HJR 1 Search Results

HJR-3FF-12VDC-S-Z

Abstract: tianbo hjr 3ff sz HJR 3FF HJR-3FF tianbo hjr relay HJR relay HJR-3FF-12 TIANBO Tianbo hjr tianbo 24vdc
Contextual Info: HJR-3FF TIANBO GANGLIAN ELECTRONICS HJR-3FF SPECIFICATION FILE NUMBER: P-08KA501A DATE: 2001/11/02 • Features 10A switching capability Small footprint Sealed type available ■ CONTACT DATA Contact Contact Form Material Max Switching Voltage 1A/1C AgCdO

HJR-21FF

Abstract: hjr 1 HJR-21FF-12VDC-S-H tianbo hjr relay 21FF 2770VA P-08KA601A Tianbo hjr relay 12vdc 240vac tianbo 24vdc
Contextual Info: HJR-21FF TIANBO GANGLIAN ELECTRONICS HJR-21FF SPECIFICATION FILE NUMBER: P-08KA601A DATE: 2001/11/02 • Features 10A switching capability SPST-NO configuration Small footprint Sealed version available ■ CONTACT DATA Contact Contact Form Material Max Switching Voltage

trkm s-z

Abstract: 1c7a HJR-78F tianbo hjr relay TIANBO TRKM TRKM D-12VDC-S-Z tianbo trkm s-z D-12VDC RELAY SZ 20A14VDC
Contextual Info: NINGBO TIANBO GANGLIAN ELECTRONICS CO., LTD HJR-78F TRKM SPECIFICATION FILE NUMBER：T810S-P004A DATE：2004/06/25 • CONTACT DATA Contact Contact Form Material 1A/1C/1B Silver Alloy Contact Ratings NO: 20A14VDC NC: 12A/14VDC 1C：7A 120VAC Max Switching Voltage

2SD1631

Contextual Info: TOSHIBA TOSHIBA TRANSISTOR 2SD1631 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) 2 S D 1 631 Unit in mm MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. • • 7.1 MAX High DC Current Gain : hjrß = 4000 (Min.)

2SC2532

Abstract: LED Driver IC toshiba
Contextual Info: TOSHIBA 2SC2532 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2532 Unit in mm A U D IO FREQUENCY AMPLIFIER APPLICATIONS. DRIVER STAGE FOR LED LA M P APPLICATIONS. + 0.5 TEMPERATURE COM PENSATION APPLICATIONS. • High hjrg . hjr;E (1) = 5000 (Min.) (IC = 10mA)

2SD1662

Contextual Info: TO SHIBA 2SD1662 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2 S D 1 662 HIGH CURRENT SWITCHING APPLICATIONS Unit in mm 53.2 ±0.2 15.9MAX • High DC Current Gain : hjrß = 1000 (Min.) • Low Collector Saturation Voltage iS# : v CE(sat) = 1-s v (Max.)

Contextual Info: T O S H IB A 2SD2406 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2406 Unit in mm PO W ER AM PLIFIER APPLICATIONS 10 ±0.3 • • High Power Dissipation : P q = 25W Tc = 25°C Good Linearity of hjr^ «S3.2 + 0.2 - 2.71Q.2 CHARACTERISTIC

MG200H1AL2

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG200H1AL2 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode. . High DC Current Gain : hjr|7=80 Min. (Ic=200A) . Low Saturation Voltage

HJR-21FF

Abstract: tv-5 120vac hjr 1 HJR relay 1H12A 15A120VAC 21FF T810S-P002C for 10A 120VAC relay
Contextual Info: T810S-P002C E L E C T R O N I C S PCB 继 电 器 HJR-21FF ● 12A switching capability ● SPST-NO configuration 03001003710 ● Small footptint ● Sealed version available u s E173485 c ● Class B/F available R50031008 ● Conform to RoHS,ELV directive

2SD2131

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2131 DARLINGTON POWER HIGH POWER SWITCHING APPLICATIONS. Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. 10±0.3 . High DC Current Gain #3.2 ±0.2 : hjr]7=2000(Min.) (Vc e =3V, Ic“ 3A) . Low Saturation Voltage: VpE(sat)= 1 •5V(Max.)(Ip=3A)

2-7D101A

Abstract: 2SC3673
Contextual Info: TOSHIBA 2SC3673 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC3673 Unit in mm SWITCHING APPLICTIONS SOLENOID DRIVE APPLICATIONS 7.1 MAX. 2.7MAX. • • High DC Current Gain : hjr^ = 500 Min. Low Saturation Voltage : VCE (sat) -0.5V (Max.) M A X IM U M RATINGS (Ta = 25°C)

F909

Abstract: IERR kammer
Contextual Info: 4 VERWENDET FOR CAD-GR10INAL ZElC hW JN G NICHT ÄMTERN ÄNDERUNGEN DTE DEM TE C tiNI5CÆN TORTSCHRITT D/ENEPi, BEHALTEN HJR UNS VOR ZEICHKW9 9E5CH0TZT DURCH COPVRI8HT f909 AMP DEUTSCHLAND 0NOH ALLE RECKTE VORBEHALTEN 5 lefte Blatt f von 2 2po L . 0 2 -0

