T491C105K0 Search Results

Contextual Info: KEMET Part Number: T491C105K050AH7280 Capacitor, tantalum, 1 uF, 6032, +/-10% Tol, 50V@85C General Information Manufacturer: KEMET Electrical Specifications Capacitance: 1 uF Voltage DC @ 85C: 50V Voltage DC @ 105C: 41.5V Voltage DC @ 125C: 33V Tolerance:

Contextual Info: B45196E7105K309 aka T491C105K050ZT Capacitor, tantalum, 1 uF, 6032, +/-10% Tol, 50V@85C TantChipMolded2Mil Cathode End View Side View B + H X T S W E A S Anode End View F L K G Bottom View B + P Cutout R Cutout at KEMET’s option either end ; see note about P and R dimensions and cutout.

Contextual Info: T491C105K050ZT aka B45196E7105K309 Capacitor, tantalum, 1 uF, 6032, +/-10% Tol, 50V@85C + Bottom View Top View Pola rity F Ind ic a tor Kem et m a y c onstruc t a term ina l slot on the p ositive sid e a t Kem ets Op tion L H K W End View Dimensions mm S

T491C105K0

Contextual Info: KEMET Part Number: T491C105K050ATAUTO Capacitor, tantalum, 1 uF, 6032, +/-10% Tol, 50V@85C General Information Manufacturer: KEMET Electrical Specifications Capacitance: 1 uF Voltage DC @ 85C: 50V Voltage DC @ 105C: 41.5V Voltage DC @ 125C: 33V Tolerance:

Contextual Info: KEMET Part Number: T491C105K050ATAUTO Capacitor, tantalum, 1 uF, 6032, +/-10% Tol, 50V@85C General Information Manufacturer: KEMET Electrical Specifications Capacitance: 1 uF Voltage DC @ 85C: 50V Voltage DC @ 105C: 41.5V Voltage DC @ 125C: 33V Tolerance:

Contextual Info: B45196E7105K306 aka T491C105K050ZT7280 Capacitor, tantalum, 1 uF, 6032, +/-10% Tol, 50V@85C TantChipMolded2Mil Cathode End View Side View B + H X T S W E A S Anode End View F L K G Bottom View B + P Cutout R Cutout at KEMET’s option either end ; see note about P and R dimensions and cutout.

GR331

Abstract: en220 arcotronics mkp 1.44 b3202 y2 panasonic GC 5.5v 1.0f EPOC E68 X2 CAP 220nF ±20 275V murata ARCOTRONICS MKP 1.44 7.5 arcotronics mkp 1.44 ac capacitors mkp21
Contextual Info: An invaluable resource for buyers and engineers This particular book presents Anglia’s primary capacitor product lines sourced from eleven key suppliers. Compiled in a convenient format to assist both buyers and engineers, it provides all the essential data and part numbers to aid the

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P9220H Rev. 0, 10/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of

tantulum capacitor

Abstract: 8VSB NIPPON CAPACITORS datasheet dvbt transmitter dvbt transmitter ECE capacitor rf push pull mosfet power amplifier A114 Nippon chemi AN1955
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P3300H Rev. 0, 9/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P3300HR3 MRF6P3300HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance

3528

Abstract: T495X476K020AS Tantalum Capacitor kemet 10 uF T495X475K050AS T495X337K006AS kemet Tantalum T491A475K006AS T495X107K016AS T491D107K006AS T491B106K020AS
Contextual Info: Go ahead, it’s your move . . . . Design a KEMET Tantalum Chip into your future KEMET is offering five Tantalum Chip Engineering Kits to meet your diverse design needs for the future. KEMET’s line of Engineering Kits for Tantalum Chips will include a T495 Low ESR Kit, an Extended Range T491 Kit, a Standard T491

Contextual Info: Freescale Semiconductor Technical Data Document Number: MD7P19130H Rev. 2, 8/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P21190HR6 Rev. 5,12/2010 LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6P21190HR6 LIFETIME BUY Designed for W-CDMA base station applications with frequencies from 2110

MRF6S19120H

Contextual Info: Freescale Semiconductor Technical Data MRF6S19120H Rev. 0, 2/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

Contextual Info: MRF6S19100H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19100HR3 MRF6S19100HSR3 Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6S9160H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21110H Rev. 1, 7/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S21110HR3 MRF7S21110HSR3 Designed for CDMA base station applications with frequencies from 2110 to

T491C105K0

Contextual Info: Document Number: MRF6P21190HR6 Rev. 5,12/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6P21190HR6 LIFETIME BUY Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

3528

Abstract: LED+white+SMD+3528
Contextual Info: Type T491 Solid Tantalum Chip Capacitors Solid Tantalum Chip Capacitors for Surface Mount Applications ♦ ♦ ♦ ♦ E Low DF and DC Leakage Temperature Stable 260 ºC for 10 Seconds Soldering Meets IECQ Standard QC300801/US0001 Meets EIA Standard 535BAAC

FERRITE BEAD 1000 OHM 0805

Abstract: MW6S010NR1 A113 A114 A115 AN1955 C101 JESD22 MW6S010GNR1 CRCW12061001F100
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 3, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier

EEEFK1H101P

Abstract: A114 A115 AN1955 C101 JESD22 MRF6P18190HR6
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P18190H Rev. 2, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W - CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

Nippon capacitors

Abstract: MRF6S19120H
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19120H Rev. 2, 12/2008 RF Power Field Effect Transistors MRF6S19120HR3 MRF6S19120HSR3 Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

mcr63

Abstract: T491C105K050AT A114 A115 AN1955 C101 JESD22 MRF7S21110HR3 MRF7S21110HSR3 mcr63v477m
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21110H Rev. 0, 9/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S21110HR3 MRF7S21110HSR3 Designed for CDMA base station applications with frequencies from 2110 to

KME63VB471M12x25LL

Abstract: transistors 5287 A114 A115 AN1955 C101 JESD22 MRF5S9150HR3 MRF5S9150HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S9150H Rev. 1, 5/2006 RF Power Field Effect Transistors MRF5S9150HR3 MRF5S9150HSR3 Designed for N - CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications.

A114

Abstract: AN1955 JESD22 MRF6S9160H MRF6S9160HR3 MRF6S9160HSR3 atc100b220j
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9160H Rev. 2, 8/2008 MRF6S9160HR3/HSR3 replaced by MRFE6S9160HR3/HSR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors ARCHIVE INFORMATION Designed for N - CDMA, GSM and GSM EDGE base station applications