395M Search Results
395M Result Highlights (2)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| GCG31CR71E395MA01K | Murata Manufacturing Co Ltd | Ceramic Capacitor, Ceramic, 25V, 20% +Tol, 20% -Tol, X7R, 15% TC, 3.9uF, Surface Mount, 3216M/1206 | |||
| GCG31CR71E395MA01L | Murata Manufacturing Co Ltd | Ceramic Capacitor, Ceramic, 25V, 20% +Tol, 20% -Tol, X7R, 15% TC, 3.9uF, Surface Mount, 3216M/1206 |
395M Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 395MKP275KH |
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Capacitors - Film Capacitors - CAP FILM 3.9UF 10% 310VAC RADIAL | Original | 372.51KB | |||
| 395MKP275KJ |
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Capacitors - Film Capacitors - CAP FILM 3.9UF 10% 310VAC RADIAL | Original | 372.51KB |
395M Price and Stock
Bourns Inc TISP4395M3BJR-STVS Thyristor Bidirectional 2 Pins DO-214AA (SMB) Overvoltage Protector 395 V 1 Circuit |
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TISP4395M3BJR-S |
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TISP4395M3BJR-S | Tape & Reel | 16 Weeks | 12,000 |
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TISP4395M3BJR-S | Tape & Reel | 12,000 |
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TISP4395M3BJR-S | 1 |
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TISP4395M3BJR-S | Tape & Reel | 17 Weeks | 12,000 |
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Thomas & Betts 03-95MR7Q-2.0CABLE ASBLY 3-POLE RCPL ST |
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03-95MR7Q-2.0 |
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Bourns Inc TISP4395M3AJR-S |
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TISP4395M3AJR-S | Tape & Reel | 10,000 |
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Thomas & Betts 03-95MR7W-5.5CABLE ASBLY 3-POLE RCPL ST |
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03-95MR7W-5.5 |
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Thomas & Betts 03-95MPR7Q-60.0CABLE ASBLY 3-POLE RCPL ST |
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03-95MPR7Q-60.0 |
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395M Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: LTC2253/LTC2252 12-Bit, 125/105Msps Low Power 3V ADCs U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Sample Rate: 125Msps/105Msps Single 3V Supply 2.85V to 3.4V Low Power: 395mW/320mW 70.2dB SNR 88dB SFDR No Missing Codes Flexible Input: 1VP-P to 2VP-P Range |
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ltc2253/ltc225212-bit125/105msps125msps/105msps+5 | |
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Contextual Info: SSM6L11TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L11TU High Speed Switching Applications • Optimum for high-density mounting in small packages • Low ON-resistance Q1: RDS ON = 395m Q2: RDS(ON) = 430m (max) (@VGS = 1.8 V) (max) (@VGS = -2.5 V) |
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ssm6l11tu | |
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Contextual Info: SSM6L10TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L10TU High Speed Switching Applications • Low on-resistance Q1: Ron = 395mΩ max (@VGS = 1.8 V) Q2: Ron = 980mΩ (max) (@VGS = -1.8 V) Unit: mm 2.1±0.1 1.7±0.1 Rating Unit Drain-Source voltage |
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ssm6l10tu | |
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Contextual Info: SSM6K25FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII SSM6K25FE High Speed Switching Applications • Optimum for high-density mounting in small packages 1.6±0.05 • Low on-resistance: 1.2±0.05 Ron = 395mΩ (max) (@VGS = 1.8 V) |
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ssm6k25fe | |
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Contextual Info: SSM6N25TU TOSHIBA Field Effect Transistor Tentative Silicon N Channel MOS Type U-MOSIII SSM6N25TU Switching Applications Small package (2in1) • Low on resistance: 2.0±0.1 1.7±0.1 Ron = 395mΩ (max) (@VGS = 1.8 V) Symbol Rating Unit Drain-Source voltage |
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ssm6n25tu | |
SSM6L10TUContextual Info: SSM6L10TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L10TU High Speed Switching Applications • Low on-resistance Q1: Ron = 395mΩ max (@VGS = 1.8 V) Q2: Ron = 980mΩ (max) (@VGS = -1.8 V) Unit: mm 2.1±0.1 1.7±0.1 Rating Unit Drain-Source voltage |
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ssm6l10tu | |
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Contextual Info: SSM6L11TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L11TU High Speed Switching Applications • Optimum for high-density mounting in small packages • Low ON-resistance Q1: RDS ON = 395mΩ (max) (@VGS = 1.8 V) Q2: RDS(ON) = 430mΩ (max) (@VGS = -2.5 V) |
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ssm6l11tu | |
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Contextual Info: SSM6K25FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII SSM6K25FE High Speed Switching Applications • Optimum for high-density mounting in small packages 1.6±0.05 • Low on-resistance: 1.2±0.05 Ron = 395mΩ (max) (@VGS = 1.8 V) |
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ssm6k25fe | |
