HIPERFET POWER MOSFETS Search Results

Contextual Info: HiferFET F-Series HiPerFET™ Power MOSFETs with Fast Intrinsic Diode

Contextual Info: PRELIMINARY SPECIFICATION HiPerFET Power MOSFETs TM VDSS IXFN44N50U2 IXFN44N50U3 500 V IXFN48N50U2 IXFN48N50U3 500 V ID cont RDS(on) trr 44 A 48 A 0.12 Ω 0.10 Ω 35 ns 35 ns 3 3 Buck & Boost Configurations for PFC & Motor Control Circuits 4 2 2 4 1 HiPerFET MOSFET

VUM 24-05N

Contextual Info: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode Standard and MegaMOS FETs HDMOS II Eliminates Tradeoffs HiPerFET™ Power MOSFETs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,

mosfet 4400

Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
Contextual Info: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,

depletion mode mosfet

Contextual Info: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs The High Performance MOSFET family of Pow er MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete, fast recovery "free wheeling diodes" in a

1200 volt mosfet

Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
Contextual Info: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET

Contextual Info: PIXYS AdvancedTechnioal Information HiPerFET Power MOSFETs IXFR 80N20Q ISOPLUS247™, Q-Class Electrically Isolated Back Surface VOSS ID25 N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt trr <200 ns Symbol Test Conditions Maximum Ratings

dioda by 238

Abstract: 1xys 1XFM67N10 HiperFET IXFN50N25 IXFM50N20 IXFM6N90 IXFH40N30 IXFH10N100 IXFH11N100
Contextual Info: I X Y S CORP IñE D • 4bflb22b 0000573 1 ■ HiPerFETs_ The HiPerFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete, fast recovery "free wheeling" rectifiers in a broad range of power switching

Contextual Info: Advanced Technical Information HiPerFET Power MOSFETs IXFR 58N20Q ISOPLUS247™ Q Class Electrically Isolated Back Surface N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances trr <200 ns Maximum Ratings Symbol Test Conditions

Contextual Info: Advance Technical Information IXFH 140N10P VDSS ID25 PolarHVTM HiPerFET IXFT 140N10P Power MOSFETs = = = RDS on 100 V 140 A Ω 11 mΩ N-Channel Enhancement Mode Fast Intrinsic Diode; Avalanche Rated TO-247 (IXFT) Symbol Test Conditions Maximum Ratings VDSS

IXFN64N50PD2

Abstract: IXFN64N50PD3
Contextual Info: IXFN64N50PD2 IXFN64N50PD3 PolarHVTM HiPerFET Power MOSFETs Boost & Buck Configurations Ultra-fast FRED Diode VDSS ID25 RDS(on) trr 3 3 miniBLOC E153432 4 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 50A   85m  200ns

Contextual Info: PRODUCT DETAIL Part Num: IXFR24N90Q Description: POWER DEVICES > DISCRETE MOSFETs > N-Channel: Power MOSFETs with Fast Intrinsic Diode HiPerFET > (100V to 1000V) Q-Class HiPerFETs Configuration: Single Package Style: ISOPLUS247™ Status: Not for New Designs: Contact the factory for lead times (part is still available for purchase).

TL 650 ht

Abstract: mbab diode sy 166 ditti IXFH26N50 MKL series IXFN15N100 IXFMS0N20 IXFH12N100 IXFH5N100
Contextual Info: I X Y S CÔRP lûE D • 4bSL22b Q00Q573 1 ■ f JiPerFETs_ The HIPerFET family of Power MOSFETs Is designed to provide superior dv/dt performance while eliminating th e need for discrete, fast recoveiy “free wheeling" rccllfiers in a broad range of power switching

44n50

Abstract: 48N50
Contextual Info: SMOS44/48N50D2, SMOS44/48N50D3 Power MOSFETs Dimensions SOT-227 ISOTOP Symbol HiPerFET MOSFET VDSS Test Conditions 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 37.80 30.30

J9100

Abstract: J 9100 D 819
Contextual Info: □ IXYS HHifl JL æ * X HiPerFET Power MOSFETs IXFR 180N085 ISOPLUS247™ Electrically Isolated Back Surface V DSS = 85 V 180 A ^D25 RDS(on) = 7 mQ ” trr < 250 ns Single MOSFET Die Preliminary data sheet Symbol TestConditions Maximum Ratings V DSS

Contextual Info: !3 IX ^ Y "S Advanced Technical Information VDSS IXFH 75N10Q IXFT 75N10Q HiPerFET Power MOSFETs Q-Class = 100 V = 75 A = 20 mQ ^D25 D DS on trr < 200ns N-Channel Enhancement Mode Avalanche Rated, Highdv/dt Low Gate Charge and Capacitances Symbol TestConditions

Contextual Info: □IXYS Advanced Technical Information HiPerFET Power MOSFETs IXFR120N20 ISOPLUS247™ VDSS = 200 Electrically Isolated Back Surface Ro^on)= U V = 105 A 17 mQ trr < 250 ns Single MOSFET Die ÛB: Maximum Ratings Symbol Test Conditions V T, = 25°C to 150°C

Contextual Info: □IXYS Advanced Technical Information HiPerFET Power MOSFETs IXFR180N10 ISOPLUS247™ V,DSS = 100 V ^D25 = 165 A Electrically Isolated Back Surface R DS(on) = 8 mQ t rr < 250 n s Single MOSFET Die ÛB: Maximum Ratings Symbol Test Conditions V DSS v DGR

Contextual Info: □IXYS Advanced Technical Information HiPerFET Power MOSFETs Q-Class IXFH 4N100Q IXFT 4N100Q V DSS ^D25 D D S o n = 1000 V 4A = 2.8 Q trr < 250 ns N-Channel Enhancement Mode Avalanche Rated, LowQ , Highdv/dt Symbol TestConditions Maximum Ratings V DSS

Contextual Info: DIXYS Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 130N30 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions v DSS 300 > vD0R Tj =25°Cto150°C T.J =25°Cto150°C; RrGS =1 M ft 300 > Vos

48N50

Abstract: 44N50
Contextual Info: SMOS44/48N50D2, SMOS44/48N50D3 Power MOSFETs Dimensions SOT-227 ISOTOP Symbol HiPerFET MOSFET VDSS Test Conditions 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 37.80 30.30

Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFC 26N50P VDSS = 500 V = 15 A ID25 Ω RDS on = 260 mΩ Electrically Isolated Tab, N-Channel Enhancement Mode, Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS

Contextual Info: PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFC14N60P RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 600V 8A Ω 630mΩ 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISOPLUS 220TM E153432 Symbol Test Conditions Maximum Ratings

IXFC14N60P

Abstract: 14n60 T14n
Contextual Info: IXFC14N60P PolarHVTM HiPerFET Power MOSFET VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 600V 8A Ω 630mΩ 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISOPLUS 220TM E153432 Symbol Test Conditions Maximum Ratings