HIGH FREQUENCY TRANSISTORS Search Results

SMD M1A

Abstract: marking g3p marking L2 SOT23 6 m1a smd smd marking code m1a L2 SOT23 BF660 smd transistors smd code marking sot23 smd transistors code
Contextual Info: High Frequency SMD Transistors High Frequency SMD® Transistors Description Mechanical Data Philips Components high-frequency transistors fill the gap between general purpose transistors and wideband transistors by offering transition frequencies from a few hun­

2N3866

Abstract: zetex ztx327 2N2708 Zetex bfy90 Transistor 2N3866 2N2102 2N4427 2N918 BFY90 BSY55
Contextual Info: HIGH FREQUENCY TABLE 7 - NPN SILICON PLANAR HIGH FREQUENCY TRANSISTORS The transistors shown in this table are designed for high frequency operation amplifier and oscillator applications. Reference should be made to the RF Transistors and Diodes section which contains

2N4036

Abstract: TRANSISTOR BC140 transistor 2N2219 BUY90 ZT Ferranti 2N2102 2N2405 2N2708 2N3866 2N4427
Contextual Info: HIGH FREQUENCY TABLE 7 - NPN SILICON PLANAR HIGH FREQUENCY TRANSISTORS The transistors shown in these tables are designed for high frequency operation Amplifier and Oscillator applications. The tables should be referred to in conjunction with the RF Section which contains details

High frequency transistors

Abstract: RF diodes 2N2708 2n3570 2N918 ZT92 BFY90 2N2102 2N4036 ZT91
Contextual Info: HIGH FREQUENCY T AB LE 7 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTORS The transistors shown in this table are designed for high frequency operation Am plifier and Oscillator applications. This table should be referred to in conjunction w ith the RF Diodes

2N3019

Contextual Info: 2N3019 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTION The 2N3019 is a silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage.

2N3019

Contextual Info: 2N3019 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTION The 2N3019 is a silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage.

2N3019

Abstract: 2N301 2N3019-2N3020 2N3020 2N302
Contextual Info: 2N3019 2N3020 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTION The 2N3019 and 2N3020 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, designed for high-current, high-frequency amplifier applications. They feature high gain and low saturation

marking AD

Abstract: 2sc4043 2SC4083 2SC3838K 2SC4043S 2SC4726 2SC4726H SC-75A SC-89 T106
Contextual Info: 2SC4726H / 2SC4726 / 2SC4083 / _ 2SC3838K / 2SC4043S Transistors High-Frequency Amplifier Transistor 11V, 50mA, 3.2GHz 2SC4726H12SC472612SC408312SC3838K 2SC4043S •External dimensions (Units : mm) •Features 1) High transition frequency. (Typ. fr= 1.5GHz)

Transistor 2N3866

Abstract: P039 zt91 2N2102 2N2708 2N3866 2N4427 2N918 BFY90 BSY55
Contextual Info: HIGH FREQUENCY TABLE 7 - NPN SILICO N PLANAR HIGH FREQUENCY T R A N SIST O R S The transistors show n in this table are designed for high frequency operation amplifier and oscillator applications. Reference should be made to the RF Transistors and Diodes section which contains

2SA1723

Abstract: BX-0975
Contextual Info: Ordering number:EN4668 PNP Epitaxial Planar Silicon Transistors 2SA1723 High-Frequency Amplifier, Medium-Power Amplifier Applications Applications Package Dimensions • Wideband amplifiers. · High-frequency drivers. unit:mm 2009B [2SA1723] Features · High fT fT=1.5GHz typ .

2SA1815

Abstract: 2SC4432 ITR04747 ITR04748
Contextual Info: Ordering number:ENN4625 PNP Epitaxial Planar Silicon Transistors 2SA1815 FM, RF, MIX, IF Amplifier, High-Frequency General-Purose Amplifier Applications Features Package Dimensions • High power gain : PG=25dB f=100MHz . · High cutoff frequency ; fT=750MHz typ.

