150X150X Search Results

Contextual Info: TOSHIBA {DISCRETE/OPT0> Sb 9097250 TOSHIBA <DISCRETE/OPTO DE J T O ^ S S O 56C 07351 DDD73S1 C 7"- $ 3 - 2SB753 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS) INDUSTRIAL APPLICATIONS Unit in nun HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS.

TRANSISTOR 132-gd

Abstract: TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes
Contextual Info: Vergleichsliste Halbleiter Bauelemente In h a lt: Einleitung Typenbezeichnung und Form elzeichen G e g e n ü b e r s t e ll u n g n a c h A l p h a b e t : T ransistoren G leichrichterdioden Leistungs-Zenerdioden V e rg le ic h nach T y p e n g ru p p e n

2SD234

Abstract: 2SD235 2SD235 Toshiba 2so234 SD235 2SD2354 2SB434 2SB435 transistor 2sd234 8bb4
Contextual Info: r SILICON NPN DIFFUSED JUNCTION TRANSISTOR o • • 2 s d 234 À 2 s d 235 U n it in mm Audio Power A m p l if i e r A p p l i c a t i o n s ; V CE sat = Q 8 V 1 0 .3 M A X . # 3 ,6 ± a 3 ( T yp .) d c = l A ) 2SD235 ^ : P c = 3 5 w (To = 3 5 ^ ) 3^9 2 S B 4 34 , Z S B i 35 t ^ 7') t

18VDC

Contextual Info: 10A, 15A, 20A type High capacity SSR, both tab and screw terminals available AQ-R (30A, 40A type) AQ-R RELAYS FEATURES APPLICATIONS 1. Two types of terminal shape: Plug-in terminal and Screw terminal (30 A, 40 A is screw terminal types only) 2. Flat type of SSR possible by

STR20005

Abstract: STR20000 Series RU3M STR20000 sanken str 45
Contextual Info: STR20000 Series Switching Type Chopper • Self Oscillation Type Features ● ● ● ● ● Requires only 4 external components Small size and high efficiency Low switching noise Variable output voltage Use of Sanken semiconductors components ensures high reliability

bp810

Abstract: BP8-04 BP8-005 BP8-01 BP8-02 BP8-06 BP8-08 BP8-10
Contextual Info: BP8-005 THRU BP8-10 FRONTIER ELECTRONICS CO., LTD. 8A BRIDGE RECTIFIER 0.290 7.37 0.210(5.33) FEATURES ! PLACTIC MATERIAL USED CARRIERS UNDERWRITERS LABORATORY FLAMMABILITY RECOGNITION 94V-0 ! TYPICAL IR LESS THAN 1µA ! HIGH SURGE CURRENT CAPABILITY ! LOW FORWARD VOLTAGE DROP

STR2012

Abstract: STR2005 STR2024 Sanken str2012 STR2013 str2000 series sanken STR2005 STR2000 Sanken str2015
Contextual Info: STR2000 Series Switching Type Chopper • Self Oscillation Type Features ● ● ● ● ● Requires only 3 external components Small size and high efficiency Low switching noise Variable output voltage Use of SANKEN's semiconductor elements ensures high reliability

2SD553

Abstract: Toshiba 2sd553
Contextual Info: TOSHIBA 2SD553 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD553 HIGH CURRENT SWITCHING APPLICATIONS PO W ER A M PLIFIER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX Low Saturation Voltage : V q ^ sat “ 0.4V (Max.) (at Complementary to 2SB553.

Contextual Info: Mini Float Level Switch visit our website PRODUCT INTRODUCTION 4 INTRODUCTION 4 WORKING PRINCIPLE The reed switch relies on two basic scientific principles namely: buoyancy and magnetism. Buoyancy causes the float which contains a magnet to rise with the liquid and magnetism

Contextual Info: Magnetic Float Level Switch visit our website INTRODUCTION PRINCIPLE The single unit or multiple reed switch units are housed tightly in stainless steel or engineering plastic stem, and the permanent magnet is sealed into the middle of the specified float

2SA1668

Abstract: 2SA1667 equivalent for 2sa1668 FM20
Contextual Info: 2SA1667/1668 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4381/4382 VCB= VEBO –6 V IEBO IC –2 A V(BR)CEO –10max –10max µA –150 –200 V µA –10max VEB=–6V –150min IC=–25mA –200min –1 A hFE VCE=–10V, IC=–0.7A 60min

transistor IGBT 30004

Abstract: Transistor 30004 SCI0251700 Transistor 30004 to 3 B-2509 WF070000
Contextual Info: celduc r e l a i S/CON/SCI0251700/B/25/09/08 s PRELIMINARY DATA Page 1/5 UK IGBT BASED DC SOLID-STATE RELAY SCI0251700 u Latest high voltage IGBT technology generation. u New innovative isolated driver ensuring fast power transistor turn on and off therefore low power transient.

