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GE-20
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Unknown
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Basic Transistor and Cross Reference Specification |
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45.89KB
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1
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GE-20
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Unknown
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Vintage Transistor Datasheets |
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37.03KB
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1
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GE200K
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Cornell Dubilier
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Disc Ceramic Capacitors |
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131.52KB
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2
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GE200NB60S
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STMicroelectronics
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N-CHANNEL 150A - 600V - ISOTOP PowerMESH IGBT |
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263.63KB
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13
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GE2026
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GTM
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NPN EPITAXIAL PLANAR TRANSISTOR |
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389.81KB
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3
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GE-2093
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Amphenol Advanced Sensors
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FLUID TEMPERATURE SENSOR M14 X 1 |
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238.95KB
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GE-2093
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Amphenol Thermometrics
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FLUID TEMPERATURE SENSOR M14 X 1 |
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238.95KB
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GE20N03
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GTM
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N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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298.41KB
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5
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B772(RANGE:200-400)
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JCET Group
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PNP transistor in SOT-89-3L package with -40V collector-base voltage, -30V collector-emitter voltage, -3A continuous collector current, 0.5W power dissipation, and DC current gain ranging from 60 to 400. |
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3DD13003(RANGE:20-25)
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JCET Group
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NPN transistor in TO-252-2L package, rated for 400V collector-emitter voltage, 1.5A continuous collector current, with a DC current gain ranging from 8 to 40 and collector dissipation of 1.25W. |
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S9012 2T1(RANGE:200-350)
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JCET Group
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PNP transistor in SOT-23 package with -25V collector-emitter voltage, -500mA collector current, 300mW power dissipation, and DC current gain ranging from 120 to 400. |
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SS8050(RANGE:200-350)
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JCET Group
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NPN transistor in SOT-23 package with collector current up to 1.5 A, collector-emitter breakdown voltage of 25 V, DC current gain (hFE) from 120 to 400, and transition frequency of 100 MHz. |
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PXT8550(RANGE:200-350)
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JCET Group
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PXT8550 PNP transistor in SOT-89-3L package with -25 V collector-emitter voltage, -1.5 A continuous collector current, 0.5 W power dissipation, and DC current gain ranging from 85 to 400 depending on rank. |
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BC548(RANGE:200-450)
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JCET Group
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NPN transistor in TO-92 package with high voltage capability, complement to BC556/BC557/BC558; available in BC546, BC547, and BC548 variants with collector-emitter voltage ratings from 30V to 80V and DC current gain from 110 to 800. |
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BC546-TA(RANGE:200-450)
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JCET Group
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NPN transistor in TO-92 package with high voltage capability, complement to BC556/BC557/BC558; available in BC546, BC547, and BC548 variants with collector-emitter voltage ratings from 30V to 80V and DC current gain from 110 to 800. |
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SS8050-G(RANGE:200-350)
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JCET Group
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NPN transistor in SOT-23 package with 25V collector-emitter voltage, 1.5A collector current, 300mW power dissipation, and DC current gain ranging from 120 to 400, suitable for general-purpose switching and amplification applications. |
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MMBT1616A(RANGE:200-400)
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JCET Group
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MMBT1616A NPN transistor in SOT-23 package, rated for 60V collector-emitter voltage, 1A collector current, with hFE range 135–600, 100MHz transition frequency, and 350mW power dissipation. |
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2SC2712(RANGE:200-400)
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JCET Group
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NPN transistor in SOT-23 package with 50 V collector-emitter voltage, 150 mA continuous collector current, low noise figure of 1.0 dB typical, and DC current gain ranging from 70 to 700, suitable for audio frequency amplifier applications. |
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2SD596(RANGE:200-320)
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JCET Group
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NPN transistor in SOT-23 package with 25 V collector-emitter voltage, 700 mA continuous collector current, high DC current gain up to 400, and transition frequency of 170 MHz. |
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2SD1005(RANGE:200-400)
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JCET Group
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NPN transistor in SOT-89-3L package with 80V collector-emitter breakdown voltage, 1A collector current, high DC current gain linearity, and 160MHz transition frequency. |
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B772(RANGE:200-400)
