FDC655 Search Results

Contextual Info: FJBE2150D ESBC Rated NPN Silicon Transistor Description ESBC Features FDC655 MOSFET VCS(ON) IC Equiv. RCS(ON) 0.131 V 0.5 A 0.261 Ω(1) The FJBE2150D is a low-cost, high-performance power switch designed to be used in an ESBC™ configuration in applications such as: power supplies, motor drivers,

TE Supersot 6

Abstract: FDC655AN
Contextual Info: FAIRCHILD June 1998 M lC O N D U C T O R FDC655AN Single N-Channel, Logic Level, PowerTrench MOSFET G eneral Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state

Contextual Info: FDC655BN tm Single N-Channel, Logic Level, PowerTrench MOSFET 30 V, 6.3 A, 25 mΩ Features General Description „ Max rDS on = 25 mΩ at VGS = 10 V, ID = 6.3 A This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process

FDC655AN

Abstract: SOIC-16
Contextual Info: June 1998 FDC655AN Single N-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state

Contextual Info: FDC655BN Single N-Channel, Logic Level, PowerTrench MOSFET 30 V, 6.3 A, 25 mΩ Features tm General Description ̈ Max rDS on = 25 mΩ at VGS = 10 V, ID = 6.3 A This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process

Contextual Info: FDC655BN Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimized on-state resistance and yet maintain

Contextual Info: FJP2145 ESBC Rated NPN Power Transistor ESBC Features FDC655 MOSFET • • • • • • • Description VCS(ON) IC Equiv. RCS(ON)(1) 0.21 V 2A 0.105 Ω The FJP2145 is a low-cost, high-performance power switch designed to provide the best performance when

DC394A

Abstract: FDC655AN LT1619 r14 diode UPS120 CR15
Contextual Info: 5 4 3 2 1 Vout3 E11 L3 D D5 10uH Vout E12 UPS120 1 2 5 6 C22 0.1uF Vout3 R13 100K R14 130K 4 6 OUT SEN 5 VFB 2 C16 1uF 16V VC GND 4 1 SS C optional SO8 C19 47uF C R15 0.012 3 7 DRV 8 VIN C21 1uF U3 LT1619 16V Q4 FDC655AN 3 C15 15uF D E13 R17 47K R16 15.0K

FDC655BN

Contextual Info: FDC655BN Single N-Channel, Logic Level, PowerTrench MOSFET Features General Description • 6.3 A, 30 V. RDS ON = 25 mΩ @ VGS = 10 V RDS(ON) = 33 mΩ @ VGS = 4.5 V ■ Fast switching ■ Low gate charge ■ High performance trench technology for extremely low Rdson

TSOP6 MOSFET AVG

Abstract: FDC655AN
Contextual Info: F A I R C H I L D June 1998 S E M IC O N D U C T O R tm FDC655AN Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produceid using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize ion-state

Contextual Info: FJPF2145 ESBC Rated NPN Power Transistor ESBC Features FDC655 MOSFET • • • • • • • Description VCS(ON) IC Equiv. RCS(ON)(1) 0.21 V 2A 0.105 Ω The FJPF2145 is a low-cost, high-performance power switch designed to provide the best performance when

Contextual Info: F A I R C H I L D June 1998 SEM ICONDUCTO R FDC655AN Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state

FDC655AN

Abstract: SOIC-16 mosfet 23 Tsop-6
Contextual Info: FAIRCHILD s e m i c o n d u c t o June 1 998 r FDC655AN Single N-Channel, Logic Level, PowerTrench™ MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state

FDC655AN

Abstract: SOIC-16
Contextual Info: June 1998 FDC655AN Single N-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state

Supersot6

Abstract: Supersot 6 NDC7002N FDC6303N complementary FDC655AN fdc640p FDC6301N FDC6305N FDC637AN
Contextual Info: Discrete MOSFET SuperSOT-6 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) SuperSOT-6 N-Channel FDC6401N 20 Dual - 0.07 0.095 - 3.3 3 0.96 FDC6305N 20 Dual - 0.08 0.12 - 3.5

lpk 12-23

Abstract: ISL97522 ISL97522IRZ-T ISL97522IRZ-TK TB379 3.6v reglator
Contextual Info: ISL97522 Data Sheet December 13, 2006 4-Channel TFT-LCD Supply Features The ISL97522 represents a 4-channel supply control IC for use in large panel TFT-LCD displays. Supporting inputs from 4.5V to 13V, the ISL97522 includes a boost controller to achieve the required AVDD output voltage. Both VON and

