lvc16244
Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
Contextual Info: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List
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hd49323aha12134aha12141nha12155n+16ha12163ha12167fha12173ha12179fha12181fha12187flvc16244bc2402sk3174cbt1g125lv2gt14ahc32 hitachiha13557atransistor 2sc1162h8 hitachi programming manual30204sp
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APC UPS es 500 CIRCUIT DIAGRAM
Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.
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ade-40850502capc ups es 500 circuit diagramsk 100 gale 065 tf+82sk1058 mosfet application notesapc ups circuit diagram es 725general instrument data book2sk2264esi 252 impedance metertransistor bf 175pf01442sk212
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2SC 8550
Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4
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3sk3093sk3173sk318bb101c+16bb102cbb301cbb302cbb304cbb305cbb501c2sc 85506020v46030v4hitachi 08122b2sc 8050hitachi 08123btransistor h945h945transistor c 6030v42sk3545
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2SK1761
Abstract: 2SK1762
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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2SJ1334
Abstract: 2SK3235 HSK81 Hitachi DSAUTAZ006 HA16141
Contextual Info: HA16142P/FP PFC and PWM Controller Application Note ADE-504-006 Z Rev.0 5/17/02 Hitachi, Ltd. Notice When using this document, keep the following in mind: 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
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ha16142p/fpade-504-006do-35do-41+52sj13342sk3235hsk81hitachi dsautaz006ha16141
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2SK1764
Abstract: 2SK975
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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2SK1761
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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2SK1778
Abstract: 2SK109 2SJ236 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
Contextual Info: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.
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2SK1778
Abstract: 2SK1776 2SJ235 2SJ175 2SJ176 2SJ182 2SJ236 2SJ237 2SK1093 2SK1094
Contextual Info: HITACHI 12 DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.
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2sj2 high voltage p channel mosfet
Abstract: 2sj2 high voltage mosfet 2SK1778 2SJ182 2SJ299 2SK1204 2SK1763 2SJ175 2SK1665 2SK1776
Contextual Info: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.
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2sj2 high voltage p channel mosfet2sj2 high voltage mosfet2sk17782sj182+62sj2992sk12042sk17632sj1752sk16652sk1776
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2SK1778
Abstract: 2SJ236 2SK1776 2SJ299 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
Contextual Info: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.
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2SK1778
Abstract: 2SJ236 2sj177 pf0030 hitachi 2SJ299 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237
Contextual Info: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.
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ac Inverter schematics 10 kw
Abstract: 200v dc motor igbt MBN300A6 UPS schematics inverter circuit schematics 2SJ279 2SK1762 ac Inverter 10 kw GN12015C GN12030E
Contextual Info: HITACHI 2.2 Product Matrix : Discretes Modules 19 The full Hitachi IGBT line up is carefully designed to meet a wide range of user needs. There are future plans for a further expansion of this line up. Table 15 : Total IGBT Product Range Ratings DISCRETES
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gn4530cgn6010agn6015agn6020c+14gn6030cgn6050egn6075egn9060egn12015cgn12030eac inverter schematics 10 kw200v dc motor igbtmbn300a6ups schematicsinverter circuit schematics2sj2792sk1762ac inverter 10 kw
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mosfet inverter schematics
Abstract: MBN300A6 UPS schematics inverter circuit schematics 2sk1299 flyback 200w 2SK1094 GN12015C GN12030E GN4530C
Contextual Info: HITACHI 19 2.2 Product Matrix : Discretes Modules The full Hitachi IGBT line up is carefully designed to meet a wide range of user needs. There are future plans for a further expansion of this line up. Table 15 : Total IGBT Product Range Ratings DISCRETES
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gn4530cgn6010agn6015agn6020c+13gn6030cgn6050egn6075egn9060egn12015cgn12030emosfet inverter schematicsmbn300a6ups schematicsinverter circuit schematics2sk1299flyback 200w2sk1094
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2SJ235
Abstract: 2sk1299 2SJ182 2SJ244 2SJ250 2SK1336 2SK1337 2SK1579 2SK1697 2SK1698
Contextual Info: 8 1.5.3 HITACHI DlII-Series DIII-L Series Low Voltage Range, VDSS up to 120V The third generation of D-Series MOSFETs from Hitachi benefits from the latest development in Power MOSFET technology. The low voltage range of DIH-Series MOSFETs has the following enhanced features:-
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2SK1778
Abstract: 2sk1299 4AM12 transistor 2sk1304 2sj177 4AK22 2SK1919 2SK971 transistor 2sk 2SK972
Contextual Info: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching
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HITACHI Power MOSFET Arrays
Abstract: 2sk1299 2SK975 2sk1306 2SK1919 2SK970 2SK971 2SK972 2SK973 4AK15
Contextual Info: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching
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10-pin12-pin4ak172sk972+94ak152sk971hitachi power mosfet arrays2sk12992sk9752sk13062sk19192sk9702sk973
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2SK1254
Abstract: 2sj177 2SK970 2SK971 2SK972 2SK973 2SK975 4AK15 4AK16 4AK17
Contextual Info: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully m oulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching
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2sj217
Abstract: pf0030 hitachi 2SJ295 2SK1919 PF0040 KWSA103 PF0030 PF0042 2SJ214 2SJ220
Contextual Info: HITACHI 29 5.4 Communications Mobile RF SAW Filters NMT/GSM KTACS HITACHI KAMT« Tb Bx Tu ft* T» 9m, hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB HWSBXa HW SA03 H W SM » O m« Q m
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2sk1299
Abstract: PF0042 2SJ295 2SJ299 2SK1919 PF0040 KWSA103 PF0030 Hitachi Scans-001
Contextual Info: 29 HITACHI 5.4 Communications Mobile RF SAW Filters NMT/GSM KTACS HITACHI KAMT« Tb Bx Tu ft* T» 9m, hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB HWSBXa HW SA03 H W SM » O m« Q m
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K1761
Contextual Info: 2SK1761 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Outline
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Contextual Info: ‘tM'K.gOS 0013533 Tfi? » H i m 2SK1764 HITACHI/ OPTOELECTRONICS Silicon N Channel MOS FET Application blE I UPAK Low frequency amplifier High speed switching Features • Low on-resistance • High speed switching • Suitable for switchingregulator, DC-DC
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HITACHI 2SJ56
Abstract: 2SJ56 2SJ56 2sk176 2Sk176 HITACHI 2SJ56 HITACHI 2SJ55 2Sj55 HITACHI 2SK176 2Sk175 HITACHI Hitachi 2sk176 2sj56
Contextual Info: blE D • 4MTbEDS DGlEfi^fl 2SJ55,2SJ56 &Z3 MHIT4 HITACHI/ OPTOELECTRONICS SILICON P-CHANNEL MOS FET LOW FREQU EN CY POWER AMPLIFIER Complementary Pair with 2SK175, 2SK176 ■ FEATURES • High Power Gain. • • Excellent Frequency Response. High Speed Switching.
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