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    75321D Search Results

    75321D Datasheets (1)

    Fairchild Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    75321D
    Fairchild Semiconductor 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs Original PDF 227.63KB 10
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    75321D Price and Stock

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    Carling Technologies BA2-B0-42-475-321-D

    Hydraulic-magnetic circuit breaker with handle actuator 2-pole configuration 7.5A current rating AC medium delay with high-inrush capability and screw terminal connections.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics BA2-B0-42-475-321-D
    • 1 $78.24
    • 10 $67.73
    • 100 $48.56
    • 1000 $47.92
    • 10000 $47.92
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    Sager BA2-B0-42-475-321-D 1
    • 1 $79.89
    • 10 $73.67
    • 100 $57.88
    • 1000 $57.88
    • 10000 $57.88
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    onsemi HUF75321D3ST

    N-Channel UltraFET Power MOSFET 55V 20A 36mΩ
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    Master Electronics HUF75321D3ST
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    • 1000 $0.59
    • 10000 $0.41
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    Avnet Americas () HUF75321D3ST Tape & Reel 2,500
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    • 10000 $0.25
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    HUF75321D3ST Tape & Reel 26 Weeks 2,500
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    • 10000 $0.35
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    Newark HUF75321D3ST Tape & Reel 2,500
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    Rochester Electronics HUF75321D3ST 10,982 1
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    • 1000 $0.41
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    TME HUF75321D3ST 2,500
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    • 10000 $0.47
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    Richardson RFPD HUF75321D3ST 2,500
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    Avnet Silica HUF75321D3ST 27 Weeks 2,500
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    EBV Elektronik HUF75321D3ST 28 Weeks 2,500
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    Flip Electronics HUF75321D3ST 2,812
    • 1 $0.21
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    • 100 $0.21
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    Carling Technologies BB2-B0-46-475-321-D

    Hydraulic-magnetic circuit breaker with handle actuator 2-pole configuration 7.5A current rating AC long high-inrush delay and screw terminal connections.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics BB2-B0-46-475-321-D
    • 1 $78.24
    • 10 $67.73
    • 100 $48.56
    • 1000 $47.92
    • 10000 $47.92
    Buy Now
    Sager BB2-B0-46-475-321-D 1
    • 1 $79.89
    • 10 $73.67
    • 100 $57.88
    • 1000 $57.88
    • 10000 $57.88
    Buy Now

    onsemi HUF75321D3S

    - Rail/Tube (Alt: HUF75321D3S)
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    Avnet Americas HUF75321D3S Tube
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    Ameya Holding Limited HUF75321D3S 2,130
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    Carling Technologies BB2-B0-46-475-121-D (BB2B046475321D | BB2-B0-46-475-321-D | BB2B046475321D)

    CIRCUIT BREAKER, B-SERIES, HYDRAULIC-MAGNETIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS BB2-B0-46-475-121-D (BB2B046475321D | BB2-B0-46-475-321-D | BB2B046475321D) Bulk 10 Weeks 10
    • 1 -
    • 10 $86.99
    • 100 $86.99
    • 1000 $86.99
    • 10000 $86.99
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    75321D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Saber

    Abstract: 75321D AN7254 AN9321 AN9322 HUF75321D3 HUF75321D3S HUF75321D3ST TA75321 TB334
    Contextual Info: 75321D3, 75321D3S Data Sheet 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    huf75321d3huf75321d3ssaber75321d+6an7254an9321an9322huf75321d3stta75321tb334 PDF

    mosfet 4942

    Contextual Info: 75321D3, 75321D3S TM Data Sheet 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    hufa75321d3hufa75321d3smosfet 4942 PDF

    Contextual Info: in terd i 75321D3, 75321D3S Data Sheet 20A, 55V, 0.036 Ohm, N -Channel U ltraFET Power MOSFETs These N-Channel power M O SFETs u m are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan
    huf75321d3huf75321d3san7254an7260 PDF

    HUF75321D3

    Abstract: 75321D AN9321 HUF75321D3S HUF75321D3ST TA75321 TB334
    Contextual Info: 75321D3, 75321D3S Data Sheet 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    huf75321d3huf75321d3s49e-161e-2+10huf75321d10e-372e-267e-230e-175321dan9321huf75321d3stta75321tb334 PDF

    75321D

    Abstract: d3s diode DIODE D3S 90 430E1
    Contextual Info: 75321D3, 75321D3S Semiconductor Data Sheet June 1999 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan
    huf75321d3huf75321d3sta7532272e-2+967e-230e-149e-1huf75321d10e-375321dd3s diodediode d3s 90430e1 PDF

    an7254

    Abstract: 75321D AN9321 HUF75321D3 HUF75321D3S HUF75321D3ST TA75321 TB334 110E3
    Contextual Info: 75321D3, 75321D3S Data Sheet 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    huf75321d3huf75321d3san725475321d+5an9321huf75321d3stta75321tb334110e3 PDF

    Contextual Info: 75321D3ST_F085 Data Sheet April 2013 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs Features • 20A, 55V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    hufa75321d3st PDF

    130E2

    Abstract: 75321D AN7254 AN9321 AN9322 HUF75321 HUF75321D3 HUF75321D3S HUF75321D3ST TA75321
    Contextual Info: 75321D3, 75321D3S S E M I C O N D U C T O R 20A, 55V, 0.032 Ohm, N-Channel UltraFET Power MOSFETs August 1997 Features Description • 20A, 55V The HUF75321 N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced


    Original
    huf75321d3huf75321d3shuf753211-800-4-harris+7130e275321dan7254an9321an9322huf75321d3stta75321 PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original
    1-888-intersilms-012aamo-153aarf1k49090+16rf1k49093rf1k49092itf87056dqtitf87072dk8titf87008dqtrf1k4922365e9 transistortransistor 75307dtransistor 65e8sd mosfet drive datasheet 4468 8 ping40n60rhr15120 equivalent10n120bnd76107dtransistor 76121demerson three phase dc motor driver service note PDF

    TA75321

    Abstract: transistor 75321D 75321D AN9321 HUF75321D3 HUF75321D3S HUF75321D3ST TB334
    Contextual Info: 75321D3, 75321D3S Data Sheet 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    huf75321d3huf75321d3sta75321transistor 75321d+475321dan9321huf75321d3sttb334 PDF

    transistor 75321D

    Abstract: 75321D HUFA75321D3 HUFA75321D3S HUFA75321D3ST TA75321 TB334 321d relay
    Contextual Info: 75321D3, 75321D3S Data Sheet 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs Title UFA 321D UFA7 21D3 bjec 20A, V, 36 m, These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    Original
    hufa75321d3hufa75321d3stransistor 75321d75321d+4hufa75321d3stta75321tb334321d relay PDF

    HUFA75321D3S

    Abstract: HUFA75321D3ST TA75321 TB334 75321D HUFA75321D3
    Contextual Info: 75321D3, 75321D3S Data Sheet 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    hufa75321d3hufa75321d3shufa75321d3stta75321+2tb33475321d PDF