HM51100 Search Results

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256

HM511001-12

Abstract: HM511001
Contextual Info: H M 511001 S e r ie s 1048576-word x 1-bit CMOS Dynamic Random Access Memory The Hitachi HM511001 Series is a CMOS dynamic RAM organized 1,048,576-word x 1-bit. HM511001 has realized higher density, higher performance and various functions by employing 1.3jum CMOS process technology and some new CMOS circuit

HB56A19A-12

Abstract: HB56A19A7L
Contextual Info: HB56A19L Series 1,048,576-W ord x 9-B it High Density Dynam ic RAM M odule • PIN O U T ■ D ESCRIPTIO N The HB56A19 is a 1M x 9 dynamic RAM module, mount­ ed nine 1 Mbit DRAM HM511000ALJP sealed in SOJ pack­ age. An outline of the HB56A19 is 30-pin single in-line pack­

HB56A19B

Contextual Info: HB56A19 Series-1,048,576-words x 9 bits High Density Dynamic R A M Module The H B 5 6A 19 is a 1M x 9 dynamic R A M module, mounted 9 pieces of 1-Mbit D R A M HM511000JP sealed in SO J package. A n outline of the H B56A 19 is 30-pin single-in-line package having

HB56D136

Abstract: hb56d136bv-7b
Contextual Info: HB56D136 Series 1,048,576-word x 36-bit High Density Dynamic RAM Module The HB56D136 is a 1M × 36 dynamic RAM module, mounted 8 pieces of 4-Mbit DRAM HM514400BS/BLS sealed in SOJ package and 4 pieces of 1-Mbit DRAM (HM511000AJP/ALJP) sealed in SOJ package. An outline of the

Contextual Info: HM511000ALP/ALJP/ALZP-8/10/12 •Preliminary 1,048,576-Word x 1-Bit Dynamic Random Access Memory ■ DESCRIPTION The Hitachi HM511000ALP/ALJP/ALZP family is a CMOS dy­ namic RAM organized 1,048,576 word x 1-bit. HM511000ALP/ ALJP/ALZP has realized higher density, higher performance and

Contextual Info: HB56G19 Series 1,048,576-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The HB56G19 is a 1M x 9 dynamic RAM module, mount­ ed two 4 Mbit DRAM HM514400AS sealed in SOJ package and 1 Mbit DRAM (HM511000AJP) sealed in SOJ package.

Contextual Info: HB56C18 S eries-1,048,576-Word x 8-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN DESCRIPTION The HB56C1B is a 1M x 8 static column mode dynamic RAM module, mounted eight 1-Mbit DRAM HM511002JP sealed in SOJ package. An outline of the

HM511000P

Abstract: HM511000P12S HM511000 HM511000ZP-10S HM511000-12
Contextual Info: -Preliminary HM511000S Serles 1048576-word x 1-bit CMOS Dynamic Random Access Memory The Hitachi HM511000S series is a CMOS dynamic RAM or­ ganized 1048576-word x 1-bit. HM511000S has realized higher density, higher performance and various functions by employing

Contextual Info: HB56A19A/AT/B-6H/7H/8A/10A/12A 1,048,576-Word x 9-Bit High Density Dynamic RAM Module P in N o . • DESCRIPTION The HB56A19 is a 1M x 9 dynamic RAM module, mounted nine 1-Mbit DRAM HM511000JP sealed in SOJ package. An outline of the HB56A19 is 30-pin single in-line package having Lead types

HM511001AP-12

Abstract: 511001AP
Contextual Info: HM511001A Series 1,048,576-Word x 1-Bit CMOS Dynamic RAM • DESCRIPTION HM 511001AP Series The H itachi H M 51 1 0 01 A series is a C M OS dynam ic R AM organized 1,048,576w ord x 1-bit. H M 51 1001A has realized higher density, higher p erform ance and vari­

HM511000AJP7

Abstract: HM511000 HM511000AJP-7 dynamic ram 8 bit hm511000 HM511000AJP8 DP-18C HM511000AZP-8 HM511000A Hitachi Scans-001 HM511000AP-7
Contextual Info: H M 5 1 1 0 0 0 A S e rie s H M 5 1 1 0 0 0 A L ~ S e rie s 1048576-Word x 1-Bit CMOS Dynamic RAM H M 511000A /A L P Series • DESCRIPTION The Hitachi HM511000A/AL series is a CMOS dynamic RAM organized 1048576-word x 1-bit. HM511000A/AL has realized higher density, higher perform­

CSR 8811

Abstract: HM511001AP6 HM511001 HM511001ajp
Contextual Info: H M 5 1 1 0 0 1 A S e r ie s 1,048,576-Word x 1-Bit CMOS Dynamic RAMI • DESCRIPTION H M 511001A P Series The Hitachi HM511001A series is a CMOS dynamic RAM organized 1,048,576word x 1-bit. HM511001A has realized higher density, higher performance and vari­

