HJR 7 200 Search Results

MG200H1AL2

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG200H1AL2 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode. . High DC Current Gain : hjr|7=80 Min. (Ic=200A) . Low Saturation Voltage

2SD2131

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2131 DARLINGTON POWER HIGH POWER SWITCHING APPLICATIONS. Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. 10±0.3 . High DC Current Gain #3.2 ±0.2 : hjr]7=2000(Min.) (Vc e =3V, Ic“ 3A) . Low Saturation Voltage: VpE(sat)= 1 •5V(Max.)(Ip=3A)

Contextual Info: TO SH IB A 2SC2710 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS n r ? MT 7 m i n m w FOR AUDIO AMPLIFIER APPLICATIONS • High DC C urrent Gain : • Complementary to 2SA1150 U nit in mm 4.2MAX. hjr>E(l)-100~320 0.55MAX. MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: SN74AUP1G58 www.ti.com SCES504J – NOVEMBER 2003 – REVISED MARCH 2010 LOW-POWER CONFIGURABLE MULTIPLE-FUNCTION GATE Check for Samples: SN74AUP1G58 FEATURES 1 • • • • • • • Available in the Texas Instruments NanoStar Packages Low Static-Power Consumption

Contextual Info: SN74AUP1G58 www.ti.com SCES504J – NOVEMBER 2003 – REVISED MARCH 2010 LOW-POWER CONFIGURABLE MULTIPLE-FUNCTION GATE Check for Samples: SN74AUP1G58 FEATURES 1 • • • • • • • Available in the Texas Instruments NanoStar Packages Low Static-Power Consumption

Contextual Info: SN74AUP1G58 www.ti.com SCES504J – NOVEMBER 2003 – REVISED MARCH 2010 LOW-POWER CONFIGURABLE MULTIPLE-FUNCTION GATE Check for Samples: SN74AUP1G58 FEATURES 1 • • • • • • • Available in the Texas Instruments NanoStar Packages Low Static-Power Consumption

Contextual Info: ÄREV.f t Z8Z.90 L PS ’ ON ONIMVUa -è#fflS %-n b DATE DON NO. 2 23. 0ot. 2006 061405 3 30. Oc t . 2006 061457 M fl S W. $ a üé CHK. T.TSUJ I m DESCRIPTION A D D I N G P R O D U C T N A ME AND G A T E P OS I T I ON ERROR C O R R E C T IO N DR. M #

Contextual Info: LED LENS CAPS & HOLDERS LED LENS CAPS HJR AMO I- Designed for use with T-1 or T-1 3/4 LEDs, these Lens Caps are available in round or square configurations. They snap-mount through the front panel for easy, light-finger pressure, installation. The LED is inserted into the cap from

2SC5266

Abstract: 2SC5266A
Contextual Info: TOSHIBA 2SC5266A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5266A Unit in mm SWITCHING REGULATOR APPLICATIONS 10 ± 0.2 HIGH VOLTAGE SWITCHING APPLICATIONS 1 01.2 DC-DC CONVERTER APPLICATIONS • • • Excellent Switching Times : tr = 0.5/^s Max. , tf= 0.3/^s (Max.)

marking HJR

Contextual Info: TOSHIBA 2SA1618 TOSHIBA TRANSISTOR SILICON PNP EPITAXIALTYPE PCT PROCESS 2 S A 1 618 U n it in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. + 0.2 2.8 -0 .3 • S m all Package (D u al Type) • H ig h Voltage and H ig h C urrent - v C EO = - 5 0 V , Iq = -1 5 0 m A (M ax ,)

Contextual Info: 2SA1587 TOSHIBA 2 S A 1 587 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • • High Voltage : V q e O “ - 120V Excellent hpE Linearity : hpE (Iq = —0.1mA) / hjr^ (Iç = —2mA) = 0.95 (Typ.)

2SD685

Abstract: AC73 L 10mH
Contextual Info: TOSHIBA {DISCRETE/OPT039097250 TOSHIBA ~Sh <D I S C R E T E / O P T O D e | *1M7ESD 0007757 1 ~"'~5bU_ 0 7 7 5 7 " T-33 -29 S IL IC O N NPN T R IP L E D IF F U SE D TYPE D A R LIN G T O N POWER) INDUSTRIAL APPLICATIONS Unit in mm IGNITER APPLICATIONS. HIGH VOLTAGE AND.HIGH POWER SWITCHING APPLICATIONS.

