GP80 Search Results

Contextual Info: Data Sheet `Type Model No.: GP80AAAHC : Rechargeable Nickel Metal Hydride Cylindrical Cell Φ = 10.5 mm H = 44.5 mm Fast Charge charge control required Voltage (V) 1.6 Nominal Dimension (with Sleeve) : Applications : Recommended discharge current 80 to 2400 mA

GP80BVH

Abstract: GP80B
Contextual Info: Data Sheet Model No.: GP80BVH Type : Rechargeable Nickel Metal Hydride Button Cell Nominal Dimension : Applications Charge Characteristics Voltage V 1.6 Φ = 15.5mm H = 6.0mm : Recommended discharge current 0.8 to 40mA 1.4 Nominal Voltage : 1.2V Capacity

GP800

Abstract: AN4508 AN4502 AN4503 AN4505 GP800DCS18 DS5221-4 dc chopper circuit application
Contextual Info: GP800DCS18 GP800DCS18 Chopper Switch IGBT Module Replaces November 2000 version, DS5221-4.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate With Al2O3 Substrate ■ Low Inductance Internal Construction ■ Full 1800V Rating ■ 800A Per Module

GP801DCM18

Abstract: AN4502 AN4503 AN4505 AN4506
Contextual Info: GP801DCM18 GP801DCM18 Hi-Reliability Chopper Switch Low VCE SAT IGBT Module DS5365-3.0 January 2001 FEATURES • Low VCE(SAT) ■ 800A Per Module ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS

AN4502

Abstract: AN4503 AN4505 AN4506 GP800DCM18
Contextual Info: GP800DCM18 GP800DCM18 Hi-Reliability Chopper Switch IGBT Module DS5363-3.0 January 2001 FEATURES • High Thermal Cycling Capability ■ 800A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES typ VCE(sat)

gp80

Abstract: GP80-10 GP80-005 GP80-01 GP80-02 GP80-04 GP80-06 GP80-08
Contextual Info: GP80-005 THRU GP80-10 FRONTIER ELECTRONICS CO., LTD. 8A GENERAL PURPOSE PLASTIC RECTIFIER FEATURES ! HIGH CURRENT LEAD MOUNTED ! DIFFUSED JUNCTION ! HIGH SURGE CAPABILITY ! LOW FORWARD VOLTAGE DROP ! COMPLETELY INSULATED CASE ! UNIFORM MOLDED BODY ! THE PLASTIC MATERIAL CARRIES U/L RECOGNITION 94V-0

DS493

Abstract: DS4933
Contextual Info: M ITEL S E M IC O N D U C T O R GP800DHB18S Powerline N-Channel IGBT Module Advance Inform ation DS4933 - 2.8 February 1999 Supesedes August 1998, version DS4933-2.0 T he G P 800D H B 18S is a dual sw itch 1800V, robust n c h a n n e l e n h a n c e m e n t m o d e in s u la te d g a te b ip o la r

AN4502

Abstract: DS5358-2 AN4503 AN4505 AN4506 GP800NSS33 an5167 440nF DS-5358
Contextual Info: GP800NSS33 GP800NSS33 Single Switch IGBT Module Preliminary Information Replaces February 2000 version, DS5358-2.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate with AL2O3 Substrate ■ Low Inductance Internal Construction DS5358-2.1 March 2001

PLESSEY CLA

Contextual Info: GEC PLESSEY S i S E M I C O N D U C T O R S DS4338-4.2 GP800DHB12S POWERLINE N-CHANNELIGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V ^CES 2.8V 800A l«COMT 1600A ^C PK) 190ns tr 840ns • High Power Switching. ■ Motor Control. ■ UPS. ■ AC And DC Servo Drive Amplifiers.

AN4505

Abstract: GP800DDM18 AN4502 AN4503 12V DC sine wave inverters circuit diagram
Contextual Info: GP800DDM18 GP800DDM18 Hi-Reliability Dual Switch IGBT Module Advance Information Replaces October 2000 version, DS5364-2.0 FEATURES • High Thermal Cycling Capability ■ 800A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates

AN4502

Abstract: AN4503 AN4505 GP800FSS18
Contextual Info: GP800FSS18 GP800FSS18 Singles Switch IGBT Module Replaces January 2000 version, DS5261-2.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate With Al2O3 Substrate ■ Low Inductance Internal Construction ■ Full 1800V Rating ■ 800A Per Module

