GS8161E36 Search Results

GS8161E36BGD-250

Contextual Info: Preliminary GS8161E18B T/D /GS8161E32B(D)/GS8161E36B(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation

GS8161E18AT-300

Abstract: 36AD Boundary Scan JTAG Logic
Contextual Info: Preliminary GS8161E18A T/D /GS8161E32A(D)/GS8161E36A(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation

Contextual Info: GS8161E18D GT/D /GS8161E32D(D)/GS8161E36D(GT/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 1M x 18, 512K x 32, 512K x 36 18Mb SyncBurst SRAMs Features Linear Burst Order (LBO) input. The Burst function need not

GS8161E18B

Abstract: GS8161E18BT-150 GS8161E18BT-200 GS8161E18BT-250 GS8161E36B QC2004
Contextual Info: Preliminary GS8161E18B T/D /GS8161E32B(D)/GS8161E36B(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation

Contextual Info: GS8161E18D GT/D /GS8161E32D(D)/GS8161E36D(GT/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 1M x 18, 512K x 32, 512K x 36 18Mb SyncBurst SRAMs Features Linear Burst Order (LBO) input. The Burst function need not

Contextual Info: GS8161E18B T/D /GS8161E32B(D)/GS8161E36B(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 250 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation

Contextual Info: GS8161E18D GT/D /GS8161E32D(D)/GS8161E36D(GT/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 1M x 18, 512K x 32, 512K x 36 18Mb SyncBurst SRAMs Features Linear Burst Order (LBO) input. The Burst function need not

Contextual Info: GS8161E18D GT/D /GS8161E32D(D)/GS8161E36D(GT/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 1M x 18, 512K x 32, 512K x 36 18Mb SyncBurst SRAMs Features Linear Burst Order (LBO) input. The Burst function need not

GS8161E36B

Abstract: GS8161E18B GS8161E18BT-150 GS8161E18BT-200 GS8161E18BT-250
Contextual Info: GS8161E18B T/D /GS8161E32B(D)/GS8161E36B(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation

Contextual Info: Preliminary GS8161E18D GT/D /GS8161E32D(D)/GS8161E36D(GT/D) 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp Features Linear Burst Order (LBO) input. The Burst function need not

QC2004

Abstract: GS8161E18B GS8161E18BT-150 GS8161E18BT-200 GS8161E18BT-250 GS8161E36B
Contextual Info: GS8161E18B T/D /GS8161E32B(D)/GS8161E36B(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation

Contextual Info: GS8161E18B T/D /GS8161E32B(D)/GS8161E36B(T/D) 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation • IEEE 1149.1 JTAG-compatible Boundary Scan • 2.5 V or 3.3 V +10%/–10% core power supply

GS8161E18B

Abstract: GS8161E18BT-150 GS8161E18BT-200 GS8161E18BT-250 GS8161E36B
Contextual Info: GS8161E18B T/D /GS8161E32B(D)/GS8161E36B(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation

Contextual Info: Preliminary GS8161ExxB T/D -xxxV 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation

GS8161E18BT-150V

Abstract: GS8161E18BT-200V GS8161E18BT-250V QC2004
Contextual Info: Preliminary GS8161ExxB T/D -xxxV 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation

Contextual Info: Preliminary GS8161E18/36T-250/225/200/166/150/133 1M x 18, 512K x 36 16Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect DCD operation • IEEE 1149.1 JTAG-compatible Boundary Scan

Contextual Info: GS8161ExxB T/D -xxxV 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 250 MHz–150 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline

GS8161E18

Abstract: GS8161E18T-250 GS8161E36 A13478
Contextual Info: Preliminary GS8161E18/36T-250/225/200/166/150/133 1M x 18, 512K x 36 18Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect DCD operation • IEEE 1149.1 JTAG-compatible Boundary Scan

Contextual Info: GS8161ExxD GT/D -xxxV 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 333 MHz–150 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation

K7A803609B-PC25

Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
Contextual Info: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15

IS61LF51232-8

Abstract: IS61LV25616AL-8TL IS61LF51232 IS61LV5128L-10T GS71116AU-10E 167ML IS61NLP25636A-200TQL IS61QDB22M36 IS61LPS51236-150B IS61LV5128L-12T
Contextual Info: ISSI * - Tie down extra four I/Os with resistor + - Tie down extra two I/Os with resistor # - Connect pin 14 FT pin to Vss IS61DDB22M36-167M3 IS61DDB22M36-167M3L IS61DDB22M36-167ML IS61DDB22M36-200M IS61DDB22M36-200M3 IS61DDB22M36-200M3L IS61DDB22M36-200ML

Contextual Info: Preliminary GS8161E18/36T-225/200/180/166/150/133 1M x 18, 512K x 36 16Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect DCD operation • IEEE 1149.1 JTAG-compatible Boundary Scan

GS8161E18BT-150V

Abstract: GS8161E18BT-200V GS8161E18BT-250V
Contextual Info: Preliminary GS8161ExxB T/D -xxxV 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation

GS8161E18D-133

Abstract: GS8161E18D-150 GS8161E18D-166 GS8161E18D-200 GS8161E18D-225 GS8161E18D-250
Contextual Info: Revision: 9/26/02 GS8161E18/32/36D Supplemental Datasheet Information This supplemental information applies to the GS8161E18/36T datasheet, which you will find attached to this document. This supplement includes a new package offering the 165-bump BGA—Package D , as well as an additional organization (x32, which is only