Contextual Info: MP4013 TOSHIBA TOSHIBA PO W ER TRANSISTOR M ODULE SILICON NPN EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 MP401 3 HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD INDUSTRIAL APPLICATIONS Unit in mm SWITCHING.

Contextual Info: TOSHIBA MP4021 TOSHIBA PO W ER TRANSISTOR M ODULE SILICON NPN EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 MP4021 HIGH PO W ER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS U nit in mm H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING.

FT DARLINGTON TRANSISTOR

Contextual Info: TOSHIBA 2SD1509 ?<:ni >;nq TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE DARLINGTON MICRO MOTOR DRIVE, H AM M ER DRIVE APPLICATIONS Unit in mm SWITCHING APPLICATIONS • • High DC Current Gain : hjr^ —2000 (Min.) Low Saturation Voltage . , . _ • v u ü isat; - '

Contextual Info: Ordering number: E N 4655 _ No.4655 FP104 TR : PNP Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode DC/DC Converter Applications I F e a tu re s - Composite type with 2 devices PNP transistor and Schottky barrier diode contained in one package,

Contextual Info: MP4020 T O SH IB A TOSHIBA PO W ER TRANSISTOR M ODULE SILICON NPN EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 MP4020 INDUSTRIAL APPLICATIONS Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING.

SI2100

Abstract: D413 D-414 D414
Contextual Info: Bulletin 125198/A International l i i Rectifier s t 2io o c .r s e r ie s PHASE CONTROL THYRISTORS Hockey Puk Version Features 2090A • Double side cooling ■ High surge capability ■ High m ean current ■ Fatigue free Typical Applications ■ DC m otor controls

SK 43

Contextual Info: /SO-9001 CERTIFIED BY DESC M .S .K E N N E D Y CORP. 20 AMP, 200 VOLT M O S F E T S M A R T PO W ER 3-PH A SE M O T O R D R IV E PO W ER H Y B R ID /IQ Q *1 ^ T O ^ ì 8170 Thompson Road Cícera N.Y. 13039 315 699-9201 FEATURES: * * * * * * * I MIL-STD-1772 CERTIFIED

IAEJE

Abstract: 6di30z
Contextual Info: 6DI30Z-120 30A / <7 - & D . — JU outi ine Drawings • POWER TRANSISTOR MODULE H _ 14 «Q 1 4 .4 4 . -, y : F e a tu re s • ?Ü i/± • 7')- O J j •üIeü High Voltage yy 4 * - sjw u > • A S O A 'lix L ' k % M k, i k iK J ■ «jt Including Free W heeling Diode

uA 726 HC

Contextual Info: TC74HC4066AP/AF/AFN QUAD BILATERAL SWITCH T he TC74HC4066A is a high speed CMOS Q U A D B IL A T E R A L SW ITC H fabricated with silicon g ate C2MOS technology. It consists of four in dependent high speed switches capable of co n tro llin g eith er d ig ital or an a lo g s ig n a ls

Contextual Info: HM62W8511HI Series 4M High Speed SRAM 512-kword x 8-bit HITACHI ADE-203-1036A(Z) Rev. 1.0 Apr. 15, 1999 Description The HM62W8511HI is a 4-M bit high speed static RAM organized 512-kword x 8-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed

hjr 1-2

Contextual Info: A N A LO G D E V IC E S Dual Low Bias Current Precision Operational Amplifier □ 0P297 FEATURES Precision Performance in Standard SO-8 Pinout Low Offset Voltage: 50 iV max Low Offset Voltage Drift: 0.6 |iV /°C max V ery Low Bias Current: +25°C (100 pA maxi

Contextual Info: HM62W16255HI Series 4M High Speed SRAM 256-kword x 16-bit HITACHI ADE-203-1038A (Z) Rev. 1.0 Apr. 15, 1999 Description The HM62W 16255HI is a 4-M bit high speed static RAM organized 256-kword x 16-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed