H3 DIODE Search Results

Contextual Info: http://www.sanken-ele.co.jp SANKEN ELECTRIC SJPJ-H3 Mar. 2008 Schottky Barrier Rectifier General Description Package SJPJ-H3 is a Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. Applications DC-DC converters

sanken power transistor

Contextual Info: http://www.sanken-ele.co.jp SANKEN ELECTRIC SJPJ-H3 Mar. 2008 Schottky Barrier Rectifier General Description Package SJPJ-H3 is a Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. Applications ●DC-DC converters

Contextual Info: SANKEN ELECTRIC CO., LTD. SJPX-H3 1. Scope The present specifications shall apply to an SJPX-H3. 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification 3. Flammability UL94V-0 Equivalent 060509 1／5 61426-01 SANKEN ELECTRIC CO., LTD.

DP5Z1MM8NKH3

Abstract: 00FIH
Contextual Info: 1Mx8, 120 - 200ns, STACK/PGA 30A189-01 A 8 Megabit FLASH EEPROM DP5Z1MM8NKY/I3/H3/J3/DP5Z1MX8NKA3 PRELIMINARY DESCRIPTION: The DP5Z1MM8NKY/I3/H3/J3/DP5Z1MX8NKA3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’

DP5Z1MM16PH3

Abstract: DP5Z1MM16PI3 DP5Z1MM16PJ3 DP5Z1MM16PY DP5Z1MW16PA3
Contextual Info: 1Mx16, 120 - 200ns, STACK/PGA 30A162-21 A 16 Megabit FLASH EEPROM DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3 PRELIMINARY DESCRIPTION: The DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’

30A18

Contextual Info: 8 Megabit FLASH EEPROM D EN SE-PA C DP5Z1MM8NKY/Í3/H3/J3/DP5Z1MX8NKA3 M I C K OS V S T \í M S PRELIM INARY D E SC R IP T IO N : The D P5Z1MM8NKY/Í3/H3/J3/DP5Z1MX8NKA3 "S L C C " devices are a revolutionary new memory subsystem using Dense-Pac Microsystems'

30100

Abstract: PBYR30100PT RYE121 PBYR301OOPT
Contextual Info: 4 H3 3 1 WK DISCRETE SEMICONDUCTORS ¡friE E T PBYR301 OOPT series Schottky Barrier rectifier diodes Product specification File under Discrete Semiconductors, SC02 August 1992 Philips Semiconductors PHILIPS bbS3T31 00330GM 137 This Material Copyrighted By Its Respective Manufacturer

Contextual Info: SIEMENS Silicon Switching Diode BAL 74 • For high-speed switching Type Marking Ordering Code tape and reel BAL74 JCs Q62702-A718 Pin Configuration Package1) SOT-23 o- H3- o 3 2 EH M 0001 Maximum Ratings Parameter Symbol Values Unit V

Contextual Info: OXLEY H3 CAPTION INDICATOR LAMPS FEATURES • alphanumeric captions available character or background illumination • reduces need for expensive front panel engraving • improves operator information • IlluW custom engraving available - customer logos, corporate

secos gmbh

Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3

LA3 DR2

Abstract: vn 530 sp 31 x 132 THOMSON-CSF CCD 414 LEM DIODE tsc 429 7896A
Contextual Info: TD2bô?2 00G223Ö h3^ • - TH 7896A- H _ High data rate version FULL FIELD CCD IMAGE SENSOR 1024x1024 PIXELS ■ Optimized for high data rate applications: minimum readout time = 28 ms (4 outputs).

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers

Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet Light Emitting Diode 5 mm Round LED,T-1 3/4 333-2SURC/H3/OMA-E12 Features ․Popular T-1 3/4 diameter package. ․Choice of various viewing angles. ․Available on tape and reel. ․Reliable and robust.