DS1231

Abstract: DS2160 DS2180A DS2181 TP3054 TP3057 2bmi30 1413A
Contextual Info: DALLAS SEMICONDUCTOR CORP 3=ÌE D H EbimaO 0QQ4122 1 «DAL 0S2160 'T - ^ Z ^ X - C ! I M U L A S DS2160 DES PROCESSOR SEMICONDUCTOR E IPI •j I ■! i;I II II tw UBII^ . II. i V^'i ^yrí l i' i ^^ tààC'U ia FEATURES hJréM^tlraV.iTWrifiT PIN CONNECTIONS

HJR 3FF

Abstract: HJR-3FF hjr 1 HJR-3FF-S hjr 3ff s z relay 1h 24 T810S-P001C HJR relay 2770VA HJR3FFS
Contextual Info: T810S-P001C E L E C T R O N I C S PCB 继 电 器 HJR-3FF ● 10A switching capability ● Small footprint ● Sealed type available V D E 03001003706 ● Class B/F available R50031008 u s E173485 c ● Conform to RoHS,ELV directive 40005471 19.2x15.5×15.5

Contextual Info: 7 2142B2 PIN HEADER 1.27*1.27mm Dual Row/Right Angle 1.27 l CN fO -H 1.27±0.2 ° L 1*0 C<f 7T B B S3 P.C.B Board Layout — i4±0.15 B 2.60+0.2 i _27±0.02 0.46 ±0.02 SQ {>0000000 A= 1.27X(No.of P o s itio n s -1 )+ 1 .27± 0.3 B = 1.2 7 X (No. of P ositions—1.27)± 0.15

2SD1148

Abstract: 2SB863 audio amplifier 70w
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1148 POWER AMPLIFIER APPLICATIONS. Unit in mm 15.9MAX. . 0 3.2±qg FEATURES: . Complementary to 2SB863. . Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25 C CHARACTERISTIC RATING

1616a

Abstract: hl 1616 KSD1616 KSD1616A
Contextual Info: FCI KSD1616/1616A NPN Epitaxial Silicon Transistors Semiconductor AUDIO FR E Q U E N C Y PO W ER A M PLIFIER MEDIUM S P E E D SW ITC H IN G • Complement to KSD1616/1616A ABSOLUTE MAXIMUM RATINGS (Ta = 2 5 -ç Sym bol C h a ra cteristic Collector-base Voltage

hjr 1

Contextual Info: NUM BER D IM E N S IO N S IN M IL L IM E T E R S . M E T R IC DO NOT SCALE P R IN T 3 rd C —1 7 4 0 4 9 ANGLE P R O JE C T IO N 25.9 1 ^ _ 6. 6 \J HI [-4H I H 15 A L 1 3 - 2 .J m m □J O u l> r a u r Do Do H y1 ! GO n l\ J l\ J n o <U )( > in o ui 1 •n

DB499

Abstract: DB499-A
Contextual Info: DB499 f •i r 'A%t D IRECTIONAL YAGI A N T EN N A 10 dBd GAIN, 20 dB F/B RATIO, 806-960 M Hz A heavy duty, lightweight Yagi, the DB499 provides 10 dBd directional gain and 20 dB front-to-back ratio. * Unique Mount - Special design permits vertical or horizontal polarization as well

2SC5266

Abstract: 2SC5266A
Contextual Info: TOSHIBA 2SC5266A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5266A Unit in mm SWITCHING REGULATOR APPLICATIONS 10 ± 0.2 HIGH VOLTAGE SWITCHING APPLICATIONS 1 01.2 DC-DC CONVERTER APPLICATIONS • • • Excellent Switching Times : tr = 0.5/^s Max. , tf= 0.3/^s (Max.)

Contextual Info: MP4013 TOSHIBA TOSHIBA PO W ER TRANSISTOR M ODULE SILICON NPN EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 MP401 3 HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD INDUSTRIAL APPLICATIONS Unit in mm SWITCHING.

nec G506

Abstract: T1553 PHT-022 T1553-22 technitrol t1553 G52E111 G509 HT-0365 PE-5762 PHT-030
Contextual Info: WIDE BAND AND PULSE TRANSFORMERS For Isolation, Data Interface and ISDN Applications MICROTRAN FIGS 3 * ¥ FIG. 2F FIG. EP10 FIG. EP7 FIG. G5 FIG. RM5 ENCAPSULATED PULSE TRANSFORMERS FOR ISOLATION & DATA INTERFACE -1 2F '- - i PHT-029 PHT-023 3 RM5 1 70m H

Contextual Info: TOSHIBA 2SC5356 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC5356 SWITCHING REGULATOR APPLICATIONS Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS 6 .8 M A X . DC-DC CONVERTER APPLICATIONS (A ) 5.2 ± 0 .2 c • Excellent Switching Times : tf = 0.5 /us (Max.) (Iq = 1.2 A)

Contextual Info: MP4101 TOSHIBA TOSHIBA POWER TRANSISTOR MODULE SILICON NPN EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 M P 4 1 01 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS U nit in mm HAMMER DRIVE, PULSE MOTOR DRIVE. INDUCTIVE LOAD SWITCHING. 25.2 ± 0 .2