HA3669
Abstract: transistor ha3669 diode marking H2
Contextual Info: HI-SINCERITY Spec. No. : HA200210 Issued Date : 2000.11.01 Revised Date : 2005.01.20 Page No. : 1/4 MICROELECTRONICS CORP. HA3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HA3669 is designed for using in power amplifier applications, power switching
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ha200210ha3669183oc217oc+3260octransistor ha3669diode marking h2
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HA200210
Abstract: HA3669 ha366 ha2002
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HA200210 Issued Date : 2000.11.01 Revised Date : 2002.04.18 Page No. : 1/3 HA3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HA3669 is designed for using in power amplifier applications, power switching application.
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ha200210ha3669ha366ha2002 |
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XL1225 equivalent
Abstract: 2N3053 equivalent BF422 EQUIVALENT bc238 equivalent 2N6397 equivalent 2N5551 equivalent 2SB772 equivalent BC109 BC184 BC549 2sd880 equivalent BT169 equivalent
Contextual Info: Transistors, SCR, IC CROSS REFERENCE / EQUIVALENT TABLE R Cross Reference Table 1 / 13 INDUSTRY TYPE No. DC COMP. TYPE No. Cross Reference Table 2 / 13 PACKAGE INDUSTRY TYPE No. DC COMP. TYPE No. PACKAGE 2N2955 2N2955 TO-3 2SA952 2SA952 TO-92 2N3055 2N3055
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2n29552sa9522n30552sb1426+112n3417xl1225 equivalent2n3053 equivalentbf422 equivalentbc238 equivalent2n6397 equivalent2n5551 equivalent2sb772 equivalentbc109 bc184 bc5492sd880 equivalentbt169 equivalent
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