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Contextual Info: SSM6N25TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII SSM6N25TU High Speed Switching Applications Unit: mm Low on-resistance: 2.1±0.1 Ron = 395mΩ (max) (@VGS = 1.8 V) 1.7±0.1 Characteristics Symbol Rating Unit Drain-Source voltage |
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ssm6n25tu | |
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Contextual Info: SSM6L10TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L10TU High Speed Switching Applications • Low on-resistance Q1: Ron = 395mΩ max (@VGS = 1.8 V) Q2: Ron = 980mΩ (max) (@VGS = -1.8 V) Unit: mm 2.1±0.1 1.7±0.1 Unit Drain-Source voltage |
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ssm6l10tu | |
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Contextual Info: SSM6L11TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type Tentative SSM6L11TU Switching Applications Low on resistance Unit: mm Q1: Ron = 395mΩ max (@VGS = 1.8 V) Q2: Ron = 430mΩ (max) (@VGS = -2.5 V) 2.0±0.1 1.7±0.1 Rating Unit Drain-Source voltage |
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ssm6l11tu-20are | |
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Contextual Info: SSM6L10TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type Tentative SSM6L10TU Switching Applications Low on resistance Unit: mm Q1: Ron = 395mΩ max (@VGS = 1.8 V) Q2: Ron = 980mΩ (max) (@VGS = -1.8 V) 2.0±0.1 1.7±0.1 Rating Unit Drain-Source voltage |
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ssm6l10tu-20are | |
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Contextual Info: SSM6K25FE TOSHIBA Field Effect Transistor Tentative Silicon N Channel MOS Type U-MOSIII SSM6K25FE Switching Applications Unit: mm 1.6±0.05 Small package • Low on resistance: 1.2±0.05 Ron = 395mΩ (max) (@VGS = 1.8 V) Rating Unit Drain-Source voltage |
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ssm6k25fe | |
SSM6L10TU
Abstract: SSM6L10
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ssm6l10tussm6l10 | |
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Contextual Info: SSM6L11TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L11TU High Speed Switching Applications • Optimum for high-density mounting in small packages • Low on-resistance Q1: Ron = 395mΩ max (@VGS = 1.8 V) Q2: Ron = 430mΩ (max) (@VGS = -2.5 V) |
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ssm6l11tu | |
SSM6K25FEContextual Info: SSM6K25FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII SSM6K25FE High Speed Switching Applications Unit: mm Optimum for high-density mounting in small packages • Low on-resistance: 1.6±0.05 1.2±0.05 Ron = 395mΩ (max) (@VGS = 1.8 V) |
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ssm6k25fe | |
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Contextual Info: LTC2251/LTC2250 10-Bit, 125/105Msps Low Noise 3V ADCs U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Sample Rate: 125Msps/105Msps Single 3V Supply 2.85V to 3.4V Low Power: 395mW/320mW 61.6dB SNR 85dB SFDR No Missing Codes Flexible Input: 1VP-P to 2VP-P Range |
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ltc2251/ltc225010-bit125/105msps125msps/105msps+5 | |
SSM6L11TU
Abstract: MOS 3020
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ssm6l11tumos 3020 | |
SSM6L11TUContextual Info: SSM6L11TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L11TU High Speed Switching Applications • Optimum for high-density mounting in small packages • Low on-resistance Q1: Ron = 395mΩ max (@VGS = 1.8 V) Q2: Ron = 430mΩ (max) (@VGS = -2.5 V) |
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ssm6l11tu | |
SSM6K25FEContextual Info: SSM6K25FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII SSM6K25FE High Speed Switching Applications • Optimum for high-density mounting in small packages 1.6±0.05 • Low on-resistance: 1.2±0.05 Ron = 395mΩ (max) (@VGS = 1.8 V) |
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ssm6k25fe | |
SSM6N25TUContextual Info: SSM6N25TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII SSM6N25TU High Speed Switching Applications Optimum for high-density mounting in small packages • Low on-resistance: Unit: mm Ron = 395mΩ (max) (@VGS = 1.8 V) 2.1±0.1 Ron = 190mΩ (max) (@VGS = 2.5 V) |
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ssm6n25tu39lled | |
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Contextual Info: SSM6L11TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L11TU High Speed Switching Applications • Optimum for high-density mounting in small packages • Low on-resistance Q1: Ron = 395mΩ max (@VGS = 1.8 V) Q2: Ron = 430mΩ (max) (@VGS = -2.5 V) |
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ssm6l11tu | |
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Contextual Info: SSM6N25TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII SSM6N25TU High Speed Switching Applications Unit: mm Optimum for high-density mounting in small packages • Low on-resistance: 2.1±0.1 Ron = 395mΩ (max) (@VGS = 1.8 V) 1.7±0.1 |
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ssm6n25tu | |
SSM6N25TUContextual Info: SSM6N25TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII SSM6N25TU High Speed Switching Applications Unit: mm Optimum for high-density mounting in small packages • Low on-resistance: 2.1±0.1 Ron = 395mΩ (max) (@VGS = 1.8 V) 1.7±0.1 |
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ssm6n25tu | |