DMILL
Abstract: RAD HARD TRENCH TRANSISTOR BPSG HEP transistors hep silicon diode 1E14 temic jfet jfet n channel ultra low noise nuclear Neutron Radiation Detector
Contextual Info: 10MRAD Si DMILL Mixed Analog/Digital Radiation Hard BiCMOS An emerging need in HEP MPW The decision to develop new equipment for High Energy Physics (HEP) research has led the need for ultra rad hard technology. The radiation tolerance for detector electronics adjacent to proton collision
|
Original
|
10mradd-85386i-20157dmill+9rad hard trench transistorbpsghep transistorshep silicon diode1e14temic jfetjfet n channel ultra low noisenuclearneutron radiation detector
|
PDF
|
DMILL
Abstract: nuclear radiation detector Higgs 3 microprocessor radiation hard Neutron Radiation Detector Bipolar Junction Transistor npn LHC HEP transistors 10MRAD
Contextual Info: 2 rad s/cm M 10 utron 14 ne 10 DMILL mixed analog/digital Radiation Hard BiCMOS An emerging need in HEP The decision to develop new equipment for High Energy Physics HEP research has lead to the need for ultra hard technology. The detector electronics adjacent to proton collision areas can accumulate radiation doses
|
Original
|
dmillnuclear radiation detectorhiggs 3microprocessor radiation hard+4neutron radiation detectorbipolar junction transistor npn lhchep transistors10mrad
|
PDF
|
hep 154 silicon diode
Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This
|
OCR Scan
|
my110bz0206z0208z0210+16z0211z0212z0214z0215z0217z0219hep 154 silicon diodezy 406 transistormotorola hep 801hep 154 diodehep r1751triac zd 6072sb337rs5743.3f82zhep 230 pnp
|
PDF
|
triac zd 607
Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni cian. The information contained herein is based on an analysis of the published
|
OCR Scan
|
tht404zv15azy33azt696+16zv15bzy33bzt697zt706zv27azy62atriac zd 607hep c60042sb5042sc 968 npn transistorsje 607motorola c6004diode by127 specificationsk872af118motorola semiconductor hep c3806p
|
PDF
|
2n2222 itt
Abstract: 2N2222A itt itt 2n2222 BSY86 BSY85 BSY83 itt 2N2222A 2N2219 transistor BSY84 2N2218A
Contextual Info: ITT Semiconductors NPN Transistors N P N S ilicon M edium Current Transistors Metal Can TO-39 or TO-18 . V CBo up to 75V. O u tlin e D raw ing H o. 66 ap plies fo r TO -39 ty p es . O u tlin e D raw ing N o. 65 ap plies fo r TO -18 ty p es . M ax. ratings
|
OCR Scan
|
2n22187785a2n2218a31275x+152n221927786x2n2219a31276h2n222131272e2n2222 itt2n2222a ittitt 2n2222bsy86bsy85bsy83itt 2n2222a2n2219 transistorbsy84
|
PDF
|
HEP transistors
Abstract: 2n6576 2N6578
Contextual Info: File Number 2N6576, 2N6577, 2N6578 1152 15-Ampere N-P-N Darlington Power Transistors 60, 90, 120 Volts, 120 Watts Gain of 2000 at 4 A TERM INAL DESIGNATIONS Features: c • Operates from 1C without predriver ■ Low leakage at high temperature Applications:
|
OCR Scan
|
2n65762n65772n657815-ampere+22751fthep transistors
|
PDF
|
BD2428
Abstract: HEP transistors
Contextual Info: BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS CopyrjgHI O 1997, Power Innovations Limited, UK JU N E 1973 - REVISED M ARCH 1997 D esigned for Complementary U m with the BD241 Series T 0-220 PA C KA G E TOP VIEW 40 W at 25°C C ase Temperature
|
OCR Scan
|
bd242bd242abd242bbd242c+4bd2418d242bbd2428hep transistors
|
PDF
|
HEP transistors
Abstract: transistor s 544a B0544 544c
Contextual Info: BD544, BD544A, BD544B, BD544C PNP SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, U K JU NE 1973 - R E V IS E D M A R C H 1997 • Designed for Complementary Use with the BD543 Series • 70 W at 25“C Case Temperature • 8 A Continuous Collector Current
|
OCR Scan
|
bd544bd544abd544bbd544c+6bd543o-220hep transistorstransistor s 544ab0544544c
|
PDF
|
OPA03
Abstract: DMILL 65260 npn nv SRAM cross reference SUN SENSOR BGP01 hep 50 hep silicon diode scr spice model SMALL ELECTRONICS PROJECTS
Contextual Info: Atmel is manufacturing the DMILL technology in its Nantes’ factory. Primarily developed to serve the High Energy Physics market, the technology offers versatile components suitable for any advanced mixed or pure digital conception. Taking advantage of SOI use and trench insulators, the SCR structures inherently present in
|
Original
|
opa03dmill65260 npnnv sram cross reference+6sun sensorbgp01hep 50hep silicon diodescr spice modelsmall electronics projects
|
PDF
|
OPA03
Abstract: OPA02 128 x 1 multiplexer hep silicon diode DMILL BGP02 calorimeter sensor CIRCUIT inverter grade SCR BGP01 digital SUN SENSOR cmos detector space radiation
Contextual Info: Atmel is manufacturing the DMILL technology in its Nantes’ factory. Primarily developed to serve the High Energy Physics market, the technology offers versatile components suitable for any advanced mixed or pure digital conception. Taking advantage of SOI use and trench insulators, the SCR structures inherently present in
|
Original
|
4169bopa03opa02128 x 1 multiplexer+7hep silicon diodedmillbgp02calorimeter sensor circuitinverter grade scrbgp01digital sun sensor cmos detector space radiation
|
PDF
|
2N5141
Contextual Info: , Lf nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 TYPES 2N4998, 2N5000, 2NS148, 2N5150 N-P-N SILICON POWER TRANSISTORS HIGH-FREQUENCY POWER TRANSISTORS WITH COMPUTER-DESIGNED ISOTHERMAL GEOMETRY
|
Original
|
2n49982n50002ns1482n5150+72n49992n50012n51472n61492n40m2n5142n5141
|
PDF
|
TIPP31
Abstract: TIPP31A TIPP31B TIPP31C TIPP32 TIPP32A TIPP32B TIPP32C
Contextual Info: TIPP31, TIPP31A, TIPP31B, TIPP31C NPN SILICON POWER TRANSISTORS _ M A Y 1989 • R EVISED M A Y 1995 20 W Pulsed Pow er Dissipation • 100 V C apability 1 LP PACKAGE TOP VIEW • 2 A C ontinuous Collector Current • 4 A Peak C ollector Current
|
OCR Scan
|
tipp31tipp31atipp31btipp31c+4tipp32tipp32atipp32btipp32c
|
PDF
|
2N3599
Abstract: 2N3597 2N3598 Pirgo Electronics 2N3599/2N3598/2N3597
Contextual Info: 0 0 4 3 5 9 2 _ A _ P ^ E L E C T R O N I C S I N C ,r<f 3 ’ ” ] £ | D 0 4 3 5 c] g POWER TRANSISTORS ENGINEERING BULLETIN D 000D 4S ñ D &: 2N3599/2N3598/2N3597 '“*^.Vv3 b TYPE 2N 3599,2N 3598,2N 3597, 2 0 AMP NPN SILICON PLANAR POWER TRANSISTORS
|
OCR Scan
|
dd43scddd0d422n3599/2n3598/2n35972n3599+42n35982m35972n3597pirgo electronics
|
PDF
|
s43a
Abstract: 2N6533 2N6531 2N6530 2N6532 1000 watts schematic diagram of solid state audio amplifier RCA 0798 2N6532 RCA A09 monolithic amplifier
Contextual Info: 3Ö750Ö1 DQ17HS3 0 | } .u a rn n g io n P o w e r Transistors File Number 873 2N6530, 2N6531, 2N6532, 2N6533 8-Ampere N-P-N Darlington Power Transistors 80, 100, 120 Volts, 60 Watts Gain of 1000 at 5 A 2N6530, 2N6532 Gain of 1000 at 3 A (2N6533) Gain of 500 at 3 A(2N6531)
|
OCR Scan
|
2n65302n65312n65322n6533+792cs-39969o-220abs43a1000 watts schematic diagram of solid state audio amplifierrca 07982n6532 rcaa09 monolithic amplifier
|
PDF
|
|
|
9931 morocco
Abstract: L6504 si24
Contextual Info: Æ T S C S 'T H O M S O N EiilOg^OllLKgTr^QHgi L6504 SOLENOID CONTROLLER PRELIM IN ARY DATA . SWITCH MODE CURRENT REGULATION •TTL COMPATIBLE LOGIC INPUTS . DRIVES ONE OR TWO EXTERNAL POWER TRANSISTORS ■VERY PRECISE ON-CHIP REFERENCE . ANALOG CURRENT CONTROL INPUT
|
OCR Scan
|
l65049931 moroccosi24 |
PDF
|
HEP transistors
Contextual Info: 3257 O ULTRA FAST AND HYPER FAST RECOVERY RECTIFIERS B -0 4 * 2 Pin C ase 3 C ontact S S D I for higher voltage units. AXIAL LEADED RECTIFIERS @ 3269 o IH W K 1-3 1 > o —3 N) W [m !«C lO m to !h •IZ r> u i' - 'J It? 0= ULl cr ir □ !§ in Is I'ru
|
OCR Scan
|
f/163o-111hep transistors |
PDF
|
n6532
Contextual Info: 3Ö750Ö1 DQ17HS3 0 | } .u arn n g io n P o w e r Transistors File Number 873 2N6530, 2N6531, 2N6532, 2N6533 8-Ampere N-P-N Darlington Power Transistors 80, 100, 120 Volts, 60 Watts Gain of 1000 at 5 A 2N 6530, 2N 6532 Gain of 1000 at 3 A (2N 6533) Gain of 500 at 3 A (2 N 6 5 3 1 )
|
OCR Scan
|
dq17hs32n65302n65312n6532+52n6533-220abrca-2n6530p60i9n6532
|
PDF
|
CQ417
Abstract: 2N2012 2N3558 2N4212 HEP transistors 2n3029 2n2686
Contextual Info: A U SILICON CONTROLLED RECTIFIERS O' 180mA TO-18 ro I 200mA TO-18 260mA TO-18 275mA TO-18 280mA TO-18 ON STATE CURRENT 390mA 350mA TO-18 TO-5 500mA TO-18 1.0A TO-5 2N4212 25 1.3A TO-5 2N2009 o a 2N948 30 50 2N5719 2N4109 2N5720 2N949 2N950 2N5721 2N951 2N886A
|
OCR Scan
|
180ma200ma260ma275ma+12280ma390ma350ma500ma2n42122n2009cq4172n20122n3558hep transistors2n30292n2686
|
PDF
|
2n2222 itt
Abstract: BSY86 ME6002 ME6102 BFY72 MA8003 fairchild semiconductors 2n2222 micro electronics ME8003 BFY50
Contextual Info: Fairchild Sem iconductors S e m ic o n d ti^ H n Silicon Small Signal Transistors N PN Silicon High Speed Saturated Switching Transistors M etal Can T O IS REFERENCE T A B LE For medium speed - see General Purpose S ection. C H A R A C TE R IS TIC S @ 25"C
|
OCR Scan
|
bsx2035250hbsx2635251f+162n91435252d2n236935253b2n2369a35254x2n2222 ittbsy86me6002me6102bfy72ma8003fairchild semiconductors2n2222 micro electronicsme8003bfy50
|
PDF
|
