H994 Search Results

gu4 lamp base

Abstract: H973 length H9941-515 GZ6.35 395M 18 awg lampholder wire
Contextual Info: 4mm Base Lampholders H9941 Lamp Base Holder Maximum Ratings G-4, GU4 GZ4 MR-11 Ceramic 50 Volts 10 Amps 230°C Wire 18 AWG Stranded Teflon Insulation 140mm Wire Length H9941-515 510mm Wire Length H9941-M3 M-3 Threaded Mounting Inserts H9941-M3-395 M-3 Threaded

2502P

Abstract: CBHK741B019 F63TNR FDW2502P SI6926DQ
Contextual Info: SI6926DQ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

FDW2501NZ

Abstract: 2501NZ DIODE marking S4 06 2502P CBHK741B019 F63TNR FDW2502P
Contextual Info: FDW2501NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

2506p

Abstract: diode s4 53a 2506p marking FDW2502P 2502P CBHK741B019 F63TNR FDW2506P
Contextual Info: FDW2506P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

2502P

Abstract: CBHK741B019 F63TNR FDW2502P FDW2507NZ
Contextual Info: FDW2507NZ Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains

MOSFET TSSOP-8

Abstract: 2502P 2507N CBHK741B019 F63TNR FDW2502P FDW2507N Fairchild MOSFET TSSOP-8 dual n-channel
Contextual Info: FDW2507N Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains

DIODE S4 75a

Contextual Info: FDW2507NZ Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains

Si6435DQ

Abstract: 2502P CBHK741B019 F63TNR FDW2502P
Contextual Info: Si6435DQ 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage

FDW2502P

Abstract: 2502P CBHK741B019 F63TNR FDW252P
Contextual Info: FDW252P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

Contextual Info: HMC994LP5E v01.0314 Amplifiers - Linear & Power - SMT GaAs pHEMT MMIC POWER AMPLIFIER, DC - 28 GHz Typical Applications Features The HMC994LP5E is ideal for: P1dB Output Power: +27 dBm • Test Instrumentation Psat Output Power: +29 dBm • Microwave Radio & VSAT

Contextual Info: HMC994LP5E v00.0512 Amplifiers - lineAr & power - smT GaAs pHEMT MMIC POWER AMPLIFIER, DC - 28 GHz Typical Applications Features The HmC994lp5e is ideal for: p1dB output power: +27 dBm • Test Instrumentation psat output power: +29 dBm • Microwave Radio & VSAT

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

DIODE marking S4 06

Abstract: MOSFET TSSOP-8 S4 DIODE schottky 2502P CBHK741B019 F63TNR FDW2502P FDW6923
Contextual Info: FDW6923 P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It is combined with a low forward drop Schottky diode which is isolated from the

2502P

Abstract: CBHK741B019 F63TNR FDW2502P SI6966DQ Diode S4 55a
Contextual Info: SI6966DQ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

Contextual Info: FDW2507N Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains

Contextual Info: FDW258P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

Contextual Info: FDW262P 20V P-Channel PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain

2502P

Abstract: 2503N CBHK741B019 F63TNR FDW2502P FDW2503N
Contextual Info: FDW2503N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

l9938

Abstract: K9950 h9940 l9923 L9939 l9940 z9936 z9939 l9934 PQFP208 drawing
Contextual Info: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS October 2000 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT October 2000 TABLE OF CONTENTS Section I: Introduction Section II:

FDW2502P

Abstract: 2502P CBHK741B019 F63TNR FDW2520C
Contextual Info: FDW2520C Complementary PowerTrench MOSFET General Description Features This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for

Contextual Info: Si6953DQ Dual 20V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage

Contextual Info: FDW2508P Dual P-Channel 1.8 V Specified PowerTrench MOSFET General Description Features This P-Channel –1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

Contextual Info: Si6467DQ P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

Diode S4 55a

Contextual Info: FDW2503NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate