1999J Search Results

GS88218

Abstract: GS88236
Contextual Info: Preliminary GS88218/36B-11/11.5/100/80/66 119-Bump BGA Commercial Temp Industrial Temp MHz 512K x 18, 256K x 36 ByteSafe 100 MHz–66 3.3 V VDD 8Mb S/DCD Sync Burst SRAMs 3.3 V and 2.5 V I/O Features on every cycle with no degradation of chip performance.

s6307

Abstract: BTS640S2 Q67060-S6307-A5 Q67060-S6307-A6 Q67060-S6307-A7 Siemens rectifier type 6510 scr values P-TO220-7-12
Contextual Info: PROFET BTS 640 S2 Smart Sense High-Side Power Switch Features • Short circuit protection • Current limitation • Proportional load current sense • CMOS compatible input • Open drain diagnostic output • Fast demagnetization of inductive loads • Undervoltage and overvoltage shutdown with

36T-11

Abstract: GS881E18
Contextual Info: Preliminary GS881E18/36T-11/11.5/100/80/66 100-Pin TQFP Commercial Temp Industrial Temp MHz 512K x 18, 256K x 36 ByteSafe 100 MHz–66 3.3 V VDD 8Mb Sync Burst SRAMs 3.3 V and 2.5 V I/O 1.10 9/2000Features counter may be configured to count in either linear or

Contextual Info: Preliminary GS880F18/36T-10/11/11.5/12/14 100 Pin TQFP Commercial Temp Industrial Temp 512K x 18, 256K x 36 8Mb Sync Burst SRAMs Features • Flow through mode operation. • 3.3V +10%/-5% Core power supply. • 2.5V or 3.3V I/O supply. • LBO pin for linear or interleaved burst mode.

siemens functional profet

Abstract: diode 736 P-DSO-20-9
Contextual Info: PROFET BTS 736 L2 Smart High-Side Power Switch Two Channels: 2 x 40mΩ Status Feedback Product Summary Operating Voltage Vbb on Active channels On-state Resistance RON Nominal load current IL(NOM) Current limitation IL(SCr) Package 4.75.41V one two parallel

Contextual Info: Preliminary GS880F18/36T-10/11/11.5/12/14 100 Pin TQFP Commercial Temp Industrial Temp 512K x 18, 256K x 36 8Mb Sync Burst SRAMs Features 10ns - 14ns 3.3V VDD 3.3V & 2.5V I/O broadest access to multiple vendor sources. Boards designed with FT pin pads tied low may be stuffed with GSI’s Pipeline/Flow through

Contextual Info: Preliminary GS88118/36T-11/11.5/100/80/66 100-Pin TQFP Commercial Temp Industrial Temp MHz 512K x 18, 256K x 36 ByteSafe 100 MHz–66 3.3 V VDD 8Mb Sync Burst SRAMs 3.3 V and 2.5 V I/O Features be used. New addresses can be loaded on every cycle with no

Contextual Info: Preliminary GS881E18/36T-11/11.5/100/80/66 100-Pin TQFP Commercial Temp Industrial Temp MHz 512K x 18, 256K x 36 ByteSafe 100 MHz–66 3.3 V VDD 8Mb Sync Burst SRAMs 3.3 V and 2.5 V I/O Features be used. New addresses can be loaded on every cycle with no

Contextual Info: Preliminary GS88218/36B-11/11.5/100/80/66 119-Bump BGA Commercial Temp Industrial Temp MHz 512K x 18, 256K x 36 ByteSafe 100 MHz–66 3.3 V VDD 8Mb S/DCD Sync Burst SRAMs 3.3 V and 2.5 V I/O 1.14 9/2000Features on every cycle with no degradation of chip performance.

GS880F18T-11

Abstract: tqfp 64 thermal resistance
Contextual Info: Preliminary GS880F18/36T-11/11.5/12/14/18 100-Pin TQFP Commercial Temp Industrial Temp 512K x 18, 256K x 36 8Mb Sync Burst SRAMs Features 11 ns–18 ns 3.3 V VDD 3.3 V and 2.5 V I/O RAMS should be designed with V SS connected to the FT pin location to ensure the broadest access to multiple vendor

Contextual Info: Preliminary GS88118/36T-11/11.5/100/80/66 100-Pin TQFP Commercial Temp Industrial Temp MHz 512K x 18, 256K x 36 ByteSafe 100 MHz–66 3.3 V VDD 8Mb Sync Burst SRAMs 3.3 V and 2.5 V I/O 1.11 9/2000Features counter may be configured to count in either linear or

Contextual Info: Preliminary GS88218/36B-11/11.5/100/80/66 119-Bump BGA Commercial Temp Industrial Temp MHz 512K x 18, 256K x 36 ByteSafe 100 MHz–66 3.3 V VDD 8Mb S/DCD Sync Burst SRAMs 3.3 V and 2.5 V I/O Features with the Linear Burst Order LBO input. The Burst function need not