OC 140 germanium transistor
Abstract: HSD879 Germanium Transistor transistor h2a
Contextual Info: HI-SINCERITY Spec. No. : HA200207 Issued Date : 1996.07.15 Revised Date : 2005.02.15 Page No. : 1/4 MICROELECTRONICS CORP. HSD879 SILICON NPN EPITAXIAL TYPE TRANSISTOR Description For 1.5V and 3v electronic flash use. TO-92 Features • Charger-up time is about 1 ms faster than of a germanium transistor
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ha200207hsd879183oc217oc+4260ococ 140 germanium transistorgermanium transistortransistor h2a
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HA3669
Abstract: transistor ha3669 diode marking H2
Contextual Info: HI-SINCERITY Spec. No. : HA200210 Issued Date : 2000.11.01 Revised Date : 2005.01.20 Page No. : 1/4 MICROELECTRONICS CORP. HA3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HA3669 is designed for using in power amplifier applications, power switching
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ha200210ha3669183oc217oc+3260octransistor ha3669diode marking h2
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H431
Abstract: H431AA H431BA H431CA
Contextual Info: HI-SINCERITY Spec. No. : HA200216 Issued Date : 1998.04.08 Revised Date : 2002.08.27 Page No. : 1/4 MICROELECTRONICS CORP. H431AA/BA/CA AJDUSTABLE SHUNT REGULATOR Description The H431 series are three-terminal adjustable regulators with guaranteed thermal stability over applicable temperature ranges. The output voltage may be set to any value between VREF approximately
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ha200216h431aa/ba/ca50ppm/h431aa+3h431bah431cah431
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HSD471L
Contextual Info: HI-SINCERITY Spec. No. : HA200208 Issued Date : 2002.03.01 Revised Date : 2005.02.15 Page No. : 1/4 MICROELECTRONICS CORP. HSD471L NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD471L is designed for use in driver and output stage of audio frequency amplifier applications.
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HBF421
Abstract: ha2002
Contextual Info: HI-SINCERITY Spec. No. : HA200214 Issued Date : 2002.08.01 Revised Date : 2004.06.18 Page No. : 1/4 MICROELECTRONICS CORP. HBF421 PNP EPITAXIAL PLANAR TRANSISTOR Description Video B-class Power stages in TV-receivers TO-92 Absolute Maximum Ratings • Maximum Temperatures
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transistor h2a
Abstract: HBC517 H2A transistor Darlington transistor to 92 transistor BC 336
Contextual Info: HI-SINCERITY Spec. No. : HA200217 Issued Date : 2002.09.01 Revised Date : 2005.02.04 Page No. : 1/4 MICROELECTRONICS CORP. HBC517 NPN EPITAXIAL PLANAR TRANSISTOR Description General Purpose High Darlington Transistor TO-92 Absolute Maximum Ratings • Maximum Temperatures
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ha200217hbc517183oc217oc+5260octransistor h2ah2a transistordarlington transistor to 92transistor bc 336
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H66T19AA
Abstract: H66T19BA H66T32AA H66T32BA H66T68AA ha2002 64not
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HA200220 Issued Date : 1998.04.08 Revised Date : 2002.12.20 Page No. : 1/4 H66T19/32/68 Series Description The H66T19/32/68 series is a CMOS LSI designed for use in door bell, telephone and toy applications. It is an on-chip ROM program-med for
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ha200220h66t19/32/68h66t19/32-/6864-note+10h66t19xah66t32xah66t68xah66t19aah66t19bah66t32aah66t32bah66t68aaha200264not
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HMJE13001
Abstract: H2A transistor ha2002 transistor h2a
Contextual Info: HI-SINCERITY Spec. No. : HA200213 Issued Date : 2002.06.01 Revised Date : 2005.02.05 Page No. : 1/4 MICROELECTRONICS CORP. HMJE13001 NPN Triple Diffused Planar Type High Voltage Transistor Description The HMJE13001 is a medium power transistor designed for use in switching
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ha200213hmje13001183oc217oc+4260och2a transistorha2002transistor h2a
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HBT131XA
Abstract: marking code fu HBT131CA HBT131GA
Contextual Info: HI-SINCERITY Spec. No. : HA200209 Issued Date : 2002.04.01 Revised Date : 2003.03.13 Page No. : 1/4 MICROELECTRONICS CORP. HBT131XA Series Triac, Logic Level & Standard Description Passivated, sensitive gate triacs in a plastic envelope, intended for use in
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ha200209hbt131xahbt131cahbt131ga+1marking code fu
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HA200210
Abstract: HA3669 ha366 ha2002
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HA200210 Issued Date : 2000.11.01 Revised Date : 2002.04.18 Page No. : 1/3 HA3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HA3669 is designed for using in power amplifier applications, power switching application.
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MONOLITHIC SYSTEMS CORP
Abstract: HTIP112A o25c DARLINGTON TIN 1A AO125 transistor h2a ha2002
Contextual Info: HI-SINCERITY Spec. No. : HA200221 Issued Date : 2002.08.01 Revised Date : 2004.06.18 Page No. : 1/5 MICROELECTRONICS CORP. HTIP112A SILICON NPN POWER DARLINGTON TRANSISTOR • Monolithic Darlington Configuration • Integrated Antiparallel Collector-Emitter Diode
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ha200221htip112a183oc217oc+8240oc260ocmonolithic systems corpo25cdarlington tin 1aao125transistor h2aha2002
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H7805
Abstract: H431CA H431BA H431AA ha2002
Contextual Info: HI-SINCERITY Spec. No. : HA200216 Issued Date : 1998.04.08 Revised Date : 2003.05.13 Page No. : 1/5 MICROELECTRONICS CORP. H431AA/BA/CA AJDUSTABLE SHUNT REGULATOR Description The H431XA series are three-terminal adjustable regulators with guaranteed thermal stability over applicable temperature ranges. The output voltage
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ha200216h431aa/ba/cah431xa50ppmithout+5h431aah431bah431cah7805ha2002
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HLB120S
Contextual Info: HI-SINCERITY Spec. No. : HA200204 Issued Date : 2002.02.01 Revised Date : 2005.02.05 Page No. : 1/4 MICROELECTRONICS CORP. HLB120S NPN Triple Diffused Planar Type High Voltage Transistors Description The HLB120S is a medium power transistor designed for use in switching
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HBT131
Abstract: ha2002
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HA200209 Issued Date : 2002.04.01 Revised Date : 2002.04.15 Page No. : 1/4 HBT131 TRIACS LOGIC LEVEL Description Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications.
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HBT131GA
Abstract: HBT131CA HBT131XA low power triac ha2002
Contextual Info: HI-SINCERITY Spec. No. : HA200209 Issued Date : 2002.04.01 Revised Date : 2003.06.17 Page No. : 1/4 MICROELECTRONICS CORP. HBT131XA Series Triac, Logic Level & Standard Description Passivated, sensitive gate triacs in a plastic envelope, intended for use in
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ha200209hbt131xahbt131cahbt131ga+2low power triacha2002
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HSB647A
Abstract: HSD667A ha2002
Contextual Info: HI-SINCERITY Spec. No. : HA200201 Issued Date : 2002.01.01 Revised Date : 2005.02.14 Page No. : 1/4 MICROELECTRONICS CORP. HSB647A SILICON PNP EPITAXIAL Description Low Frequency Power Amplifier Complementary Pair With HSD667A. TO-92 Absolute Maximum Ratings
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