AO125 Search Results

MG100J6ES1

Abstract: MG100J6
Contextual Info: MG100J6ES1 GTR MODULE SILICON N CHANNEL IGBT TENTATIVE HIGH P O W E R S W I T C H I N G A P P L I C A T I O N S . MOTOR CONTROL APPLICATIONS. . 6 I G BTs are B u i l t I n t o 1 P a c k a g e . . Enhancement-Mode . Low Saturation Voltage : V CE s a t = 4 . 0 V ( M a x . )

Contextual Info: TOSHIBA {DI SC RE TE /OPT O} * • dF 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR I t o ^tssd 90D 16129 auibiai D t 7"-33~/3 TOSHIBA GTR MODULE MG50H1BS1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

Contextual Info: TOSHIBA {DIS CR ETE/ OP TO} »Ü ö / Z b o T O S H IB A D IS C R E T E / O P T O TOSHIBA "TG TOTTSSD 90D 16416 SEMICONDUCTOR DDlbMlb DT-3^-<37 TOSHIBA GTR MODULE M G 3 0 G 2 Y M 1 TECHNICAL DATA SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS.

2N3406

Abstract: 2N3055 plastic pic 08m 2N3055-6 2N305A 2N3055 2N3444 2N3680 2N3172 2N3055-7
Contextual Info: Ô1331Ô7 4ÔE D DDDDM3S SEMELABI 112 ISfILB SEMELAB L T » r * 2 . ? . ö / BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rel Code 2N3036 2N3053 2N3053L 2N305A 2N3055 2N3055/5 2N3055/6 2N3Q55/7 2N3055E 2N3055H 2N3109 2N3110 2N311A 2N3167 2N3168 2N3169