GS88236B Search Results

GS88218

Abstract: GS88236
Contextual Info: Preliminary GS88218/36B-11/11.5/100/80/66 119-Bump BGA Commercial Temp Industrial Temp MHz 512K x 18, 256K x 36 ByteSafe 100 MHz–66 3.3 V VDD 8Mb S/DCD Sync Burst SRAMs 3.3 V and 2.5 V I/O Features on every cycle with no degradation of chip performance.

GS88218BB-150V

Abstract: GS88218BB-200V GS88218BB-250V
Contextual Info: GS88218/36B B/D -xxxV 119- and 165-Bump BGA Commercial Temp Industrial Temp 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Single/Dual Cycle Deselect selectable • IEEE 1149.1 JTAG-compatible Boundary Scan

Contextual Info: GS88218/36BB/D-333/300/250/200/150 119- and 165-Bump BGA Commercial Temp Industrial Temp 333 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation

GS88218BB-150V

Abstract: GS88218BB-200V GS88218BB-250V
Contextual Info: GS88218/36B B/D -xxxV 119- and 165-Bump BGA Commercial Temp Industrial Temp 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Single/Dual Cycle Deselect selectable • IEEE 1149.1 JTAG-compatible Boundary Scan

Contextual Info: GS88218/36BB/D-333/300/250/200/150 119- and 165-Bump BGA Commercial Temp Industrial Temp 333 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation

K7A803609B-PC25

Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
Contextual Info: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15

IS61LF51232-8

Abstract: IS61LV25616AL-8TL IS61LF51232 IS61LV5128L-10T GS71116AU-10E 167ML IS61NLP25636A-200TQL IS61QDB22M36 IS61LPS51236-150B IS61LV5128L-12T
Contextual Info: ISSI * - Tie down extra four I/Os with resistor + - Tie down extra two I/Os with resistor # - Connect pin 14 FT pin to Vss IS61DDB22M36-167M3 IS61DDB22M36-167M3L IS61DDB22M36-167ML IS61DDB22M36-200M IS61DDB22M36-200M3 IS61DDB22M36-200M3L IS61DDB22M36-200ML

GS88218B

Abstract: GS88236B
Contextual Info: GS88218/36BB/D-250/225/200/166/150/133 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs 119- and 165-Bump BGA Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Single/Dual Cycle Deselect selectable

GS88218BB-150V

Abstract: GS88218BB-200V GS88218BB-250V
Contextual Info: GS88218/36B B/D -xxxV 119- and 165-Bump BGA Commercial Temp Industrial Temp 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Single/Dual Cycle Deselect selectable • IEEE 1149.1 JTAG-compatible Boundary Scan

GS88218B

Abstract: GS88218BB-250 GS88218BB-300 GS88218BB-333 GS88236B selection GS88236BGD-200I
Contextual Info: GS88218/36BB/D-333/300/250/200/150 119- and 165-Bump BGA Commercial Temp Industrial Temp 333 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation

Contextual Info: GS88218/36BB/D-333/300/250/200/150 333 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs Functional Description es ig n SCD and DCD Pipelined Reads The GS88218/36B is a SCD Single Cycle Deselect and DCD

IC61LV6416-10TG

Abstract: GS74116AGP-10 GS71108AGJ-8 GS72116AGP-10 IC61LV5128-10KG GS71116AGJ-8 GS74116AGP-8 IC61LV12816-10BG QMR-224 GS72116AGP-12
Contextual Info: ICSI Add "I" at the end of each part number GSI and ICSI IC61LV25616-10BG GS74116AGX-10 for Industrial Temperature, except for ICSI IC61LV25616-10K GS74116AJ-10 part numbers that are Lead Free. IC61LV25616-10KG GS74116AGJ-10 IC61LV25616-10T GS74116ATP-10

MT58L512L18PS-7.5

Abstract: MT58L256L18D1T-10 MT58L256L32PF-10 MT55V512V36PT-7.5 GS8162Z36BB-200 GS816032BT-150 MT55L512Y36PF-7.5 MT55L256L36FT-10 MT58L256L36FS-10 MT58L64L32PT-7.5
Contextual Info: MICRON * - Tie down extra four I/Os with resistor + - Tie down extra two I/Os with resistor # - Connect pin 14 FT pin to Vss MT55L128V32P1B-6 MT55L128V32P1B-7.5 MT55L128V32P1T-10 MT55L128V32P1T-6 MT55L128V32P1T-7.5 MT55L128V36F1B-10 MT55L128V36F1B-11 MT55L128V36F1B-12