HM511000

Abstract: hb56g19b-7
Contextual Info: HB56G19A/B Series Maintenance only 1,048,576-word x 9-bit High Density Dynamic RAM Module The HB56G19 is a 1M × 9 dynamic RAM module, mounted two 4-Mbit DRAM HM514400BS/BLS sealed in SOJ package and 1 Mbit DRAM (HM511000 AJP/ALJP) sealed in SOJ package. An outline of the HB56G19 is 30pin single in-line package. Therefore, the

Contextual Info: HB56D136B Series 1,048,576-Word x 36-Bit High Density Dynamic RAM Module I • DESCRIPTION PIN OUT The HB56D136B is a 1M x 36 dynamic RAM module, mounted 8 pieces of 4 Mbit DRAM HM514400JP sealed in SOJ package and 4 pieces of 1 Mbit DRAM (HM511000AJP) sealed in SOJ package. An outline of the

Contextual Info: HB56A18 Series 1,048,576 words x 8 bits High Density Dynamic RAM Module The HB56A18 is a 1M x 8 dynamic RAM module, mounted 8 pieces of 1M-bit DRAM HM511000JP sealed in SO J package. An outline of the HB56A18 is 30-pin single-in-line package having two types; Lead type (HB56A18A) and Socket type (HB56A18B).

we221

Contextual Info: H B 5 6 C 1 9 A /A T /B - 8 A /1 0 A /1 2 A 1,048,576-Word x 9-Bit High Density Dynamic RAM Module Pin No. • DESCRIPTION The HB56C19 is a 1M x 9 static column mode dynamic RAM module, mounted nine 1-Mbit DRAM HM511002JP sealed in SOJ package. An outline of the HB56C19 is 30-pin single in-line package

hb56g19b

Contextual Info: HB56G19 S e rie s -1,048,576-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The H B56G19 is a 1M x 9 dynamic R A M module, mount­ ed two 4 Mbit D R A M HM514400AS sealed in S O J package and 1 Mbit DRAM (HM511000AJP) sealed in S O J package.

ZP20N

Contextual Info: HM511001S Series 1048576-word x 1 -bit C M O S Dynamic R A M T he H ita c h i H M 5 1 1 0 0 1 S series is a C M O S d y n a m ic R A M org a nize d 1 0 4 8 5 7 6 -w o rd x 1 -bit. H M 5 1 1 0 0 1 S has rea lized higher H M 511001SP Series d e n sity , higher p e rfo rm a n ce and v ariou s fu n c tio n s b y e m p lo y in g

511000a

Contextual Info: HM511000ALP/ALJP/ALZP-8/10/12 — Preliminary 1,048,576-Word x 1-Bit Dynamic Random Access Memory • DESCRIPTION The Hitachi HM511000ALP/AUP/ALZP family is a CMOS dy­ namic RAM organized 1,048,576 word x 1-bit. HM511000ALP/ ALJP/ALZP has realized higher density, higher performance and

Contextual Info: HM511001A Series 1048576-word x 1-bit C M O S Dynamic R A M The Hitachi H M 5 1 1 0 0 1 A series is a C M O S dynam ic R A M organized 1048576-word x 1-bit. HM511001A has realized higher density, higher performance and various functions by em ploying 1.3 gm C M O S process technology and some new

Contextual Info: HB56D136B-8/10/12 36-Bit DRAM 1,048,576-Word RAM Module x 36-Bit High Density Dynamic • PIN OUT ■ DESCRIPTION The HB56D136B is a 1M x 36 dynamic RAM module, mounted 6 pieces of 4Mbit DRAM HM514400JP sealed in SOJ package and 4 pieces of 1Mbit DRAM (HM511000AJP) sealed in SOJ package. An

M511000A

Abstract: M511000 511000A HM511000AJP-7 HM511000AP-12 511000 cmos M5110 HM511000AJP7 M51100 511000AJ
Contextual Info: HM511000A Series ~ HM511000AL Series 1048576-Word x 1-Bit CMOS Dynamic RAM H M 511000A/ALP Series • DESCRIPTION The Hitachi HM511000A/AL series is a CMOS dynamic RAM organized 1048576-word x 1-bit. HM511000A/AL has realized higher density, higher perform­

HM511000

Contextual Info: HB56A19L S eries-1,048,576-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The HB56A19 is a 1M x 9 dynamic RAM module, mount­ ed nine 1 Mbit DRAM HM511000ALJP sealed in SOJ pack­ age. An outline of the HB56A19 is 30-pin single in-line pack­