COMPLEMENTARY Search Results

2SD1411

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1411 INDUSTRIAL APPLICATIONS Unit in n HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 0 3 .J± Q 2 FEAT U R E S : . Low Saturation Voltage : v CE sat = 0-5V(Max.) at Ic=4A . Complementary to 2SB1018 MAXIMUM RATINGS (Ta=25°C)

2sc1173

Abstract: 2SA473
Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC1173 U n i t 10.3 MAX. POWER AMPLIFIER APPLICATIONS, i tí m m 0 3 .6 ± 0 .2 CAR RADIO, CAR STEREO OUTPUT STAGE AMPLIFIER APPLICATIONS. FEATURES: • Good Linearity of hpE• Complementary to 2SA473 and 5 Watts Output Applications.

2SA1302

Abstract: Toshiba 2Sa1302
Contextual Info: 2SA1302 SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm PO W ER AM PLIFIER APPLICATIONS. • • 20.5M AX. Complementary to 2SC3281 Recommend for 100W High Fidelity Audio Frequency Amplifier Output Stage. 03 .3 ± 0.2 3Í- M A X IM U M RATINGS Ta = 25‘,C SYMBOL

2N5067

Abstract: tl 5069
Contextual Info: T Y P E S 2 N 5 0 6 7 , 2N5068. 2N5069 N-P-N S IN G L E -D IF F U S E D SILICON PO W ER T R A N S IS T O R S TYPES 2N5067, 2N5068, 2N 5069 BULLETIN NO. DL-S 7211663, JANUARY FOR POWER-AMPLIFIER AND SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N4901 THRU 2N4903

2SA1145

Contextual Info: 2SA1145 SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO FREQUENCY AMPLIFIER APPLICATIONS. • • • Complementary to 2SC2705. Small Collector Output Capacitance : C0b = 2.5pF (Typ.) High Transition Frequency : f'r = 200MHz (Typ.) M A X IM U M RATING S (Ta = 25°C)

2SC3297

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1305 POWER AMPLIFIER APPLICATIONS. Unit in mm CAR RADIO AND CAR STEREO OUTPUT STAGE APPLICATIONS. 0 3 .2 ± 0.2 FEATURES: Ytfi . Good Linearity of hpg ^ ♦ Complementary to 2SC3297 MAXIMUM RATINGS Ta=25°C CHARACTERISTIC + 0.25

texas instruments tip32

Abstract: tip 31c til 31a texas instruments tip31 TIP31C
Contextual Info: TYPES TIP31, TIP31A, TIP31B. TIP31C N-P-N SINGLE-DIFFUSED M ESA SILICON POWER TRANSISTORS 3JCDH m C -< FOR POWER-AMPi-IFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH TIP32, TIP32A, TIP32B, TIP32C u r T> r r m > mw J jH • 40 W at 25°C Case Temperature

TDC1005

Abstract: TRW LSI Products
Contextual Info: TDC1005 T ir lfV Serial Shift Register Dual 64-Bit • • • • • The TRW TD C1005 is a dual 64-bit positive-edgetriggered serial shift register which operates at 25M Hz. This device is cascadable in the number of words and the word size. Complementary TTL outputs Q and Q

ic 2113

Contextual Info: RN2112,2113 RN2112 U nit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • 1.6 ± 0.2 03 With. Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and M anufacturing Process Complementary to RN1112, RN1113

2sa1943 toshiba transistor

Contextual Info: 2SA1943 T O S H IB A 2 S A 1 943 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 20.5MAX. • • ^3.3 ±0.2 Complementary to 2SC5200 Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage.

