GS8161E18B Search Results
GS8161E18B Datasheets (9)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| GS8161E18B | GIGA | 18Mb Burst SRAMs | Original | 613.07KB | 35 | ||
| GS8161E18BT | GIGA | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs | Original | 774.37KB | 35 | ||
| GS8161E18BT-150 | GIGA | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs | Original | 774.38KB | 35 | ||
| GS8161E18BT-150V | GIGA | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs | Original | 787.95KB | 35 | ||
| GS8161E18BT-200 | GIGA | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs | Original | 774.38KB | 35 | ||
| GS8161E18BT-200V | GIGA | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs | Original | 787.95KB | 35 | ||
| GS8161E18BT-250 | GIGA | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs | Original | 774.37KB | 35 | ||
| GS8161E18BT-250V | GIGA | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs | Original | 787.95KB | 35 | ||
| GS8161E18BT-V | GIGA | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs | Original | 787.94KB | 35 |
GS8161E18B Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
GS8161E36BGD-250Contextual Info: Preliminary GS8161E18B T/D /GS8161E32B(D)/GS8161E36B(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation |
Original |
gs8161e18b/gs8161e32b/gs8161e36b100-pin+4 | |
GS8161E18B
Abstract: GS8161E18BT-150 GS8161E18BT-200 GS8161E18BT-250 GS8161E36B QC2004
|
Original |
gs8161e18b/gs8161e32b/gs8161e36b100-pin+7 | |
|
Contextual Info: GS8161E18B T/D /GS8161E32B(D)/GS8161E36B(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 250 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation |
Original |
gs8161e18b/gs8161e32b/gs8161e36b100-pin+1 | |
GS8161E36B
Abstract: GS8161E18B GS8161E18BT-150 GS8161E18BT-200 GS8161E18BT-250
|
Original |
gs8161e18b/gs8161e32b/gs8161e36b100-pin+6 | |
QC2004
Abstract: GS8161E18B GS8161E18BT-150 GS8161E18BT-200 GS8161E18BT-250 GS8161E36B
|
Original |
gs8161e18b/gs8161e32b/gs8161e36b100-pin+7 | |
|
Contextual Info: GS8161E18B T/D /GS8161E32B(D)/GS8161E36B(T/D) 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation • IEEE 1149.1 JTAG-compatible Boundary Scan • 2.5 V or 3.3 V +10%/–10% core power supply |
Original |
gs8161e18b/gs8161e32b/gs8161e36b100-lead+1 | |
GS8161E18B
Abstract: GS8161E18BT-150 GS8161E18BT-200 GS8161E18BT-250 GS8161E36B
|
Original |
gs8161e18b/gs8161e32b/gs8161e36b100-pin+6 | |
|
Contextual Info: Preliminary GS8161ExxB T/D -xxxV 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation |
Original |
gs8161exxb100-pin165-bump100-lead+1 | |
GS8161E18BT-150V
Abstract: GS8161E18BT-200V GS8161E18BT-250V QC2004
|
Original |
gs8161exxb100-pin165-bump100-lead+6 | |
|
Contextual Info: GS8161ExxB T/D -xxxV 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 250 MHz–150 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline |
Original |
gs8161exxb100-pin165-bump8161exx-xxxv | |
K7A803609B-PC25
Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
|
Original |
k6r1016v1c-fc10k6r1016v1c-fc12k6r1016v1c-fc15k6r1016v1c-fc20+16 | |
IS61LF51232-8
Abstract: IS61LV25616AL-8TL IS61LF51232 IS61LV5128L-10T GS71116AU-10E 167ML IS61NLP25636A-200TQL IS61QDB22M36 IS61LPS51236-150B IS61LV5128L-12T
|
Original |
is61ddb22m36-167m3is61ddb22m36-167m3lis61ddb22m36-167mlis61ddb22m36-200m+16 | |
GS8161E18BT-150V
Abstract: GS8161E18BT-200V GS8161E18BT-250V
|
Original |
gs8161exxb100-pin165-bump100-lead+4 | |
|
Contextual Info: GS8161ExxB T/D -xxxV 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation • IEEE 1149.1 JTAG-compatible Boundary Scan • 1.8 V or 2.5 V core power supply |
Original |
gs8161exxb100-lead8161exx-xxxv | |
|
|
|||
GS816036BGT-200
Abstract: GS880E18BGT-150 AS7C3256-12JC AS7C33128PFS32A-166TQC AS7C331MPFS18A-166TQCN AS7C33512PFD36A AS7C34098A-10TC GS8160E36BT-150 GS832136GE-166 GS840Z36AT-100
|
Original |
as7c251mft32a-85tqcnas7c251mft36a-65bcas7c251mft36a-65bcnas7c251mft36a-65tqc+16 | |
GS8161E18BT-150V
Abstract: GS8161E18BT-200V GS8161E18BT-250V
|
Original |
gs8161exxb100-pin165-bump100-lead+4 | |
GS8673EQ
Abstract: SIGMA SigmaQuad-IIIe GS8673ED36 5502M GS8322Z36 GS816032 GS8171DW GS8673ET36 GS8673ED18
|
Original |
gs8673ed37ayy-gs8673ed19ayy-gs8673eq37ayy-gs8673eq19ayy-+10 | |
GS8640Z36
Abstract: GS840Z18A GS816032 GS8342T36 GS8662Q18
|
Original |
144mbgs81302d37yy-gs81302d19yy-gs81302d36yy-+8 | |