HIGH FREQUENCY SILICON OSCILLATOR Search Results

MRF5160

Abstract: F5160 MRF*5160
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F5160 The RF Line PNP Silicon High Frequency Transistor lc = -400 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR PNP SILICON . . . designed for am plifier, oscillator or frequency m ultiplier applications in industrial

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF313 The RF Line NPN Silicon High-Frequency TVansistor . . . designed for wideband amplifier, driver or oscillator applications in military, 1.0 W, 400 MHz HIGH-FREQUENCY TRANSISTOR NPN SILICON mobile, and aircraft radio.

transistor c5

Abstract: transistor c3-12 2N3866 c4 ic rf amplifier high frequency transistor
Contextual Info: DATA SHEET 2N3866 NPN SILICON HIGH FREQUENCY TRANSISTOR JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3866 is a Silicon NPN RF Transistor, mounted in a hermetically sealed package, designed for high frequency amplifier and oscillator applications.

2N3866A

Abstract: 2n3866 Transistor 2N3866
Contextual Info: 2N3866 2N3866A Central TM Semiconductor Corp. NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3866 and 2N3866A are Silicon NPN RF Transistors, mounted in a hermetically sealed package, designed for high frequency amplifier and oscillator applications.

2M4427

Abstract: TRANSISTOR 2SC 635
Contextual Info: 7 = 3 /- 2 3 MOTOROLA SC XSTRS/R F 4bE D b3b7ES4 00T404S <4 H I I O T b MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e R F Lin e 1 W - 175 MHz HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for amplifier, frequency multiplier, or oscillator

2N3866

Abstract: zetex ztx327 2N2708 Zetex bfy90 Transistor 2N3866 2N2102 2N4427 2N918 BFY90 BSY55
Contextual Info: HIGH FREQUENCY TABLE 7 - NPN SILICON PLANAR HIGH FREQUENCY TRANSISTORS The transistors shown in this table are designed for high frequency operation amplifier and oscillator applications. Reference should be made to the RF Transistors and Diodes section which contains

2N4036

Abstract: TRANSISTOR BC140 transistor 2N2219 BUY90 ZT Ferranti 2N2102 2N2405 2N2708 2N3866 2N4427
Contextual Info: HIGH FREQUENCY TABLE 7 - NPN SILICON PLANAR HIGH FREQUENCY TRANSISTORS The transistors shown in these tables are designed for high frequency operation Amplifier and Oscillator applications. The tables should be referred to in conjunction with the RF Section which contains details

High frequency transistors

Abstract: RF diodes 2N2708 2n3570 2N918 ZT92 BFY90 2N2102 2N4036 ZT91
Contextual Info: HIGH FREQUENCY T AB LE 7 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTORS The transistors shown in this table are designed for high frequency operation Am plifier and Oscillator applications. This table should be referred to in conjunction w ith the RF Diodes

2N5177

Contextual Info: SGI Silicon Group Inc. 2N5177 Silicon NPN high power UHF transistor 2N5177 is designed for power amplifier, frequency multiplier or auto-oscillator applications in industrial equipment class C . ^Output power: 20 watt (typ) 100 - 500 MHz Frequency range:

2N3866A

Abstract: Transistor 2N3866 2N3866 RF 2N3866 15-September
Contextual Info: 2N3866 2N3866A NPN SILICON HIGH FREQUENCY TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3866 and 2N3866A are Silicon NPN RF Transistors, mounted in a hermetically sealed package, designed for high frequency amplifier and oscillator applications.

to106

Abstract: NTE108 oscillatore 1ghz NTE108-1 NPN Transistor TO92 transistor amplifier 5v to 15v
Contextual Info: NTE108 and NTE108−1 Silicon NPN Transistor High Frequency Amplifier Description: The NTE108 TO92 and NTE108−1 (TO106) are silicon NPN transistors designed for low−noise, high−frequency amplifiers, 1GHz local oscillatore, non−neutralized IF amplifiers, and non−saturating

2SC2217

Abstract: 2SC2367 NE21935 Ic 9148
Contextual Info: NEC" NE21900 NE21903 NE21908 NE21935 NPN SILICON HIGH FREQUENCY TRANSISTOR NOT RECOMMENDED FOR NEW DESIGN FEATURES_ DESCRIPTION • HIGH fT: 8 GHz The NE219 series of NPN silicon bipolar transistors is designedtor small signal amplifiers and oscillator applications up

Contextual Info: MOTOROLA m SEM ICO NDUCTOR TECHNICAL DATA M R F5943 The RF Line DIE SOURCE SAME AS 2N5943 N PN S ilico n High Frequency Tran sistor Iq = 400 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for amplifier, oscillator or frequency multiplier applications in industrial

oscillatore 1ghz

Abstract: NTE108 NPN Transistor TO92
Contextual Info: NTE108 Silicon NPN Transistor High Frequency Amplifier Description: The NTE108 is a silicon NPN transistor in a TO92 type case designed for low–noise, high–frequency amplifiers, 1GHz local oscillatore, non–neutralized IF amplifiers, and non–saturating circuits with rise

STCL1100

Abstract: STCL1120 STCL1160
Contextual Info: STCL1100 STCL1120 STCL1160 High frequency silicon oscillator family Features • Fixed frequency 10/12/16 MHz ■ ±1.5% frequency accuracy over all conditions ■ 5 V ±10% operation ■ Low operating current, ultra low standby current ■ Push-pull, CMOS compatible frequency

NEC 10F

Abstract: low-noise L-band tuner nec mmic Monolithic Amplifier NEC JAPAN TRANSISTORS 1981 nec book
Contextual Info: just imagine NEC MUL TI MEDI A NESAT PROCESS nan By utilizing the NESAT NEC Silicon Advanced Technology process, NEC realizes low-noise silicon transistors, high-perform ance silicon m onolithic integrated circuits, as well as in the super high-frequency range high reliability.

RF POWER TRANSISTOR NPN 3GHz

Abstract: NTE2662 S21E
Contextual Info: NTE2662 Silicon NPN Transistor High Frequency, Low Noise RF Description: The NTE2662 is a silicon NPN type transistor in a miniature surface mount package designed for oscillator applications up to 3GHz. This device features low voltage operation, low phase noise, and high

transistor tic 2250

Abstract: tic 2250
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRFQ17 The RF Line DIE S O U R C E SA M E AS BFQ17 IMPN Silicon High Frequency Transistor lc = 300 m A S U R F A C E M OUNT HIGH FR EQ U EN C Y TR AN SISTO R NPN SILICON . . . designed for amplifier, oscillator or frequency multiplier applications in industrial

2n4427 MOTOROLA

Abstract: 2N4427
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4427 The R F Line 1 W - 1 7 5 MHz NPN SILICON HIGH FREQUENCY TRANSISTOR HIGH FREQUENCY TRANSISTOR . . . designed fo r am plifier, frequency m ultiplier, or oscillator N PN SILIC O N applications in m ilita ry and industrial equipm ent. Suitable fo r use

High frequency silicon oscillator

Abstract: STCL1120 STCL1100 STCL1160 13337
Contextual Info: STCL1100 STCL1120 STCL1160 High frequency silicon oscillator family Not recommended for new design Features • Fixed frequency 10/12/16 MHz ■ ±1.5% frequency accuracy over all conditions ■ 5 V ±10% operation ■ Low operating current, ultra low standby

high frequency transistor

Contextual Info: 2SC2951 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The ASI 2SC2951 is a High Frequency Transistor Designed for General Purpose Oscillator Applications up to 10 GHz. PACKAGE STYLE .200 2L FLG Dimensions are in mm FEATURES: • POSC = 630 mW Typical at 7.5 GHz

STCL1100

Abstract: STCL1120 STCL1160
Contextual Info: STCL1100 STCL1120 STCL1160 High frequency silicon oscillator family Not recommended for new design Features • Fixed frequency 10/12/16 MHz ■ ±1.5% frequency accuracy over all conditions ■ 5 V ±10% operation ■ Low operating current, ultra low standby

Contextual Info: STCL1100 STCL1120 STCL1160 High frequency silicon oscillator family Not recommended for new design Features • Fixed frequency 10/12/16 MHz ■ ±1.5% frequency accuracy over all conditions ■ 5 V ±10% operation ■ Low operating current, ultra low standby

high frequency transistor

Abstract: S21C2
Contextual Info: OSC-0.3CP NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE .138 2L PILL DESCRIPTION: The OSC-0.3CP is a High Frequency Transistor designed for C Band Oscillator Applications. 0.095 0.105 0.023 0.027 FEATURES: • POUT = 320 mW Typ. at 7.5 GHz • Gold Metalization