GRM55DR61H106KA88B 10 UF Search Results

ATC100A101JT150XT

Abstract: atc100a100jt150xt ATC100A101 A114 A115 AN1955 C101 JESD22 MRFG35020A MRFG35020AR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35020A Rev. 0, 1/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35020AR1 Designed for WiMAX and WLL base station applications that have a 200 MHz BW requirement in the 2300- 3800 MHz frequency range. Suitable for TDMA and

NIPPON CAPACITORS

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P24190H Rev. 0, 12/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed primarily for large - signal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications.

AN1955

Abstract: GRM55DR61H106KA88B kemet c chip data sheet Resistor mttf 465B A114 A115 JESD22 MRF6S24140H MRF6S24140HR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S24140H Rev. 2, 2/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S24140HR3 MRF6S24140HSR3 Designed primarily for large - signal output applications at 2450 MHz.

465B

Abstract: A114 A115 AN1955 JESD22 MRF6S24140H MRF6S24140HR3 MRF6S24140HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S24140H Rev. 1, 4/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S24140HR3 MRF6S24140HSR3 Designed primarily for large - signal output applications at 2450 MHz.

GRM55DR61H106KA88B

Abstract: C1825C103J1RAC NIPPON CAPACITORS 2508051107Y0 A114 A115 AN1955 C101 JESD22 MRF6P24190HR6
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P24190H Rev. 1, 3/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed primarily for large - signal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications.

465B

Abstract: A114 A115 AN1955 JESD22 MRF6S24140H MRF6S24140HR3 MRF6S24140HSR3 GRM55DR61H106KA88B C1825C103J1RAC
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S24140H Rev. 0, 3/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S24140HR3 MRF6S24140HSR3 Designed primarily for large - signal output applications at 2450 MHz. Device

2508051107Y0

Abstract: NIPPON CAPACITORS AN1955 GRM55DR61H106KA88B NACZF331M63V MRF6P24190HR6 A114 A115 C101 JESD22
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P24190H Rev. 3, 2/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed primarily for large - signal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications.

Contextual Info: Freescale Semiconductor Technical Data Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35020AR1 LIFETIME BUY Designed for WiMAX and WLL base station applications that have a 200 MHz BW requirement in the 2300-3800 MHz frequency range. Suitable for TDMA and

GRM55DR61H106KA88B

Abstract: AN1955 P channel irl MRFG35020A A114 A115 C101 JESD22 MRFG35020AR1 ATC100A101JT150XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35020A Rev. 1, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35020AR1 Designed for WiMAX and WLL base station applications that have a 200 MHz BW requirement in the 2300- 3800 MHz frequency range. Suitable for TDMA and

2508051107Y0

Abstract: NIPPON CAPACITORS T491D226K025AT A114 A115 AN1955 C101 JESD22 MRF6P24190HR6 GRM55DR61H106KA88B
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P24190H Rev. 2, 4/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed primarily for large - signal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications.

GRM55DR61H106KA88B

Abstract: AN1955 MRF6S24140H MRF6S24140HR3 MRF6S24140HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S24140H Rev. 3, 3/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S24140HR3 MRF6S24140HSR3 Designed primarily for large- signal output applications at 2450 MHz.

k 2645 MOSFET

Abstract: K 2645 transistor NIPPON CAPACITORS mosfet j142 100B3R3CP500X A114 A115 AN1955 C101 JESD22
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P27160H Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.

Chemi-Con DATE CODES

Abstract: transistor c 5287 MRF5S9150HS T491C105K0 ATC100B220JT500XT NIPPON CAPACITORS AN1955 ATC100B470JT500XT GX-0300-55-22 JESD22-A114
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S9150H-1 Rev. 2, 12/2009 RF Power Field Effect Transistor MRF5S9150HR3 Designed for N-CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications.

A114

Abstract: A115 C101 JESD22 MD7P19130H MD7P19130HR3 MD7P19130HSR3 capacitor mttf
Contextual Info: Freescale Semiconductor Technical Data Document Number: MD7P19130H Rev. 0, 5/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be

A114

Abstract: A115 C101 JESD22 MD7P19130H MD7P19130HR3 MD7P19130HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MD7P19130H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be

NIPPON CAPACITORS

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.

capacitor mttf

Abstract: T491C105K0 AN1955 MD7P19130H MD7P19130HR3 MD7P19130HSR3 GRM55DR61H106KA88B
Contextual Info: Freescale Semiconductor Technical Data Document Number: MD7P19130H Rev. 2, 8/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be

NIPPON CAPACITORS

Abstract: A114 A115 AN1955 ATC100B470JT500XT C101 JESD22 MRF5S9150HSR3 d 5287 transistor Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S9150H - 2 Rev. 3, 3/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9150HSR3 Designed for N - CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications.

6 017 03 61

Abstract: A113 MRFG35010ANT1 MRFG35010NT1 Z16C20
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 7, 1/2008 MRFG35010NT1 replaced by MRFG35010ANT1. MRFG35010NT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 9 W, 12 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,

ATC100A101

Abstract: murata gaas field effect transistor atc100a ATC100A1 N 341 AB A113 A114 A115 AN1955 C101
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35002N6A Rev. 1, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB

atc 17-33

Abstract: MRFG35010ANT1 5V piezo 9mm X 12mm IRL 724 N A113 A114 A115 AN1955 C101 JESD22
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 1, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB

2312 footprint dimension

Abstract: A113 AN1955 MRFG35002N6T1 GT1040
Contextual Info: Document Number: MRFG35002N6 Rev. 1, 5/2006 Freescale Semiconductor Technical Data Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB

A114

Abstract: A115 AN1955 C101 JESD22 MRF6S23100H MRF6S23100HR3 MRF6S23100HSR3 456 mhz Nippon capacitors
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S23100H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S23100HR3 MRF6S23100HSR3 Designed for CDMA base station applications with frequencies from 2300 to

NIPPON CAPACITORS

Abstract: 2 w rf 150-200 mhz 2508051107Y0 MRF6P23190HR6 A114 A115 AN1955 C101 JESD22 j3001
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 3, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.