GP10A DIODE Search Results

Contextual Info: GP10A thru GP10Y www.vishay.com Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER • Low forward voltage drop

Contextual Info: GP10A thru GP10Y Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop ed* t n e Pat * Glass-plastic encapsulation

DO-204AL

Abstract: GP10A GP10Y J-STD-002 GP10JE
Contextual Info: GP10A thru GP10Y Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier application SUPERECTIFIER structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current

Contextual Info: New Product GP10A thru GP10Y Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current

Contextual Info: New Product GP10A thru GP10Y Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current

gp10m 002

Abstract: gp10 GP10B
Contextual Info: GP10A . GP10M 1.0 Amp. Glass Passivated Junction Rectifier Current 1.0 A at 55º C Voltage 50V to 1000 V DO-204AL DO-41 R FEATURES • Glass passivated chip junction • Hyperectifier structure for high reliability • Cavity-free glass-passivated junction

Contextual Info: GP10A thru GP10Y www.vishay.com Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier application SUPERECTIFIER structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current

Contextual Info: GP10A thru GP10Y Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier application SUPERECTIFIER structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current

DO-204AL

Abstract: GP10A GP10Y JESD22-B102 J-STD-002 gp10m 002
Contextual Info: GP10A thru GP10Y Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop ed* t n e Pat * Glass-plastic encapsulation

data sheet GP10A diode

Abstract: DO-204AL GP10A GP10Y JESD22-B102D J-STD-002B GP10J-E3 GP10T
Contextual Info: GP10A thru GP10Y Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for High Reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat * Glass-plastic encapsulation

Contextual Info: GP10A thru GP10Y Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier application structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current • High forward surge capability

GP10Y- E3

Abstract: GP10J-E3/54 DO-204AL GP10A GP10Y JESD22-B102D J-STD-002B gp10w1500v
Contextual Info: GP10A thru GP10Y Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop ed* t n e Pat * Glass-plastic encapsulation

Contextual Info: GP10A . GP10M 1.0 Amp. Glass Passivated Junction Rectifier Current 1.0 A at 55º C Voltage 50V to 1000 V DO-204AL DO-41 R FEATURES • Glass passivated chip junction • Hyperectifier structure for high reliability • Cavity-free glass-passivated junction

Contextual Info: GP10A thru GP10Y Vishay General Semiconductor Glass Passivated Junction Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1600 V IFSM 30 A, 25 A IR 5.0 µA VF 1.1 V, 1.2 V, 1.3 V Tj max. 175 °C d* e t n Pate * Glass-plastic encapsulation

GP10A

Contextual Info: GP10A thru GP10Y Vishay General Semiconductor Glass Passivated Junction Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1600 V IFSM 30 A, 25 A IR 5.0 µA VF 1.1 V, 1.2 V, 1.3 V Tj max. 175 °C d* e t n Pate * Glass-plastic encapsulation

diode BY127 specifications

Abstract: GE diode 1N5061 diode by127 GP 524 DIODE diode cross reference 1N4245 diode 1n5392 GP+524+DIODE BYW27-40Q D0201AD 1N4245
Contextual Info: 6ENL INSTR/ POWER 2SE D • 30=10137 00G3315 1 ■ 7^ W -& Ô STANDARD SILICON RECTIFIERS continued • 1.0 »(A) DO 11 PKG TYPE D041/D015 D015 II I D0204/VP D041 Sr I Il li VRRM (volts) - 50 GP10A BYW27-50 G 1A 1N4001*/ M100A 100 GP10B BYW27-100 G1B 1N4002*/

Contextual Info: GP10x www.vishay.com Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES • Superectifier application SUPERECTIFIER structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current

Contextual Info: GP10x www.vishay.com Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES • Superectifier application SUPERECTIFIER structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current

p30b diode

Abstract: GP30AG GP20AG GP10A diode
Contextual Info: GLASS PASSIVATED AXIAL LEAD SILICON SUPER DIODE PIV Peak inverse V o lta ge typ e M AX AVG R e c tifie d C urre n t H alfW a ve Res. Load 60Hz - Ï - - 10 '"TA VPK A AV ¡MAX FW D Peak| M A X R everse S urge C urre n t C urre n t 1 ' 60H Z «< PIV V o lta g e

6a3 zener

Abstract: DB240B 1N4004 DO-214 w06 sot-23 1N4001 DO-214 1N4004 1N4007 MINIMELF DO214 SRF2020-SRF w06 sot23 1n4007 DO-214 1N5819 SOD-323
Contextual Info: JINAN JINGHENG CO., LTD. MAIN PRODUCT CONTENT 1. SCHOTTKY BARRIER RECTIFIERS Type Number Forward Current Amps Reverse Voltage Range(Volts) Case SR0620-SR06A0 0.6 20-100 DO-41 1N17-1N19 1 20-40 R-1 1N5817-1N5819 1 20-40 DO-41 1S20-1S200 1 20-200 R-1 SR120-SR1200

MDA2501

Abstract: pbl302 g1756 g1756 Diode MDA2502 MDA970A6 MDA3510 MDA2500 MDA3502 Bridge rectifier mda970a1
Contextual Info: DIOTEC ELECTRONICS CORP SflE D • Sfl^lG? ÜDOOlfl^ bTT WÊDIX Appendix IV: Cross Reference Tables <x^o\ _oZ_ SCHOTTKY BARRIER DIODES: INDUSTRY PART NO. 1N5817 1N5818 1N5819 1N5820 1N5821 1N5822 1N5823 1N5824 1N5825 MBR1035 MBR1045 MBR1050 MBR1060 MBR1090

MBR1620CT

Abstract: 1.5Ke240 MBR5020 MBR5045PT BC337 AP6KE15C S9012 s9018 MP106 MB-106
Contextual Info: MCC PART INDEX Diodes PART NUMBER 1.5KE10(C)(A) 1.5KE100(C)(A) 1.5KE11(C)(A) 1.5KE110(C)(A) 1.5KE12(C)(A) 1.5KE120(C)(A) 1.5KE13(C)(A) 1.5KE130(C)(A) 1.5KE15(C)(A) 1.5KE150(C)(A) 1.5KE16(C)(A) 1.5KE160(C)(A) 1.5KE17(C)(A) 1.5KE170(C)(A) 1.5KE18(C)(A) 1.5KE180(C)(A)

EQUIVALENT BYD33D

Abstract: 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent
Contextual Info: DISCRETE SEMICONDUCTORS Cross reference guide Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Cross reference guide “Philips Type” refers to closest Philips alternative or direct equivalent if available. Always consider the application and

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •