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    HAT2116H Search Results

    HAT2116H Datasheets (3)

    Renesas Technology
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    HAT2116H
    Renesas Technology Silicon N-Channel MOS FET Original PDF 118.82KB 12
    HAT2116H
    Renesas Technology MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 15; RDS (ON) typ. (ohm) @10V: 0.0063; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0105]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1650; toff ( us) typ: 0.048; Package: LFPAK Original PDF 80.61KB 7
    HAT2116H-EL-E
    Renesas Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 30A LFPAK Original PDF 9
    SF Impression Pixel

    HAT2116H Price and Stock

    Renesas Electronics Corporation

    Renesas Electronics Corporation HAT2116H-EL-E

    POWER FIELD-EFFECT TRANSISTOR, 30A I(D), 30V, 0.0153OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HAT2116H-EL-E 2,277
    • 1 $3.27
    • 10 $3.27
    • 100 $3.27
    • 1000 $1.23
    • 10000 $1.23
    Buy Now

    HAT2116H Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    HAT2116H-EL-E

    Abstract: HAT2116H
    Contextual Info: HAT2116H Silicon N Channel Power MOS FET Power Switching REJ03G1189-0400 Previous: ADE-208-1575B Rev.4.00 Sep 07, 2005 Features • • • • Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS (on) = 6.3 mΩ typ. (at VGS = 10 V)


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    hat2116hrej03g1189-0400ade-208-1575bptzz0005da-a+1hat2116h-el-e PDF

    HAT2116H

    Contextual Info: HAT2116H Silicon N Channel Power MOS FET Power Switching ADE-208-1575B Z 3rd. Edition Aug. 2002 Features • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 6.3 mΩ typ. (at VGS = 10 V) Outline


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    hat2116hade-208-1575bd-85622d-85619 PDF

    BIHM65-H4R0

    Abstract: LM431BIM3 C1608X7R2A561K 12AQ3
    Contextual Info: ISL6740EVAL3 Application Note Specifications -11.8 -12VO, REG/DSL 14 OUTPUTS 200kHz/300kHz -12.0 -12.2 36VI/-12VO 48VI/-12VO 60VI/-12VO 72VI/-12VO -12.4 -12.6 • Input Voltage: 36V to 72V -12.8 • Outputs: 3.3V ±1% @ 4A 1.5V ±1% @ 7A 12V +3.5%/-10% (typical) @ 1.5A


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    isl6740eval3an1127isl6740isl6402+636vi/-12vo48vi/-12vobihm65-h4r0lm431bim3c1608x7r2a561k12aq3 PDF

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


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    02cz1002cz1102cz1202cz13+1502cz1502cz1602cz1802cz202cz20stf12a80bstc1026bstd1046btb04-600sapstf6a80bstd1040to510dhbstc1040to812njbtb15-700b PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


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    ao4405ao4407ao4408ao4409+16ao4410ao4411ao4413ao4415ao4422ao4700irf1830girf1830transistor irf1830gapm2054n equivalentapm2054nap85l02hap70n03s2sk3683ap70l02h2sk2696 PDF

    HAT2116H

    Abstract: HAT2116H-EL-E
    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    hat2116hhat2116h-el-e PDF

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


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    2sc5998c51392sc52472sc5907+162sd15042sj3612sk4392sk4942sk3349bcr5km-12l1002ds6020v4transistor bj 131-62sc 8550transistor 2sc1417hitachi 08122btransistor h9456030v42sc 805025aaj PDF

    PS2801-1-A

    Abstract: REG IC 48V IN 12V 10A OUT DPAK369C Vishay 470uF E 40748-LF1 31660 X7R ROHS .1uF smd cr7 HAT2116H-EL-E Midcom 7
    Contextual Info: ISL6740EVAL3Z Application Note AN1127.2 -11.8 -12VO, REG/DSL 14 OUTPUTS 200kHz/300kHz -12.0 -12.2 VOUT (V) The ISL6740EVAL3Z serves as a reference design for a 48V to ±12V, 3.3V and 1.5V isolated power supply. It utilizes an ISL6740 double-ended voltage mode controller in half bridge


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    isl6740eval3zan1127-12vo200khz/300khz+14isl6740isl640236vi/-12vo48vi/-12vops2801-1-areg ic 48v in 12v 10a outdpak369cvishay 470uf e40748-lf131660x7r rohs .1ufsmd cr7hat2116h-el-emidcom 7 PDF

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


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    rej01g0001-0400rjh3047rjh3077rjp3047+7rjh3047dpkrjp3049rjp6065rjp3053rjp3042smd code fx mosfetrjp6055 PDF

    SMD 47UF/SN74AHC138

    Contextual Info: Application Note 1826 Author: Richard Kroeger ISL9520EVAL1Z Evaluation Board Setup Procedure The ISL9520 is a highly integrated Narrow VDC regulator/battery charger controller for Li-ion/Li-ion polymer batteries. It has an SMBus interface and provides gate drive to


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    isl9520eval1zisl9520an1826smd 47uf/sn74ahc138 PDF

    lvc16244

    Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
    Contextual Info: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List


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    hd49323aha12134aha12141nha12155n+16ha12163ha12167fha12173ha12179fha12181fha12187flvc16244bc2402sk3174cbt1g125lv2gt14ahc32 hitachiha13557atransistor 2sc1162h8 hitachi programming manual30204sp PDF

    2SC 8550

    Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
    Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4


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    3sk3093sk3173sk318bb101c+16bb102cbb301cbb302cbb304cbb305cbb501c2sc 85506020v46030v4hitachi 08122b2sc 8050hitachi 08123btransistor h945h945transistor c 6030v42sk3545 PDF

    HAT2116H

    Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    d-85622d-85619hat2116h PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


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    rej16g0001-1900rjp3053rjp3063rjp6065+7rjp2557rjp3057rjh30rqj0301rjp3065rjk5020rjk2009 PDF

    1002ds

    Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
    Contextual Info: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5


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    24empbrc124etpbrc143etpbrc144ecm+16cr3km-12fs10km-6fs10vs-6fs16km-6fs16vs-6hat3017r1002ds4008zb2sc 9012mp 1009 es2sc 805020aaj-8h6020v42sc14172sc 8550cr3as PDF

    HAT2116H

    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    hat2116h PDF

    HAT1125H

    Abstract: ff 0401 HAT2270H LFPAK footprint Renesas rjk305 uPA2749UT1A RJK03C1DPB RJK305DPB UPA2802T1L UPA2807T1L
    Contextual Info: High performance PowerMOSFET for low voltage industrial and consumer applications www.renesas.eu 2010.09 To meet future design demands for high performance cost and space reductions the high performance PowerMOSFET provide design engineers with a head start. A wide voltage range VDSS = 12V.250V of high efficient


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    upa27xxut1ar07pf0002ed0100hat1125hff 0401+8hat2270hlfpak footprint renesasrjk305upa2749ut1arjk03c1dpbrjk305dpbupa2802t1lupa2807t1l PDF

    H7N1009MD

    Abstract: HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as
    Contextual Info: Power-Device Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors Products April, 2004 Standard Product Business Group Discrete and Standerd IC Business Unit Renesas Technology Corp. Power-Device Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility


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    cr3km-12cr6km-12cr8km-12o-220fn+16ot-89cr03am-16cr04am-12sc-59cr03am-12cr05am-12h7n1009mdhat2153rjtransistor fs10kmhat2180rpdiode h5nh7p1006mdimmobilizer antennacr3as-12hat1081rcr3as PDF