NACZF331M63V Search Results

NACZF101M63V12.5X17TR13T2F

Abstract: NACZF221M100V18X17TR13T2F naczf221m50v12.5x17tr13t2f NACZF682M10V18X22
Contextual Info: Surface Mount Aluminum Electrolytic Capacitors NACZF Series FEATURES RoHS • CYLINDRICAL LEADLESS TYPE FOR SURFACE MOUNTING Compliant includes all homogeneous materials • HIGH CAPACITANCE VALUES UP TO 6800µF • LOW IMPEDANCE/HIGH RIPPLE CURRENT AT 100KHz

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 3, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.

Contextual Info: Surface Mount Aluminum Electrolytic Capacitors NACZF Series FEATURES RoHS • CYLINDRICAL LEADLESS TYPE FOR SURFACE MOUNTING Compliant includes all homogeneous materials • HIGH CAPACITANCE VALUES UP TO 6800 F • LOW IMPEDANCE/HIGH RIPPLE CURRENT AT 100KHz

nippon capacitors

Abstract: MRF6S23140H j727
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S23140HR3 MRF6S23140HSR3 Designed for CDMA base station applications with frequencies from 2300 to

2508051107Y0

Abstract: NIPPON CAPACITORS T491D226K025AT A114 A115 AN1955 C101 JESD22 MRF6P24190HR6 GRM55DR61H106KA88B
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P24190H Rev. 2, 4/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed primarily for large - signal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications.

NACZF471M63V18X22TR13

Contextual Info: Surface Mount Aluminum Electrolytic Capacitors NACZF Series FEATURES RoHS • CYLINDRICAL LEADLESS TYPE FOR SURFACE MOUNTING Compliant includes all homogeneous materials • HIGH CAPACITANCE VALUES UP TO 6800 F • LOW IMPEDANCE/HIGH RIPPLE CURRENT AT 100KHz

GRM55DR61H106KA88B

Abstract: 2508051107Y0 NIPPON CAPACITORS A114 A115 AN1955 C101 JESD22 MRF6P23190HR6 J3001
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 2, 3/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.

J673

Abstract: J701 nippon capacitors 465B A114 A115 C101 JESD22 MRF6S23140HR3 MRF6S23140HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S23140HR3 MRF6S23140HSR3 Designed for CDMA base station applications with frequencies from 2300 to

NIPPON CAPACITORS

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 0, 10/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for 802.16 WiBro and dual mode applications with frequencies from 2300 to 2400 MHz. Suitable for Class AB feedforward and predistortion

nippon capacitors

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev. 0, 1/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S23140HR3 MRF6S23140HSR3 Designed for 802.16 WiBro and dual mode applications with frequencies

capacitor 1825

Abstract: Nippon capacitors
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for N- CDMA base station applications with frequencies from 2600

Contextual Info: Surface Mount Aluminum Electrolytic Capacitors NACZF Series FEATURES RoHS • CYLINDRICAL LEADLESS TYPE FOR SURFACE MOUNTING Compliant includes all homogeneous materials • HIGH CAPACITANCE VALUES UP TO 6800 F • LOW IMPEDANCE/HIGH RIPPLE CURRENT AT 100KHz

Contextual Info: Surface Mount Aluminum Electrolytic Capacitors NACZF Series FEATURES RoHS • CYLINDRICAL LEADLESS TYPE FOR SURFACE MOUNTING Compliant includes all homogeneous materials • HIGH CAPACITANCE VALUES UP TO 6800 F • LOW IMPEDANCE/HIGH RIPPLE CURRENT AT 100KHz

k 2645 MOSFET

Abstract: K 2645 transistor NIPPON CAPACITORS transistor d 2645 z33 vishay A114 A115 AN1955 C101 JESD22
Contextual Info: Freescale Semiconductor Technical Data MRF6P27160H Rev. 0, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for N - CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

Contextual Info: Surface Mount Aluminum Electrolytic Capacitors NACZF Series FEATURES RoHS • CYLINDRICAL LEADLESS TYPE FOR SURFACE MOUNTING Compliant includes all homogeneous materials • HIGH CAPACITANCE VALUES UP TO 6800 F • LOW IMPEDANCE/HIGH RIPPLE CURRENT AT 100KHz

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P24190H Rev. 3, 2/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed primarily for large - signal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications.

5x17

Abstract: 17WT TS-16949
Contextual Info: Surface Mount Aluminum Electrolytic Capacitors NACZF Series FEATURES RoHS • CYLINDRICAL LEADLESS TYPE FOR SURFACE MOUNTING Compliant includes all homogeneous materials • HIGH CAPACITANCE VALUES UP TO 6800 F • LOW IMPEDANCE/HIGH RIPPLE CURRENT AT 100KHz

K 2645 schematic circuit

Abstract: DBD16 2508051107Y0 A114 A115 AN1955 C101 JESD22 MRF6S27085H MRF6S27085HR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for CDMA base station applications with frequencies from 2600 to

Contextual Info: Surface Mount Aluminum Electrolytic Capacitors NACZF Series FEATURES RoHS • CYLINDRICAL LEADLESS TYPE FOR SURFACE MOUNTING Compliant includes all homogeneous materials • HIGH CAPACITANCE VALUES UP TO 6800 F • LOW IMPEDANCE/HIGH RIPPLE CURRENT AT 100KHz

A114

Abstract: A115 AN1955 C101 JESD22 MRF6S23100H MRF6S23100HR3 MRF6S23100HSR3 456 mhz Nippon capacitors
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S23100H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S23100HR3 MRF6S23100HSR3 Designed for CDMA base station applications with frequencies from 2300 to

2508051107Y0

Abstract: NIPPON CAPACITORS AN1955 GRM55DR61H106KA88B NACZF331M63V MRF6P24190HR6 A114 A115 C101 JESD22
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P24190H Rev. 3, 2/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed primarily for large - signal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications.

NIPPON CAPACITORS

Abstract: 2 w rf 150-200 mhz 2508051107Y0 MRF6P23190HR6 A114 A115 AN1955 C101 JESD22 j3001
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 3, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.

A114

Abstract: A115 AN1955 JESD22 MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 Nippon capacitors
Contextual Info: Freescale Semiconductor Technical Data MRF6S27085H Rev. 0, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for N- CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

Z25 transistor

Abstract: Z27 transistor
Contextual Info: Document Number: MHT1001H Rev. 0, 5/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MHT1001HR5 RF power transistor suitable for industrial heating applications operating at 2450 MHz. Device is capable of both CW and pulse operation.