FDC638P Search Results

Marking 638

Contextual Info: FDC638P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain

CBVK741B019

Abstract: F63TNR FDC633N FDC638P SOIC-16
Contextual Info: June 1999 FDC638P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

Contextual Info: November 1998 FDC638P Single P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the

Contextual Info: FDC638P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain

SSOT-6

Abstract: CBVK741B019 F63TNR FDC633N FDC638P
Contextual Info: FDC638P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain

FDC638P

Contextual Info: FDC638P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain

Contextual Info: F /\IR C H II_ D June 1999 M IC D N D U C T D R i FDC638P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

FDC633

Abstract: CBVK741B019 F63TNR FDC633N FDC638P SOIC-16
Contextual Info: June 1999 FDC638P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

6TPA47M

Abstract: R040 FDC638P CAP 0402 P-MOSFET ADC623A 47uF 63v CR05-103JM DO1608C-472 MOSFET sot23-6
Contextual Info: 5 4 3 2 U1 LTC3801ES6 RUN E1 D D Cc1 220pF Rc1 1 Ith/RUN PGATE 6 E2 10K 2 GND VIN Vin 2.5V-9.8V Cin 10uF 10V 5 Rcs 0.040 Rf2 3 FB S- 4 4 80.6K 1% GND 3 E3 Q1 FDC638P Rf1 174K 1% C 1 2 5 6 C 1 Cf1 opt. L1 1 4.7uH Co2 4.7uF 6.3V opt. 2 D1 MBRM120L E4 + Co1 47uF

Supersot6

Abstract: Supersot 6 NDC7002N FDC6303N complementary FDC655AN fdc640p FDC6301N FDC6305N FDC637AN
Contextual Info: Discrete MOSFET SuperSOT-6 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) SuperSOT-6 N-Channel FDC6401N 20 Dual - 0.07 0.095 - 3.3 3 0.96 FDC6305N 20 Dual - 0.08 0.12 - 3.5

T101D103-CA

Abstract: ntc 100-20 K 1358 fet transistor 140-103LAG-RBI T101D103 Fenwal NTC MAX1879 FDC638P MAX1679 MAX1879EUA
Contextual Info: 19-2061; Rev 0; 5/01 ABLE KIT AVAIL N IO T A U L EVA Simple, Efficient, 1-Cell Li+ Pulse Charger Features ♦ Simple Design Minimizes Heat The MAX1879 initiates charging in one of three ways: battery insertion, charger power-up, or toggling the THERM pin. Key safety features include continuous voltage and

FDC638P

Abstract: J-STD-020A MAX1736 MAX1736EUT41 MAX1736EUT41-T MAX1736EUT42 MAX1736EUT42-T MAX1736EVKIT
Contextual Info: 19-1662; Rev 1; 10/00 KIT ATION EVALU E L B AVAILA SOT23, Single-Cell Li+ Battery Charger for Current-Limited Supply _Applications Single-Cell Li+ Portable Applications Wireless Handsets Personal Digital Assistants Digital Cameras Small Hand-Held Equipment

Contextual Info: LTC3736-1 Dual 2-Phase, No RSENSETM, Synchronous Controller with Spread Spectrum FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LTC 3736-1 is a 2-phase dual synchronous stepdown switching regulator controller with tracking that

LTC1772B

Contextual Info: LTC3772B Micropower No RSENSE Constant Frequency Step-Down DC/DC Controller FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LTC 3772B is a constant frequency current mode step-down DC/DC controller in a low profile 8-lead SOT-23

LTC1772B

Contextual Info: LTC3772 Micropower No RSENSE Constant Frequency Step-Down DC/DC Controller FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LTC 3772 is a constant frequency current mode step-down DC/DC controller in a low profile 8-lead SOT-23

Contextual Info: 19-1662; Rev 1; 10/00 KIT ATION EVALU E L B AVAILA SOT23, Single-Cell Li+ Battery Charger for Current-Limited Supply The MAX1736 initiates charging in one of four ways: battery insertion, charger power-up, battery voltage threshold, and by external manipulation of the EN pin.

ICS9LP306

Abstract: Inventec SC7652 KBC1021 Inventec VAIL 2.0 kahuna rqa130n03 1981HD 51117 TP772
Contextual Info: GALLO 1.0 PV BUILD 2006.02.08 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX XXXXXXXXXXXX P/N INVENTEC TITLE VER : GALLO 1.0 SIZE CODE A3 CS SHEET REV DOC. NUMBER Model_No 1 OF A01 58 TABLE OF CONTENTS

6A4 mic DIODE

Abstract: r8201 FERR-250-OHM C5100 MOSFET J8200 BS520EOF XW6800 R8202 R6803 C8207
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 04 426972 ENGINEERING RELEASED DATE

Q8031

Abstract: ISL9504 U7500 SLG8LP436 ISL9504 macbook "board view" macbook 820-1889 c5966 U6200 PP3V42G3H
Contextual Info: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 2 3 4 5 1 CK APPD M42C MLB REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE C 474680 PRODUCTION RELEASED

RTL8211E

Abstract: ISL6258A 88E1116R Marvell 88E1116R ISL6258 RTL8211 L6703 u9701 MCP79-B01 Q7055
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MBP 15"MLB ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ?

Inventec VAIL 2.0

Abstract: PC9603 Inventec INVENTEC davos INVENTEC DAVOS 3.0 GST5009 C5761 Compaq P58 VSS28 CN5-001
Contextual Info: DAVOS-DF PV-1-BUILD 2004.11.04 EE DATE DATE POWER DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX P/N XXXXXXXXXXXX INVENTEC TITLE VER : DAVOS-DF SIZE CODE A3 CS SHEET DOC. NUMBER REV PC9603 1 A01 OF 65 TABLE OF CONTENTS

RT9713

Abstract: C6091 C6093 R61531 c6090 C6085 c6092 inventec vail 1.0 Inventec 070912FR015S200ZU
Contextual Info: VAIL SI2-BUILD-FINAL 2004.08.31 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX P/N XXXXXXXXXXXX INVENTEC TITLE VER : VAIL1.0 SIZE CODE A3 CS SHEET DOC. NUMBER REV Model_No 1 OF AX2 67 TABLE OF CONTENTS

kbc1070

Abstract: fds8884 AM4825P_AP Entery-3802 ICS9LPRS355 Inventec alcor AU6371 CHENMKO_CHPZ6V2_3P fix40 Socket AM2
Contextual Info: DDD UMA SI Build Final 2007.03.30 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX XXXXXXXXXXXX P/N INVENTEC TITLE VER : DDD UMA SIZE CODE A3 CS SHEET DOC. NUMBER REV Model_No 1 OF AX1 48 TABLE OF CONTENTS

ISL9504

Abstract: b6886 PP3V42G3H NVIDIA G84m ISL9504BCRZ C8050 12v p66 apple k50 apple M75 MLB 820-2101 PP3V42
Contextual Info: 8 6 7 2 3 4 5 CK APPD OROYA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 03/20/2007 - DVT