v C 2 4 1 2 K L t ‘* * >Planar T ;u y uNPN ~ ^S ilicon NPN Transistor hy>' > 7'* 'Expitaxial fé M fé & ^ tÌ< H ffl/L o w Freq. Noise Amp. N • i'W i v t'ìiS I/D im e n s io n s U nit : mm N F = 1 d B (Typ.) (at V ce = 6 V ,


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    2sc2412kln PDF

    TRANSISTOR TZ

    Contextual Info: hy V > $ IMT4 /Transistors IMT4 T'T V \s — x "J K ^— ^ — JU Kx/W 7. Isolated Mini-Mold Device raWJŒii'I’iffl/H ig h Voltage Amp. W fi^& HI/Diinensions Unit : mm 1) SMT(SC-59) ¿ I rI — 2ï i £>- r h 7 > ^ * ''A o T t '- 5 o 2) S M T < O g t(lfé * iS tC < t‘J î l * A i nIfÊ


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    sc-59transistor tz PDF

    PANASONIC CE EB

    Contextual Info: PANASONIC INDL/ELEK -CIO 72 M f f lIC AN90C00 Series A N 9 0 C 0 0 Series h * 7 > ï? 7 Is <4 /Transistor I- 7 > i> X ;? 7 1-"f AN90C00 ^ ¡ I - X l i , 4 Arrays hy « 1 i -y ? £ & iit t L t z 0SS ì i / 1 U V«/ 9 IC i t L tz •>' —X o n iiX 't* 9 f > ' 7 ' 7 X f . ? } ' S I L t c . y ' r — ì; X-,


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    an90c00-cicjc22200//apanasonic ce eb PDF

    tf81

    Contextual Info: • 7 0 2 0 ^ 0 0 0 Ô 2 Ü 1 357 ■ RHN -fe>'9‘/S e n s o rs RPT-38PT RPT-38PT Silicon Planar Phototransistor • íl-Jfé rfü Eil/D im en sion s Unit : mm RPT-38PT ti., -fe is -y- m t-h hy> > z$?to «an; ”"103.1 ±0.2 K SIR-38ST * h h "7 RPT-38PT represents silicon planer


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    rpt-38ptsir-38st500luxtf81 PDF

    2N7002 NXP MARKING

    Abstract: TL431 transistor 139 et cd player amplifier double ic 4440 BCM 4709 sot1194 SSOP14 land pattern ip4065cx11 PMV27UP TRANSISTOR SMD CODE PACKAGE SOT89 gy IP4058CX8/LF
    Contextual Info: Discrete Semiconductors Selection Guide 2011 Diodes, protection and signal conditioning devices, bipolar transistors, MOSFETs, thyristors SOD323 SC-76 SOD323 (SC-76) SOD882D / SOD882 SOD882D / SOD882 SOD123F SOD123F SOD80C SOD80C SOT883 (SC-101)  Very high ESD protection levels and


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    od323sc-76od882dod882+11od123f2n7002 nxp markingtl431 transistor 139 etcd player amplifier double ic 4440bcm 4709sot1194ssop14 land patternip4065cx11pmv27uptransistor smd code package sot89 gyip4058cx8/lf PDF

    10K preset

    Abstract: barber ZRA500 4066 u3a the Wheatstone Bridge magnetic stripe immobiliser Ni81Fe19 ZMY20M permalloy zmy20
    Contextual Info: Application Note 20 Issue 1 April 1996 Magnetoresistive Sensors Principles of Operation and Applications Stefan Hübschmann Matthias Schneider This a pplication note provides an overview of the Zetex range of Magnetoresistive sensors. The layout of a typical magnetoresistive


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    zmy20ni81fe1910k presetbarber+7zra5004066 u3athe wheatstone bridgemagnetic stripeimmobiliserzmy20mpermalloy zmy20 PDF

    smd transistor HY 30

    Abstract: smd transistor HY 10
    Contextual Info: TCA 505 B Revision History: Original Version 09.91 Previous Releases: TCA 505 Page Subjects changes since last revision Data Classification Maximum Ratings Maximum ratings are absolute ratings; exeeding only one of these values may cause ir­ reversible damage to the integrated circuit.


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    p-dip-16p-dso-16smd transistor hy 30smd transistor hy 10 PDF

    4814 transistor

    Abstract: 4814 charge TDA-4814 dip 4814 ic 4814 Q67000-A8163 active harmonic filter P-DIP-14-1 4814A 4814
    Contextual Info: Power Factor Controller TDA 4814 IC for High Power Factor and Active Harmonic Filter Bipolar IC Features IC for sinusoidal line-current consumption Power factor approaching 1 Controls boost converter as an active harmonics filter Direct drive of SIPMOS transistor


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    p-dip-14-1q67000-a81634814 transistor4814 charge+6tda-4814dip 4814ic 4814active harmonic filter4814a4814 PDF

    ISP824-1

    Contextual Info: AC Input Photo Transistors Low Input Current 4 pin Packages fte t N u M te r : C o f ftttita m ia r m io v««<uv f M M S /a S /lm A W n {% ISP814-1 ISP814-2 ISF814-3 Two Infra-Red LEDs Connected In Inverse Parallel ISP824-1 ISP824-2 Dual Independent AC Input Isolators


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    isp814-1isp814-2isf814-3isp824-1+6isp824-2isp824-3isp844-1isp844-2isp844-3en60950 PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors KTA1663 TRANSISTOR PNP 1 FEATURES Power dissipation 0.5 W (Tamb=25℃) PCM: Collector current -1.5 A ICM: Collector-base voltage -35 V V(BR)CBO: Operating and storage junction temperature range


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    ot-89kta1663-10ma-500ma+2-30ma500ma PDF