IDT71V416L15PH

Abstract: GS881Z36BGD-150 GS74104AGJ-12 GS882Z36BGB-200 GS8161Z36BGD-250 IDT71V67802S133BGG GS84036AGT-100 IDT71V416L15PHG GS88236BGB-200 GS881Z36BGD-200
Contextual Info: IDT For Industrial Temp: Add "I" at the end of IDT and GSI part number. IDT71P72604S200BQ IDT71P72604S200BQG IDT71P72604S250BQ IDT71P72604S250BQG IDT71P72804S167BQ IDT71P72804S167BQG IDT71P72804S200BQ IDT71P72804S200BQG IDT71P72804S250BQ IDT71P72804S250BQG

CY7C1338-100AXC

Abstract: gvt7164d32q-6 CY7C1049BV33-12VXC CY7C1363C-133AC CY7C1021DV33-12ZXC CY7C1460AV25-200AXC CY7C1338G-100AC CY7C1041V33-12ZXC CY7C1460V33-200AXC CY7C1021DV33-10ZXC
Contextual Info: CYPRESS / GALVANTECH # - Connect pin 14 FT pin to Vss CY7C1019BV33-15VC GS71108AJ-12 & - Does not support 1.8V I/O CY7C1019BV33-15VXC GS71108AGJ-12 * - Tie down extra four I/Os with resistor CY7C1019BV33-15ZC GS71108ATP-12 CY7C1019BV33-15ZXC GS71108AGP-12

Contextual Info: GS88218/36B B/D -xxxV 250 MHz–150 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs Functional Description n es ig N ot R ec om m en d ed fo Applications The GS88218/36B(B/D)-xxxV is a 9,437,184-bit high performance synchronous SRAM with a 2-bit burst address

Contextual Info: Preliminary GS88218/36B-11/11.5/100/80/66 119-Bump BGA Commercial Temp Industrial Temp MHz 512K x 18, 256K x 36 ByteSafe 100 MHz–66 3.3 V VDD 8Mb S/DCD Sync Burst SRAMs 3.3 V and 2.5 V I/O 1.14 9/2000Features on every cycle with no degradation of chip performance.

GS88218B

Abstract: GS88218BB-250 GS88218BB-300 GS88218BB-333 GS88236B GS88236
Contextual Info: GS88218/36BB/D-333/300/250/200/150 119- and 165-Bump BGA Commercial Temp Industrial Temp 333 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation

Contextual Info: Preliminary GS88218/36B-11/11.5/100/80/66 119-Bump BGA Commercial Temp Industrial Temp MHz 512K x 18, 256K x 36 ByteSafe 100 MHz–66 3.3 V VDD 8Mb S/DCD Sync Burst SRAMs 3.3 V and 2.5 V I/O Features with the Linear Burst Order LBO input. The Burst function need not

GS8673EQ

Abstract: SIGMA SigmaQuad-IIIe GS8673ED36 5502M GS8322Z36 GS816032 GS8171DW GS8673ET36 GS8673ED18
Contextual Info: Untitled3.fm Page 1 Tuesday, March 30, 2010 10:58 AM Untitled4.fm Page 1 Tuesday, March 30, 2010 11:08 AM SigmaQuad_2010_0408.fm Page 3 Thursday, April 15, 2010 11:44 AM SigmaQuad-IIIe SRAMs 72Mb SigmaQuad-IIIe+ Config GS8673ED37Ayy-### GS8673ED19Ayy-### 2M x 36

GS8640Z36

Abstract: GS840Z18A GS816032 GS8342T36 GS8662Q18
Contextual Info: Untitled3.fm Page 1 Wednesday, September 10, 2008 12:03 PM toc.fm Page 1 Wednesday, September 10, 2008 11:05 AM Untitled1.fm Page 1 Wednesday, September 10, 2008 11:32 AM SigmaQuad_new_20080904.fm Page 4 Wednesday, September 10, 2008 11:04 AM SigmaQuad/ CIO/SIO