SMV1204-99A

Abstract: smv1204 J016 SMV1204-99 SMV1204-99B varactor alpha
Contextual Info: ALPHA HD/ SEMICONDUCTOR KJE » . 0 5 i s , H3 „ „ „ „ „ 3 ^ Hyperabrupt Varactor Diode Outline Drawing Features: • ■ ■ VHF to UHF & L Band Operation Low Series Resistance Surface Mountable SOT-23 Package Outline - Single diode SMV1204-99A

Contextual Info: April 4, 2013 C8051F41x Revisions A-F Errata Hardware Errata Erratum # H1 H2 H3 Title XTLVLD is Incorrect Port Pin Overvoltage Clock Glitch During the Clock Multiplier Initialization Sequence Impact Minor Minor Minor Status Affected Revisions Fixed Revision

74fct245

Contextual Info: NATIONAL SEMICOND LOGIC blE ]> • bS01125 0D7S371 H3*) m CM EHNational t - s* - ? * * / ÆM Semiconductor 54FCT/74FCT245 Octal Bidirectional Transceiver with TRI-STATE Inputs/Outputs General Description Features The 'FCT245 contains eight non-inverting bidirectional buff­

flatiron

Abstract: data base job led lifespan electric field
Contextual Info: ARPL-P200K3C-H3 940nm, 700mA Features • Substrate: Aluminum Plate • High intensity, Long life-span Applications • • • • Free air transmission system Infrared remote control units with high power requirement Smoke detector Infrared applied system

A315A

Abstract: A315B A315 A315F A315G
Contextual Info: HARRIS SEMICON» SECTOR bflE D 33 HB H3Ü2271 A315 Series 3A, 50V - 200V Ultrafast Diodes December 1993 Features • 0050333 0=10 H H A S Package AL-4 Glass Passivated Junction TOP VIEW • Ultra-Fast Recovery Times • Low Forward Voltage Drop, High-Current Capability

Vishay diodes code marking

Abstract: marking code vishay label VISHAY MARKING CODE Vishay SOT23 MARKING F5 Vishay DaTE CODE marking code vishay MARKING CODE f5 SOD-523 DO-219AB marking CODE n5 marking l4 sot-23
Contextual Info: VISHAY Vishay Semiconductors Marking of Diodes View from top View from top R9 F5 Date code: R = Year 9 = Month Type code Cathode band Type code Pin 1 18919 18904 Figure 4. SOD-323 Figure 1. LLP75-3A, LLP75-3B FC View from top N5 H3 Cathode Date code: N = Year

diode DB3 C531

Abstract: DB3 C531 diode db3 c432 MST9131 DB3 C502 mstar scaler DB3 C432 diode DB3 C535 rtl8201 schematic circuit RTL8201 Design
Contextual Info: 5 X A X X_FM X X_FM 2 1 +3VS H25 C266 C552 C704 C_NC C_NC C_NC H8 HOLES_S276D118 H16 HOLES_S276D118 H2 HOLES_S276D118 HOLES_S276D118 C150 C563 C78 C163 C_NC C_NC C_NC C_NC +1.8VS H22 H15 HOLES_S276D118 HOLES_S276D118 H3 HOLES_S276D118 H24 H12 HOLES_S276D118

BUZ14

Abstract: D1267 D0145 transistor buz L11F
Contextual Info: BUZ14 PowerMOS transistor N A 1ER PHILIPS/DISCRETE ObE D btiSBTBl D0mS77 4 T-51 H3 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

F5 marking code

Abstract: MARKING CODE f5 marking code vishay label SMF DO-219AB Vishay diodes code marking Vishay DaTE CODE DO-219AB marking L4 SOD123 SOD-523 DO-219AB SOD-80 sod123
Contextual Info: Vishay Semiconductors Marking of Diodes View from top View from top R9 F5 Date code: R = Year 9 = Month Type code Cathode band Type code Pin 1 18919 Figure 4. SOD-323 18904 Figure 1. LLP75-3A, LLP75-3B FC View from top N5 H3 Cathode Date code: N = Year 5 = Month

Contextual Info: SKT 50 THYRISTOR BRIDGE,SCR,BRIDGE Stud Thyristor Line Thyristor SKT 50 Features # $%&'% * '%(+, *+-% .)(/ 0,+-# )1-2,+(3& 4/&%+5%5 -(25 678 9: 3& <=> ?@ABC: 61(%&1+()31+, -(+15+&5 *+-% # Typical Applications* # DE '3(3& *31(&3, # # # 1) F%G 0G H3& '+*/)1% (33,-I

Contextual Info: 40 Watt 2.0x2.0 Inch Package H3 2:1 Input Range o Efficiency up to 90% o 350 kHz Switching Frequency o 2:1 Input Range o Regulated Single Output o Continuous Short Circuit Protection o Six-Sided Metal Case MODEL NUMBER INPUT VOLTAGE 40H3RS24W3.3LC 40H3RS24W5LC