HEP transistors
Abstract: 250/motorola hep hep 570
Contextual Info: 3260 n o r~ H Ö ULTRA FAST AND HYPER FAST EPION II AND SCHOTTKY RECTIFIERS H -3 >• 03 I m *u ö o m <c M n m t /i M iz o -j i *=< □3 LU û~ er □ t-1 b-1 O □ □ lb -1 ULTRA FAST EPION II RECTIFIERS CONTINUED ADC CASE piv 50A 30A 70A 100 A 75A DO-5
|
OCR Scan
|
10r5s12r5s15r5s5r5/61+97r5/6110r5/6112r5/6115r5/6110r5/3d12r5/3dhep transistors250/motorola hephep 570
|
PDF
|
hep 230 pnp
Abstract: Texas Instruments 2N2907 2N2904A TEXAS INSTRUMENTS Texas Instruments 2N2904a lr 2905 z hep 230 4151D
Contextual Info: TYPES 2N2904 THRU 2N2907, 2N2904A THRU 2N2907A P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 1 5 , M A R C H 1973 D ESIG NED FOR HIGH-SPEED, M EDIUM -PO W ER SW ITCH IN G A N D G EN ER A L PURPOSE A M P L IF IE R APPLICATIO N S High Breakdown Voltage Combined with Very Low Saturation Voltage
|
OCR Scan
|
2n29042n29072n2904a2n2907a+82n2221hep 230 pnptexas instruments 2n29072n2904a texas instrumentstexas instruments 2n2904alr 2905 zhep 2304151d
|
PDF
|
2n3706
Abstract: 2n3705 8T3704 2N3704 8T3702 A8T3705 A8T3704
Contextual Info: T Y P ES 2N3704 TH RU 2N3706, A8T3704 TH R U A8T3706 N-P-N S ILIC O N T R A N S IS T O R S B U L L E T IN N O . O L -S 7 3 1 1 7 7 1 , J A N U A R Y 1973 S IL E C T t T R A N S IS T O R S i • For Medium-Power Amplifiers, Class B Audio Outputs, Hi-Fi Drivers
|
OCR Scan
|
2n37042n3706a8t3704a8t3706+62im54518t37028t37032n3705a8t37058t3704
|
PDF
|
circuit diagram for switched reluctance motor for
Abstract: switched reluctance motor application note gate driver for h bridge mosfet mosfet reluctance motor driver ic driver mosfet 8 pin PWR-INT201PFI PWR-INT201TFI Logic Level Gate Drive mosfet full bridge control mosfet and driver circuit logic gate diagram of ic
Contextual Info: PWR-INT201 High-side Driver IC Floating Inputs Floating High-side Drive POWER INTEGRATIONS, INC. Product Highlights Floating Control Inputs • • Connects directly to P W R -IN T200 or PW R -IN T202 HSD outputs No external level translators or transform ers required
|
OCR Scan
|
pwr-int201pwr-int200pwr-int202pi-538-091191+12pi-536a-111391pi-537-d91191circuit diagram for switched reluctance motor forswitched reluctance motorapplication note gate driver for h bridge mosfetmosfet reluctance motor driveric driver mosfet 8 pinpwr-int201pfipwr-int201tfilogic level gate drive mosfetfull bridge control mosfet and driver circuitlogic gate diagram of ic
|
PDF
|
T1P147
Abstract: TEXAS INSTRUMENTS TIP145 B0738 transistor tip 35c TIP5530 TIP 122 transistor TIP142 T1P146 3055 5c pnp TIP141
Contextual Info: TYPES TIP145, TIP146, TIP147 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH T IP 1 4 0 , T IP 1 4 1 , TIP142 125 W at 25° C Case Temperature Min h p E 10-A Rated Collector Current 100 m j Reverse Energy Rating
|
OCR Scan
|
tip145tip146tip147tip140+10tip141tip142t1p146t1p147texas instruments tip145b0738transistor tip 35ctip5530tip 122 transistor3055 5c pnp
|
PDF
|
