HUF75321D Search Results

Contextual Info: HUF75321D3ST Data Sheet 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Saber

Abstract: 75321D AN7254 AN9321 AN9322 HUF75321D3 HUF75321D3S HUF75321D3ST TA75321 TB334
Contextual Info: HUF75321D3, HUF75321D3S Data Sheet 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Contextual Info: in terd i HUF75321D3, HUF75321D3S Data Sheet 20A, 55V, 0.036 Ohm, N -Channel U ltraFET Power MOSFETs These N-Channel power M O SFETs u m are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

HUF75321D3

Abstract: 75321D AN9321 HUF75321D3S HUF75321D3ST TA75321 TB334
Contextual Info: HUF75321D3, HUF75321D3S Data Sheet 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

75321D

Abstract: d3s diode DIODE D3S 90 430E1
Contextual Info: HUF75321D3, HUF75321D3S Semiconductor Data Sheet June 1999 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

an7254

Abstract: 75321D AN9321 HUF75321D3 HUF75321D3S HUF75321D3ST TA75321 TB334 110E3
Contextual Info: HUF75321D3, HUF75321D3S Data Sheet 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Contextual Info: HUF75321D3ST Data Sheet N-Channel UltraFET Power MOSFET 55 V, 20 A, 36 mΩ These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding

irf540n irf640

Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460
Contextual Info: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S

130E2

Abstract: 75321D AN7254 AN9321 AN9322 HUF75321 HUF75321D3 HUF75321D3S HUF75321D3ST TA75321
Contextual Info: HUF75321D3, HUF75321D3S S E M I C O N D U C T O R 20A, 55V, 0.032 Ohm, N-Channel UltraFET Power MOSFETs August 1997 Features Description • 20A, 55V The HUF75321 N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced

TA75321

Abstract: transistor 75321D 75321D AN9321 HUF75321D3 HUF75321D3S HUF75321D3ST TB334
Contextual Info: HUF75321D3, HUF75321D3S Data Sheet 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

AN7254

Abstract: AN7260 AN9321 AN9322 HUF75321D3ST TA75321 TB334
Contextual Info: HUF75321D3ST Data Sheet 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Contextual Info: HUF75321D3, HUF75321D3S Semiconductor Data Sheet June 1999 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

complementary of irf830

Abstract: IRF630 complementary irf630 irf640 irf540n irf640 IRF640 irf510 IRFP150 Irfp250 irfp460 IRF640 IRFP150N IRF610 complementary
Contextual Info: Power MOSFET Selection Trees TM N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S HUF75321P3 HUF75321S3S HUF75329D3

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

Complementary MOSFETs buz11

Abstract: irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

HUF75307D

Contextual Info: Harris New Low rDS ON MOSFET Products UltraFETTM is a new low voltage, low rDS(ON) MOSFET design and process technology. The UltraFETTM technology provides Harris with world class power MOSFET product performance in several package styles. The UltraFET TM technology

HRF3205 equivalent

Abstract: HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A
Contextual Info: Date Created: 3/29/2004 Date Issued: 4/6/2004 PCN # 20041001-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL Reference FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.

std2n52

Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
Contextual Info: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

BUT11APX equivalent

Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
Contextual Info: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

RFD14N05 spice

Abstract: HUF76343 HRF3205 equivalent HUF75623P3 MOSFET S1A HRF3205 HUF76645P3 RF1K49093 RFP70N06 HRF3205S
Contextual Info: Power MOSFET SPICE and Thermal Models Power MOSFET Products Features • • • • Sub Circuit Approach Full Operating Temperature Range Accurate Gate Charge Modeling BVDSS Modeling at Low and High Currents • • • Package Inductances Gate Source Resistance

IGBT DRIVER ignition coil automotive

Abstract: mosfet to ignition coil HGT1S14N40G3VLS HUF76639 N-channel MOSFET to-247 50a TO-252 N-channel power MOSFET HGTP14N45G3VL ignition IGBTS 60V 60A TO-252 N-CHANNEL 60V 60A TO-252
Contextual Info: 107730 Auto Line Card_PW 8/24/00 7:48 PM Page 1 www.intersil.com Automotive Discrete Power Products UltraFET MOSFETs and IGBTs enhance the peak performance of automotive systems in the 21st century Intersil is proud to continue introducing exciting new families of

IRF540 complementary

Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
Contextual Info: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3

rh-24v

Abstract: JESD22-A105 a105 transistor HUF75309D3ST HRF3205 equivalent JESD22-A110 RFD3055LESM9A rfp70n06 transistor a105 100C
Contextual Info: Date Created: 2/24/2004 Date Issued: 4/8/2004 PCN # 20040802 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will