DS5402-1

Abstract: AN4502 AN4503 AN4505 AN4506 GP800FSM18
Contextual Info: GP800FSM18 GP800FSM18 Hi-Reliability Single Switch IGBT Module DS5402-1.1 January 2001 FEATURES • High Thermal Cycling Capability ■ 800A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES typ VCE(sat)

DS5401-1

Abstract: basic single phase ac motor reverse forward AN4502 AN4503 AN4505 AN4506 GP801FSM18 DS5401
Contextual Info: GP801FSM18 GP801FSM18 Hi-Reliability Single Switch Low VCE SAT IGBT Module DS5401-1.1 January 2001 FEATURES • Low VCE(SAT) ■ 800A Per Switch ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS

AN4502

Abstract: AN4503 AN4505 AN4506 GP800DDM12 dynex igbt 1200v
Contextual Info: GP800DDM12 GP800DDM12 Hi-Reliability Dual Switch IGBT Module Advance Information Replaces May 2000 version, DS5291-1.3 FEATURES • High Thermal Cycling Capability ■ 800A Per Switch ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates

AN450

Abstract: AN4502 AN4503 AN4505 GP800FSS12
Contextual Info: GP800FSS12 GP800FSS12 Powerline N-Channel Single Switch IGBT Module Preliminary Information Replaces October 1999 version, DS5239-2.0 DS5239-3.0 January 2000 The GP800FSS12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar

GP80AAAHC

Contextual Info: Data Sheet `Type Model No.: GP80AAAHC Fast Charge charge control required : Rechargeable Nickel Metal Hydride Cylindrical Cell Voltage (V) 1.6 Φ = 10.5 mm H = 44.5 mm Nominal Dimension (with Sleeve) : Applications : Recommended discharge current 80 to 2400mA

ge traction motor

Abstract: DS493
Contextual Info: @M ITEL GP800DHB12T Powerline N-Channel IGBT Module SEMICONDUCTOR A dvance Inform ation Supesedes August 1998, version DS4931-2.0 DS4931-3.5 February 1999 The GP800DHB12T is a dual switch 1200V, robust n channel enhan cem e nt m ode Insulated gate bipolar

dc servo motor control

Abstract: DS4338
Contextual Info: GP800DHB12S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Advance Inform ation Supersedes July 1996 version, DS4338 - 4.2 DS4338 - 4.3 March 1998 TYPICAL KEY PARAMETERS 1200V 'c E sa„ 2.8V 'c c o n t 800A 'c ,P K , 1600A tr 190ns t. 840ns APPLICATIONS

GP801DDS18

Abstract: AN4502 AN4503 AN4505 DS235-3
Contextual Info: GP801DDS18 GP801DDS18 Dual Switch Low VCE SAT IGBT Module Replaces January 2000 version, DS235-3.0 FEATURES • Low VCE(SAT) ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 800A Per Arm APPLICATIONS

723 ic internal diagram

Abstract: AN4502 AN4503 AN4505 GP800DDS18
Contextual Info: GP800DDS18 GP800DDS18 Dual Switch IGBT Module Replaces October 2000 version, DS5165-4.2 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate With Al2O3 Substrate ■ Low Inductance Internal Construction ■ Full 1800V Rating ■ 800A Per Arm

AN4502

Abstract: AN4503 AN4505 GP800DDS12 basic single phase ac motor reverse forward circuit diagram
Contextual Info: GP800DDS12 GP800DDS12 Powerline N-Channel Dual Switch IGBT Module Replaces October 1999 version, DS5172-3.0 DS5172-4.0 January 2000 The GP800DDS12 is a dual switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the

DS51721

Abstract: bipolar transistor td tr ts tf
Contextual Info: GP800DDS12-ABC GP800DDS12-ABC Powerline N-Channel IGBT Module DS5172-1.2 May 1999 The GP800DDS12-ABC is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the module is suitable for a variety of high voltage

bipolar transistor td tr ts tf

Contextual Info: GP800DDS18-AAB GP800DDS18-AAB Powerline N-Channel IGBT Module Advance Information DS5165-1.0 May 1999 The GP800DDS18-AAB is a dual switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the

80AAKC

Abstract: GP80AAKC
Contextual Info: Data Sheet Model No.: GP80AAKC Type : Rechargeable Nickel Cadmium Cylindrical Cell Fast Charge Charge control required Voltage (V) 1.7 Nominal Dimension (with Sleeve) : Φ =14.5mm H =50.5mm 1.6 Applications : Recommended discharge current 40 to 2400mA 1.4