"Marking AC"

Abstract: marking ac 05 marking code transistor ROHM 2SC3837K 2SC4082 2SC4725 2SC4725H SC-75A SC-89 T106
Contextual Info: 2SC4725H / 2SC4725 / 2SC4082 / 2SC3837K Transistors High-Frequency Amplifier Transistor 18V, 50mA, 1.5GHz 2SC4725H / 2SC4725 / 2SC4082 / 2SC3837K •External dimensions (Units: mm) •Features 1) High transition frequency. (Typ. fr = 1.5GHz) 2) Small rbb’ Ccand high gain. (Typ. 6ps)

2SC3837K

Abstract: 2SC4082 2SC4725 2SC5661 SC-75A T106 T146 transistor frequency 1.5GHz gain 20 dB marking NP
Contextual Info: 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Transistors High-Frequency Amplifier Transistor 20V, 50mA, 1.5GHz 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K zDimensions (Unit : mm) zFeatures 1) High transition frequency. (Typ. fT = 1.5GHz) 2) Small rbb’⋅Cc and high gain. (Typ. 6ps)

2SC5662

Abstract: 2SC3838K 2SC4083 2SC4726 SC-75A T106 T146
Contextual Info: 2SC5662 / 2SC4726 / 2SC4083 /2SC3838K Transistors High-Frequency Amplifier Transistor 11V, 50mA, 3.2GHz 2SC5662 / 2SC4726 / 2SC4083 / 2SC3838K zExternal dimensions (Unit : mm) zFeatures 1) High transition frequency. (Typ. fT= 3.2GHz) 2) Small rbb’⋅Cc and high gain. (Typ. 4ps)

3020

Abstract: 3019 2N3019 3020 transistor 2n3020
Contextual Info: 2N 3019 2N 3020 SILICON PLANAR NPN HIGH-CURRENT, HIGH-FREQUENCY AMPLIFIERS The 2N 3019 and 2N 3020 are silicon planar epitaxial NPN transistors in Jedec T O -39 metal case, designed fo r high-current, high-frequency am plifier applications. They feature high gain and low saturation voltages.

Contextual Info: 8 Microwave Components Isolators Chip Multilayer Hybrid Couplers Field-Effect Transistors MESFET Chip Multilayer Antennas Chip Dielectric Antennas Dielectric Resonators (RESOMICS ) High-Frequency Monolithic Ceramic Capacitors High-Frequency Microchip Capacitors

Contextual Info: Æ T SGS-THOMSON n lsi S IIL[iCTISÎ iD©S 2N3019 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTION The 2N3019 is a silicon planar epitaxial NPN transistors in JedecT O -39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation

2SC3354

Contextual Info: Transistors 2SC3354 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm 4.0±0.2 • Features • Optimum for high-density mounting • Allowing supply with the radial taping • High transition frequency fT 15.6±0.5

2SC3354

Contextual Info: Transistors 2SC3354 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm 4.0±0.2 0.8 3.0±0.2 2.0±0.2 • Optimum for high-density mounting • Allowing supply with the radial taping • High transition frequency fT

2SA1870

Abstract: SST8245 2sa1807 SSTA13
Contextual Info: Transistors/Surface Mounting Type Quick Reference MOS FET Transistors • EMT3 Package • Negative symbol for PNP type is omitted. § : High-Frequency type • UMT3 Package # : High hpe type § : High-Frequency type 66 itomn * >> \ , <“ • H I# , ‘ ,

2SB511

Abstract: 2SC2078 2SC4030 2SA1011 2SC2344 2SC4031 2SC4493 2SC4572 2SC4578 2SC4579
Contextual Info: SANYO Large-signal Transistors For high-frequency, high-voltage and general purpose use We have other large-signal transistors which were not included in any classified types nor packages in this document. They are for high frequency, high voltage and general purpose use, and are shown below.

2SD1046

Abstract: 2SB514
Contextual Info: SAfiYO Large-signal Transistors For high-frequency, high-voltage and general purpose use We have other large-signal transistors which were not included in any classified types nor packages in this document. They are for high frequency, high voltage and general purpose use, and are shown below.

MPQ918

Abstract: MO chip Transistor 2n918 die transistor k84 2N918 2N918 thermal resistance PDB00 chip die hp transistor
Contextual Info: MPQ918 SILICON QUAD DUAL IN-LINE NPN SILICON ANNULAR HIGH FREQUENCY AMPLIFIER TRANSISTORS QUAD DUAL IN-LINE NPN SILICON HIGH FREQUENCY AMPLIFIER TRANSISTORS . designed for low-level, high-ijain am plifier applications. • Lo w Noise Figure — @ I q - 1.0 mAdc

MRF581

Abstract: MRF581A IS211 MRF581M f5b FERRITE f5b FERRITE bead
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF581 MRF581A The RF Line NPN Silicon High-Frequency Transistors . . . designed for high current low power amplifiers up to 1.0 GHz. • lc = 200 mA LOW NOISE HIGH-FREQUENCY TRANSISTORS NPN SILICON Low Noise 2.0 dB @ 500 MHz