Contextual Info: FJAFS1510A ESBCTM Rated NPN Power Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, SMPS, HV Industrial Power Supplies

39T0167

Abstract: U-558 Socket AM2 ADP3205 rome 455D NO10V 1D93 ibm rome BI 335A
Contextual Info: A B C D E F G H J K L M N DATE REL 9 EC NO. 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. 26. 27. 28. 29. 30. 31. 32. 33. 34. 35. 36. 37. 38. 39. 40. 41. 42. 43. 44. 7 6 5 4 3 2 1 TITLE PAGE EC HISTORY CPU 1/3

kbc1070

Abstract: fds8884 AM4825P_AP Entery-3802 ICS9LPRS355 Inventec alcor AU6371 CHENMKO_CHPZ6V2_3P fix40 Socket AM2
Contextual Info: DDD UMA SI Build Final 2007.03.30 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX XXXXXXXXXXXX P/N INVENTEC TITLE VER : DDD UMA SIZE CODE A3 CS SHEET DOC. NUMBER REV Model_No 1 OF AX1 48 TABLE OF CONTENTS

cdb 400E

Abstract: Memsic 2125 PCI4520 ADP3806 C401 class q 607p rome-1 planar 8C546 PMH4 CRYSTAL g 472b
Contextual Info: A B C D E F G H J K L M N DATE 9 APOLLO-9 PLANAR VER 0.60 REL RED RED M9/KINNERETH-R BASE DEC/26/2003 7 6 5 4 3 2 1 13R1151 A TITLE PAGE EC HISTORY CPU(1/3) CPU(2/3) CPU(3/3) ITP CONN VCCCPUCORE DECOUPLING MCH-M(1/4) MCH-M(2/4) MCH-M(3/4) MCH-M(4/4) DDR SO DIMM CONNECTOR 0

RTL8211E

Abstract: Marvell 88E1116R TC7SZ08AFEAPE TLA-6T213HF C5855 88E1116R 57B8 PP3V42 NTC 15D-7 u9701
Contextual Info: 8 6 7 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE M97A MLB SCHEMATIC C 681298 PRODUCTION RELEASED DATE 03/11/09 ? REFERENCED FROM T18 03/11/2009 D .csa Date Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM

EMC4000

Abstract: MEC5004 MEC5004 ECE5018 ECE5018 dell inverter pinout isl6260 pinout dell battery HAL00 nvg72m macallan IV SIO pinout
Contextual Info: A B C D E COMPAL CONFIDENTIAL 1 MODEL NAME : HAL00 PCB NO : LA-2792 COMPAL P/N : 45135731L01 1 Travis DIS Schematics Document 2 2 uFCPGA Mobile Yonah Intel Calistoga + ICH7M 2006-01-20 REV : 1.0 (DELL: A00) 3 3 4 4 DELL CONFIDENTIAL/PROPRIETARY MB PCB Part Number

BD4176KVT

Abstract: cooper ck1 VCC1R05AUX PDTA144E epson c664 vt1311 wistron U57F BD3550 WISTRON power sequence
Contextual Info: Sep.4 Clock Generator MLF68 15 Intel Penryn SV Processor AGTL+ FSB 3,4 DDR3 1067/800 204-PIN DDR3 SODIMM Channel B LVDS DDR3 1067/800 CRT I/F SMBus I2C Bus / SM Bus SATA CONN 30 SATA HDD Bus Switch IC 40 Media Slice 34 DMI x4 Serial ATA I/F Serial ATA I/F

474j capacitor

Abstract: AN12942A bd7 c836 476j 13R1088 radeon R515 692N 2A 473J D20001 596B
Contextual Info: A B C D E F G H J K L M N DATE REL 9 EC NO. 11/21/03 Q 13R1088 J45843A ROME-1 PLANAR M9/KINNERETH-R/WO-ACC BASE VER 0.99 P PART NO. 9 DEVELOPMENT NO. Q/M /82 1 NOV/21/2003 8 8 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22.