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    HA3669

    Abstract: transistor ha3669 diode marking H2
    Contextual Info: HI-SINCERITY Spec. No. : HA200210 Issued Date : 2000.11.01 Revised Date : 2005.01.20 Page No. : 1/4 MICROELECTRONICS CORP. HA3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HA3669 is designed for using in power amplifier applications, power switching


    Original     		ha200210ha3669183oc217oc+3260octransistor ha3669diode marking h2 PDF

    HA200210

    Abstract: HA3669 ha366 ha2002
    Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HA200210 Issued Date : 2000.11.01 Revised Date : 2002.04.18 Page No. : 1/3 HA3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HA3669 is designed for using in power amplifier applications, power switching application.


    Original     		ha200210ha3669ha366ha2002 PDF