GP800
Abstract: AN4508 AN4502 AN4503 AN4505 GP800DCS18 DS5221-4 dc chopper circuit application
Contextual Info: GP800DCS18 GP800DCS18 Chopper Switch IGBT Module Replaces November 2000 version, DS5221-4.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate With Al2O3 Substrate ■ Low Inductance Internal Construction ■ Full 1800V Rating ■ 800A Per Module
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GP801DCM18
Abstract: AN4502 AN4503 AN4505 AN4506
Contextual Info: GP801DCM18 GP801DCM18 Hi-Reliability Chopper Switch Low VCE SAT IGBT Module DS5365-3.0 January 2001 FEATURES • Low VCE(SAT) ■ 800A Per Module ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS
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AN4502
Abstract: AN4503 GP401LSS18 DSA0018823 ups sine wave inverter circuit diagram
Contextual Info: GP401LSS18 GP401LSS18 Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information DS5288-1.3 January 2000 The GP401LSS18 is a single switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the
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AN4502
Abstract: AN4503 AN4505 GP2401ESM18 3,3 kw high frequency transistor module
Contextual Info: GP2401ESM18 GP2401ESM18 Hi-Reliability Single Switch Low VCE SAT IGBT Module Replaces February 2000 version, DS5345-1.0 FEATURES • Low VCE(SAT) ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5345-2.4 January 2001
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gp2401esm18ds5345-1ds5345-2an4502+3an4503an45053,3 kw high frequency transistor module
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AN4502
Abstract: AN4503 AN4505 AN4506 GP800DCM18
Contextual Info: GP800DCM18 GP800DCM18 Hi-Reliability Chopper Switch IGBT Module DS5363-3.0 January 2001 FEATURES • High Thermal Cycling Capability ■ 800A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES typ VCE(sat)
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AN4502
Abstract: AN4503 GP200MKS12 GP200MLS12 IGBT 200A 1200V application induction heating DIODE 10V 10mA AN5190
Contextual Info: GP200MLK12 GP200MKS12 IGBT Chopper Module Preliminary Information DS5448-1.2 April 2001 FEATURES • Internally Configured With Upper Arm Controlled ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction KEY PARAMETERS
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gp200mlk12gp200mks12ds5448-1an4502+5an4503gp200mls12igbt 200a 1200v application induction heatingdiode 10v 10maan5190
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AN4502
Abstract: AN4503 AN4505 AN4506 GP2400ESM18
Contextual Info: GP2400ESM18 GP2400ESM18 Hi-Reliability Single Switch IGBT Module DS5406-1.1 January 2001 FEATURES • High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates ■ 2400A Per Module KEY PARAMETERS VCES typ VCE(sat)
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AN4502
Abstract: DS5358-2 AN4503 AN4505 AN4506 GP800NSS33 an5167 440nF DS-5358
Contextual Info: GP800NSS33 GP800NSS33 Single Switch IGBT Module Preliminary Information Replaces February 2000 version, DS5358-2.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate with AL2O3 Substrate ■ Low Inductance Internal Construction DS5358-2.1 March 2001
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723 ic internal diagram
Abstract: GP1201FSS18 AN4502 AN4503 AN4505 AN4506
Contextual Info: GP1201FSS18 GP1201FSS18 Single Switch Low VCE SAT IGBT Module DS5411-1.1 January 2001 FEATURES • Low VCE(SAT) ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 1200A Per Module KEY PARAMETERS VCES (typ)
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K1p TRANSISTOR
Abstract: AN4502 AN4503 AN4505 GP1600FSM18
Contextual Info: GP1600FSM18 GP1600FSM18 Hi-Reliability Single Switch IGBT Module Replaces May 2000 version, DS5361-1.1 FEATURES • High Thermal Cycling Capability ■ 1600A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5361-2.3 January 2001
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AN4502
Abstract: AN4503 AN4505 AN4506 GP400DDS18
Contextual Info: GP400DDS18 GP400DDS18 Dual Switch IGBT Module Preliminary Information DS5359-2.0 January 2001 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction KEY PARAMETERS VCES typ VCE(sat) (max) IC (max) IC(PK)
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AN4505
Abstract: GP800DDM18 AN4502 AN4503 12V DC sine wave inverters circuit diagram
