HV MOSFET Search Results

Contextual Info: User's Guide SNVA106B – September 2005 – Revised April 2013 AN–1367 LM5115 HV DC Evaluation Board 1 Introduction The LM5115 HV DC evaluation board provides a synchronous buck dc-dc converter using the LM5115 secondary side post regulator control IC.

ignition driver

Abstract: FJAFS1510A fairchild Resonant IC FJAFS1510ATU FDC655 HV cascode smps cascode smps
Contextual Info: FJAFS1510A ESBCTM Rated NPN Power Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, SMPS, HV Industrial Power Supplies

irfcg20

Abstract: HV MOSFET
Contextual Info: SENSITRON SEMICONDUCTOR SCP-4926 TECHNICAL DATA DATASHEET 1138, REV. C HV MOSFET Power Module Data Sheet DESCRIPTION: 3000 VOLT, 1.0 AMP, INDUSTRIAL MOSFET POWER MODULE. AT Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL CONDITION

Contextual Info: tSENSITRON SCP-4926 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1138, REV. ENG. B HV MOSFET MODULATOR DESCRIPTION: AN 1800 VOLT, 1.0 AMP, INDUSTRIAL MOSFET POWER MODULE. AT Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL CONDITION

Contextual Info: FJAFS1510A ESBCTM Rated NPN Power Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, SMPS, HV Industrial Power Supplies

HV MOSFET

Abstract: 400v 20 amp mosfet 2N7002 SCP-4926
Contextual Info: SENSITRON SEMICONDUCTOR SCP-4926 TECHNICAL DATA DATASHEET 1138, REV. D HV MOSFET Power Module Data Sheet DESCRIPTION: 3000 VOLT, 1.0 AMP, INDUSTRIAL MOSFET POWER MODULE AT Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL CONDITION

Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFL38N100P RDS on trr ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1000V 29A Ω 230mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions

SCP-4926

Abstract: 2N7002
Contextual Info: SENSITRON SEMICONDUCTOR SCP-4926 TECHNICAL DATA DATASHEET 1138, REV. D HV MOSFET Power Module Data Sheet DESCRIPTION: 3000 VOLT, 1.0 AMP, INDUSTRIAL MOSFET POWER MODULE AT Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL CONDITION

IXFL38N100P

Abstract: 38N100
Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFL38N100P VDSS ID25 RDS on trr ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 29A Ω 230mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol

IRFCG20

Abstract: MOSFET 50 amp 1000 volt
Contextual Info: SENSITRON SEMICONDUCTOR SCP-4926 TECHNICAL DATA DATASHEET 1138, REV. C HV MOSFET Power Module Data Sheet DESCRIPTION: 3000 VOLT, 1.0 AMP, INDUSTRIAL MOSFET POWER MODULE. AT Tj=25 C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PARAMETER POWER MOSFETS Q1,…,6

123B16

Contextual Info: Advance Technical Information PolarTM Power MOSFET HiPerFETTM IXFL32N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 24A Ω 340mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings

Contextual Info: Advance Technical Information PolarTM Power MOSFET HiPerFETTM IXFL36N110P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1100V 26A Ω 260mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings

fairchild power bjt

Abstract: fjp2160d fdc6551 cascode mosfet switching ESBC j2160 J2160D C 1008 y transistor input output bjt npn transistor
Contextual Info: FJP2160D ESBCTM Rated NPN Silicon Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, HV Industrial Power Supplies • Motor Driver and Ignition Driver

PZT Transducer

Abstract: ultrasonic generator schematic ultrasound transducer 10MHz ultrasound transducer circuit driver PZT Transducer ultrasonic Sensor OPB3 ultrasound piezoelectric design probe transducer ultrasonic piezoelectric transducer driver mems ultrasonic transducers ultrasound transducer Input output waveforms
Contextual Info: Supertex inc. MD1711DB2 MD1711 + TC6320 Demoboard Five-Level, Dual Channel ±100V 2.0A RTZ Pulser Features ► ► ► ► ► ► ► ► Five-level, dual-channel ultrasound transmitter MD1711 driving six TC6320 HV MOSFETs Design for RTZ waveforms outputs

tl 078

Contextual Info: Advance Technical Information PolarTM Power MOSFET HiPerFETTM IXFL38N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 29A Ω 230mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings

Contextual Info: NCP4810 X2 Capacitors Discharger The NCP4810 is a HV switch suitable for implementation of the X2 capacitor discharge function in applications with extremely low standby consumption requirements. It contains two high voltage MOSFETs with 700 V peak capabilities that can be connected directly

Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFL40N110P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1100V 21A Ω 280mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions VDSS TJ = 25°C to 150°C

Contextual Info: Advance Technical Information PolarTM Power MOSFET HiPerFETTM IXFL32N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 24A Ω 340mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions VDSS TJ = 25°C to 150°C

Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFL30N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 18A Ω 380mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions VDSS TJ = 25°C to 150°C

AN-978

Abstract: "AN-978" IR2110 AN-978 IR2110 inverter using irs2110 PWM IR2112 IRF540 ir2110 Application Note AN-967 PWM IR2117 dc to dc converter IR2110 INVERTER SCHEMATIC full bridge ir2110 Inverter IR2110
Contextual Info: Application Note AN-978 HV Floating MOS-Gate Driver ICs HEXFET is a trademark of International Rectifier Table of Contents Page Gate drive requirement of high-side devices. 2 A typical block diagram . 3

44n10

Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFL44N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 22A Ω 240mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000

TOPSWITCH

Abstract: "Brushless DC Motor Drive Circuit" INT201PFI switched reluctance motor parameter 566B A 1469 mosfet brushless dc motor speed control simple circuit 285D INT200 INT201
Contextual Info: INT201 High-side Driver IC Floating Inputs Floating High-side Drive Product Highlights Floating Control Inputs • Connects directly to INT200 or INT202 HSD outputs • No external level translators or transformers required HV Gate Drive Output for an External MOSFET

IXFL30N120P

Abstract: 1200v18a 30N120P
Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFL30N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 18A Ω 380mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200

Contextual Info: Sample & Buy Product Folder Support & Community Tools & Software Technical Documents LMP8640, LMP8640-Q1, LMP8640HV SNOSB28G – AUGUST 2010 – REVISED NOVEMBER 2014 LMP8640/-Q1/HV Precision High Voltage Current Sense Amplifiers 1 Features 3 Description •