2SD2141

Abstract: 2SD2141 equivalent FM20 DMS-10
Contextual Info: Equivalent circuit 2SD2141 Silicon NPN Triple Diffused Planar Transistor V ICBO VCEO 380±50 V IEBO VEBO 6 V V BR CEO 6(Pulse10) A hFE IC Symbol Conditions VCB=330V 10max µA VEB=6V 20max mA IC=25mA 330 to 430 V 1500min VCE=2V, IC=3A 1 A VCE(sat) IC=4A, IB=20mA

l8730

Abstract: 109p0424h7 9wf0624h701 San "Ace 92" 109E17 9GV0412P3 9CRA0412G501 SDT 1000 thermistor 109p0624h 109R1212H1D01
Contextual Info: •DC San Ace DC COOLING FAN DC COOLING FAN ■ Precautions For Adoption Cautions ■precautions on the right may cause Failure to follow the moderate injury and property damage, or in some Sanyo Denki's ECO PRODUCTS are designed with the concept of lessening impact on the environment in the process from product development to waste.The product units

Contextual Info: 2SC2023 Silicon NPN Triple Diffused Planar Transistor mA V IEBO VEB=6V 1.0max mA 6 V V BR CEO IC=25mA 300min V 2 A hFE VCE=4V, IC=0.5A 30min IB 0.2 A VCE(sat) IC=1.0A, IB=0.2A 1.0max V PC 40(Tc=25°C) W fT VCE=12A, IE=–0.2A 10typ MHz Tj 150 °C COB VCB=10V, f=1MHz

sata 2.5 hdd

Abstract: US15W DDR2 Mechanical Dimensions sata 2,5 hdd
Contextual Info: WEBS-2121 Embedded fan-less system with Intel AtomTM Processor based NANO-ITX board FEATURES Intel® AtomTM processor Z510/Z530 and System Controller Hub US15W ���� Ultra low power and Fan-less design One 200-Pin SO-DIMM supports DDR2 SDRAM up to 2GB

2SA1667

Abstract: 2SA1668 FM20 22SA1
Contextual Info: 2SA1667/1668 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4381/4382 Symbol 2SA1667 2SA1668 Unit •Electrical Characteristics (Ta=25°C) Conditions Symbol 2SA1667 2SA1668 Unit –10max –10max µA –150 –200 External Dimensions FM20 (TO220F)

2sc4024

Abstract: VEBO-15V M.P transistor FM20
Contextual Info: 2SC4024 High hFE LOW VCE sat Silicon NPN Epitaxial Planar Transistor ICBO VCEO 50 V VEBO 15 V IC 10 A hFE IB 3 A VCE(sat) PC 35(Tc=25°C) W fT Tj 150 °C COB VCB=10V, f=1MHz –55 to +150 °C 10.1±0.2 VCB=100V 10max µA IEBO VEB=15V 10max µA V(BR)CEO IC=25mA

2SD2014

Abstract: 2SB1257 FM20
Contextual Info: 2SD2014 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1257 ICBO VCEO 80 V IEBO VEBO 6 V V(BR)CEO IC 4 A hFE VCE=2V, IC=3A 2000min Conditions Unit VCB=120V 10max µA VEB=6V 10max mA IC=10mA 80min V 10.1±0.2 IB 0.5 A VCE(sat) IC=3A, IB=3mA

2SD2141 equivalent

Abstract: 2SD2141 FM20 DMS-10
Contextual Info: Equivalent circuit 2SD2141 Silicon NPN Triple Diffused Planar Transistor ICBO VCEO 380±50 V IEBO VEBO 6 V V BR CEO 6(Pulse10) A hFE IC Symbol Conditions VCB=330V 10max µA VEB=6V 20max mA IC=25mA 330 to 430 V 1500min VCE=2V, IC=3A 1 A VCE(sat) IC=4A, IB=20mA

2SC4153

Abstract: 2SC4153 equivalent FM20 100X100X2
Contextual Info: 2SC4153 Silicon NPN Triple Diffused Planar Transistor Switchihg Transistor µA 120min V hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.5A 30typ MHz °C

Customization

Contextual Info: Intelligent Fan-less Embedded Solutions Brick Concept As well as stable quality requirements, users are always looking for a unique product to differenciate them from their competitors. To simplify system customization, Portwell created the Brick concept, an intelligent structure for the WEBS

AQJ119V

Abstract: YG6111 3ssr AQJ112V AQJ112VY AQJ116V AQJ119VY AQJ212V AQJ216V AQJ219V
Contextual Info: ソリッドステートリレー AQ-J RoHS対応 強化絶縁規格取得（60950-1） 小型タブ端子SSR。スリム放熱器一体型もラインアップ。 特 長 ●小型サイズW28xL38×H30mm ●外来サージ吸収に優れるバリスタ内蔵付をご用意

ssr schematic circuit

Abstract: 18V dc relay AQR10A2-S-Z4/6VDC AQR15A2-ZV18/28VDC 18VDC Z4 diode 28v solid state relay AQR20A2-S-Z18/28VDC AQR40A2-S-Z18/28VDC motor 28v dc
Contextual Info: 10A, 15A, 20A type AQ-R SOLID STATE RELAY (30A, 40A type) UL C-UL VDE Pending Pending Pending AQ-R RELAYS FEATURES APPLICATIONS 1. Two types of terminal shape: Plug-in terminal and Screw terminal (30 A, 40 A is screw terminal types only) 2. Flat type of SSR possible by