Contextual Info: GP800DDM18 GP800DDM18 Hi-Reliability Dual Switch IGBT Module Advance Information Replaces October 2000 version, DS5364-2.0 FEATURES • High Thermal Cycling Capability ■ 800A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates
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AN4502
Abstract: AN4503 AN4505 GP800FSS18
Contextual Info: GP800FSS18 GP800FSS18 Singles Switch IGBT Module Replaces January 2000 version, DS5261-2.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate With Al2O3 Substrate ■ Low Inductance Internal Construction ■ Full 1800V Rating ■ 800A Per Module
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DS5402-1
Abstract: AN4502 AN4503 AN4505 AN4506 GP800FSM18
Contextual Info: GP800FSM18 GP800FSM18 Hi-Reliability Single Switch IGBT Module DS5402-1.1 January 2001 FEATURES • High Thermal Cycling Capability ■ 800A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES typ VCE(sat)
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AN5190
Abstract: AN4502 GP200MHB12S GP200MHS12 AN4503 AN4508
Contextual Info: GP200MHS12 GP200MHS12 Half Bridge IGBT Module Replaces GP200MHB12S January 1999 version, DS4339-5.5 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction DS5296-1.5 November 2000 KEY PARAMETERS VCES typ
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DS5401-1
Abstract: basic single phase ac motor reverse forward AN4502 AN4503 AN4505 AN4506 GP801FSM18 DS5401
Contextual Info: GP801FSM18 GP801FSM18 Hi-Reliability Single Switch Low VCE SAT IGBT Module DS5401-1.1 January 2001 FEATURES • Low VCE(SAT) ■ 800A Per Switch ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS
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AN4502
Abstract: AN4503 GP1200ESM33 DS5308-1
Contextual Info: GP1200ESM33 GP1200ESM33 High Reliability Single Switch IGBT Module Advance Information Replaces July 2000 version, DS5308-1.6 FEATURES • High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5308-2.1 February 2001
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AN4502
Abstract: AN4503 AN4505 AN4506 GP800DDM12 dynex igbt 1200v
Contextual Info: GP800DDM12 GP800DDM12 Hi-Reliability Dual Switch IGBT Module Advance Information Replaces May 2000 version, DS5291-1.3 FEATURES • High Thermal Cycling Capability ■ 800A Per Switch ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates
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AN4502
Abstract: AN4503 AN4505 AN4506 GP201MHS18
Contextual Info: GP201MHS18 GP201MHS18 Low VCE SAT Half Bridge IGBT Module DS5290-2.1 January 2001 FEATURES • Low VCE(SAT) ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 200A Per Arm APPLICATIONS ■ High Reliability Inverters
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AN4502
Abstract: AN4503 AN4505 AN4506 GP2400ESM12 S2400A MAX4800A
Contextual Info: GP2400ESM12 GP2400ESM12 Powerline N-Channel Single Switch IGBT Module Preliminary Information DS5360-1.1 May 2000 The GP2400ESM12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the
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AN4502
Abstract: 723 ic internal diagram AN4503 AN4505 AN4506 GP801DCS18 DS5262
Contextual Info: GP801DCS18 GP801DCS18 Chopper Switch Low VCE SAT IGBT Module DS5235-3.0 January 2001 FEATURES • Low VCE(SAT) ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 800A Per Module KEY PARAMETERS VCES (typ)
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DS5306-2
Abstract: IGBT ac switch circuit AN4502 AN4503 AN4505 AN4506 GP400LSS12 AN5000 principle of rating
Contextual Info: GP400LSS12 GP400LSS12 Single Switch IGBT Module Replaces February 2000 version, DS5306-1.2 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 1200V Rating ■ 400A Per Module DS5306-2.3 November 2000
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AN450
Abstract: AN4502 AN4503 AN4505 GP800FSS12
Contextual Info: GP800FSS12 GP800FSS12 Powerline N-Channel Single Switch IGBT Module Preliminary Information Replaces October 1999 version, DS5239-2.0 DS5239-3.0 January 2000 The GP800FSS12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar
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GP801DDS18
Abstract: AN4502 AN4503 AN4505 DS235-3
Contextual Info: GP801DDS18 GP801DDS18 Dual Switch Low VCE SAT IGBT Module Replaces January 2000 version, DS235-3.0 FEATURES • Low VCE(SAT) ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 800A Per Arm APPLICATIONS
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