O25C Search Results

Contextual Info: HD74HC540,HD74HC541 The is a H D 7 4 H C 5 4 0 is an inverting bu ffer and the H D 7 4 H C 5 4 1 | Octal B u ffe rs /L in e Drivers with 3-state outputs ! PIN ARRANGEMENT non-inverting buffer. The 3-state control gate operates as a tw o -in p u t N O R such that if either

Contextual Info: Philips Components Data sheet status Prelim inary specification date of issue March 1991 R e p la ce s B U K 54 5-1 00 A /B PHILIPS N -channel en han cem en t m ode logic level field-effect power transistor in a plastic full-pack envelope. T h e device is intended for use in

Contextual Info: 128K x 36, 3.3V Synchronous IDT71V546 SRAM with ZBT Feature, Burst Counter and Pipelined Outputs i f l l > * * « « * : Features * 128K x 36 memory configuration, pipelined outputs clock cycle, and two cycles later Its associated data cycle occurs, be it

52HL

Abstract: ZD 103 ma 1M x 16 SRAM lfu 3sc w1A 74 IDT71T75602 IDT71T75802
Contextual Info: 512Kx36,1M x18 2.5V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ♦ 512K x 36,1M x 18 memory configurations ♦ Supports high performance system speed - 200 MHz 3 2 ns Clock-to-Data Access ♦ ZBT™ Feature - No dead cycles between write and read

T120 Switch

Abstract: BUK457-450B T0220AB FBR1
Contextual Info: N AMER PHILIPS/DISCRETE m S5 E D bia5 3 T31 0 0 E0 5 S0 3 • PowerMOS transistor BUK457-450B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

buk444

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

BU2532AW

Contextual Info: Philips Semiconductors Initial specification Silicon Diffused Power Transistor BU2532AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors.

cs1w-cn226

Abstract: OMRON PRO27 programming console omron sysmac cpm1 technical data nt2s-cn222-v1 OMRON PRO27 Operation Manual OMRON E5AF CPM2C-32CDTC-D pro27 OMRON Operation Manual CPM2C-32CDTM-D NT-CN221
Contextual Info: Compact PLC Series CPM2C Programmable Logic Contr. General The CPM2C Micro PLC is suitable as a controller for simple stand−alone machines, as well as a simple networked controller. One innovation is the new synchronisation instruction, which makes it possible to generate output pulse trains as a function of an input pulse

BUK457-450B

Abstract: T0220AB
Contextual Info: N AMER P H I L I P S / D I S C R E T E S5E m D bia53T31 00E05S0 3 • PowerMOS transistor BUK457-450B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

PG24104

Contextual Info: « IDT 128K x 36,256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs IDT71V3556S/XS IDT71V3558S/XS IDT71V3556SA/XSA / DT71V3558SA/XSA Features D escription ♦ 128K x 3 6 ,2 5 6 K x 18 memory configurations ♦ Supports high performance system speed - 200 MHz

transistor D 4515

Abstract: 100-P BUK556-60A A1730
Contextual Info: PHILIPS INTERNATIONAL bSE J> B 7110fl2b □□b42Sb Philips Semiconductors PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

Contextual Info: IDT71V547 128K X 36, 3.3V Synchronous SRAM with ZBT Feature, Burst Counter and Flow-Through Outputs Features * 128K x 36 memory configuration, flow-through outputs. 4 Supports high performance system speed - 95 MHz The outputs are flow-through no output data register . Output enable is

TRANSISTOR FS 10 TM

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK465-200A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK556-60A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in