2N5001

Abstract: TCA 875 MW-82 2N5149 2N4999
Contextual Info: TYPES 2N4999. 2N5001, 2N5147, 2N5149 P-N-P SILICON POWER TRANSISTORS H IG H -F R E Q U E N C Y POWER TRAN SISTO RS W ITH CO M PUTER-D ESIG NED IS O TH E R M A L G EO M ETR Y • For Complementary Use With 2N 4998, 2N 5000, 2N 5148, and 2N 5150 • 6 mJ Reverse Energy Rating with lc = 5 A and 4 V Reverse Bias

DA 2688

Abstract: transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688
Contextual Info: TEXAS r ÌNSTR 8961726 TEXAS IN STR 62C OPTO 37004 TIP3055 N-P-N SILICON POWER TRANSISTOR T - 3 3 DECEMBER 1970 - REVISED OCTOBER 1884 Designed for Complementary Use with TIP2955 9 0 W at 2 5 ° C C ase T emperature 15 A Continuous Collector Current Plastic-Case Version of 2N 3055

2SA1301 TOSHIBA

Contextual Info: 2SA1301 SILICON PNP TRIPLE DIFFUSED TYPE U nit in mm PO W ER AM PLIFIER APPLICATIONS. • 2 0 .SM A X . . 0 3 . 3 ± 0 .2 Complementary to 2SC3280 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. í¡- M A X IM U M RATINGS Ta = 25°C

2SC5242

Contextual Info: 2SC5242 SILICON NPN TRIPLE DIFFUSED TYPE U nit in mm POWER AM PLIFIER APPLICATIONS. 15.9MAX. • • • — High Collector Breakdown Voltage : V c g o = 230V Min. Complementary to 2SA1962 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage.

2SB1015

Abstract: IC 4025
Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1015 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. 10.3MAX. FEATURES: . Low Collector Saturation Voltage = VcE sat =-1.7V(Max.) at IC=-3A, IB=-0.3A . Collector Power Dissipation : Pc=25W (Tc=25°C) . Complementary to 2SD1406

2SC3296

Abstract: IC vertical lg
Contextual Info: 2SC3296 SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. Unit in mm VERTICAL OUTPUT APPLICATIONS. 1 Û3MAX. 03.2±Q2 FEATURES: . Wide Safe Operating Area. . Complementary to 2SA1304. 1.2 + 0.2 5 0.76-0-15 MAXIMUM RATINGS Ta=25°C CHARACTERISTIC

Contextual Info: 2SC4793 SILICON NPN EPITAXIAL TYPE POW ER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. • • High Transition Frequency : fr=100M H z Typ. Complementary to 2SA1837 M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD2449 PO W ER AM PLIFIER APPLICATIONS Unit in mm 2 0.SM A X . • High Breakdown Voltage : V q e o = 160V (Min.) • Complementary to 2SB1594 ¿ 3 .3 ± 0 .2 pr y > M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

2SB863

Abstract: 2SD1148
Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SB863 o POWER AMPLIFIER APPLICATIONS. Unit in mm 159 M AX. 0O.2ÌO.2 FEATURES: . Complementary to 2SD1148 . Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25 C CHARACTERISTIC SYMBOL

transistor 2sa968b

Contextual Info: i TOSHIBA TRANSISTOR ZSA96öB SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES: . High Transition Frequency: fx=100MHz (Typ.) . Complementary to 2SC2238B MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC

SRG8

Abstract: 74als165
Contextual Info: TYP ES S N 5 4 A LS 16 S , S N 74 A LS 16 5 P A R A LLE L LO AD 8-BIT SH IFT REGISTERS D 2 6 6 1 , JU N E 1982 Complementary Outputs I• • SN 54A LS 165 . . . J PACKAGE S N 74A LS 165 . . . N PACKAGE Direct Overriding Load Data Inputs (TOP VIEW) Gated Clock Inputs

2sa965

Contextual Info: SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA965 U nit in mm POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. • Complementary to 2SC2235. = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

IC LM 351

Contextual Info: RN2314,2315,2316 RN2317,2318 RN2314 SW ITCHIN G , INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. • W ith Built-in Bias Resistors • Simplify Circuit Design • Reduce a Q uantity of Parts and M anufacturing Process • Complementary to RN1314~RN1318

TC4007UBP

Contextual Info: TP^ fin"#7UDr/ 1IDD/UDl IMDC IU“UU C 2MOS DIGITAL IN T E G R A T E D CIR CU IT S IL IC O N M O N O L IT H IC TC4007UBP/TC4007UBF DUAL COMPLEMENTARY PAIR PLUS INVERTER TC4007UBP/UBF contains three elements of P-channel enhancement type MOS FET and three elements of Nchannel enhancement type MOS FET. One pair of Pchannel and N-channel functions as inverter and