GE2003 Search Results
GE2003 Datasheets (34)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT5551-G(RANGE:200-300)
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JCET Group | MMBT5551 NPN transistor in SOT-23 package, rated for 160V collector-emitter voltage, 600mA collector current, with 300mW power dissipation and DC current gain ranging from 100 to 300 at 5V VCE. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
S9012-G(RANGE:200-350)
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JCET Group | PNP transistor in SOT-23 package with -25V collector-emitter voltage, -500mA collector current, 300mW power dissipation, and DC current gain ranging from 120 to 400. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
S9013-G(RANGE:200-350)
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JCET Group | NPN transistor in SOT-23 package with 500 mA collector current, 25 V collector-emitter voltage, 300 mW power dissipation, and DC current gain ranging from 120 to 400 depending on rank. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MPS2222A-TA(RANGE:200-300)
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JCET Group | NPN transistor in TO-92 package with 40 V collector-emitter voltage, 75 V collector-base voltage, 0.6 A continuous collector current, and 625 mW power dissipation, featuring a DC current gain (hFE) of 100 to 300. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SS8550(RANGE:200-350)
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JCET Group | SS8550 PNP transistor in SOT-23 package with -40V collector-base voltage, -25V collector-emitter voltage, -1.5A collector current, 500mW power dissipation, and DC current gain ranging from 120 to 400. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
S8550 2TY(RANGE:200-350)
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JCET Group | PNP transistor in SOT-23 package, rated for collector current of -0.5A, collector-emitter voltage of -25V, with DC current gain up to 400 and transition frequency of 150MHz. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N3904-TA(RANGE:200-300)
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JCET Group | NPN silicon epitaxial planar transistor in TO-92 package, rated for 40V collector-emitter voltage, 0.2A continuous collector current, with DC current gain up to 400 and transition frequency of 300MHz. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
S9013W(RANGE:200-350)
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JCET Group | NPN transistor in SOT-323 package with 40 V collector-base voltage, 25 V collector-emitter voltage, 500 mA collector current, 200 mW power dissipation, and DC current gain ranging from 120 to 400. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SS8550 Y2(RANGE:200-350)
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JCET Group | SS8550 PNP transistor in SOT-23 package with -25V collector-emitter voltage, -1.5A collector current, 300mW power dissipation, and DC current gain up to 400, suitable for high-current switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT5551(RANGE:200-300)
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JCET Group | NPN transistor in SOT-23 package, rated for 160V collector-emitter voltage, 600mA collector current, with a DC current gain up to 300 and transition frequency of 100MHz, suitable for medium power amplification and switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
S9012W(RANGE:200-350)
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JCET Group | S9012W is a PNP transistor in SOT-323 package with 40V collector-base voltage, 25V collector-emitter voltage, -500mA collector current, 200mW power dissipation, and DC current gain ranging from 120 to 400. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PXT8550(RANGE:200-350)
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JCET Group | PXT8550 PNP transistor in SOT-89-3L package with -25 V collector-emitter voltage, -1.5 A continuous collector current, 0.5 W power dissipation, and DC current gain ranging from 85 to 400 depending on rank. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
S9012 2T1(RANGE:200-350)
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JCET Group | PNP transistor in SOT-23 package with -25V collector-emitter voltage, -500mA collector current, 300mW power dissipation, and DC current gain ranging from 120 to 400. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SD596(RANGE:200-320)
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JCET Group | NPN transistor in SOT-23 package with 25 V collector-emitter voltage, 700 mA continuous collector current, high DC current gain up to 400, and transition frequency of 170 MHz. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SS8050-G(RANGE:200-350)
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JCET Group | NPN transistor in SOT-23 package with 25V collector-emitter voltage, 1.5A collector current, 300mW power dissipation, and DC current gain ranging from 120 to 400, suitable for general-purpose switching and amplification applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SS8050(RANGE:200-350)
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JCET Group | NPN transistor in SOT-23 package with collector current up to 1.5 A, collector-emitter breakdown voltage of 25 V, DC current gain (hFE) from 120 to 400, and transition frequency of 100 MHz. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT5401-G(RANGE:200-300)
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JCET Group | MMBT5401 PNP transistor in SOT-23 package, with -150 V collector-emitter voltage, -0.6 A collector current, 0.3 W power dissipation, and DC current gain up to 300, suited for medium power amplification and switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
M8050(RANGE:200-350)
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JCET Group | NPN transistor in SOT-23 package with 40V collector-base voltage, 25V collector-emitter voltage, 800mA collector current, 200mW power dissipation, and DC current gain ranging from 45 to 400 depending on operating conditions. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MPS2222A(RANGE:200-300)
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JCET Group | NPN transistor in TO-92 package with 40V collector-emitter voltage, 600mA continuous collector current, 625mW power dissipation, and DC current gain ranging from 100 to 300, suitable for general-purpose switching and amplification applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT5401(RANGE:200-300)
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JCET Group | MMBT5401 is a PNP transistor in SOT-23 package, rated for -150 V VCEO, -0.6 A collector current, with hFE ranging from 100 to 300, suitable for medium power amplification and switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
GE2003 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
iec 60357
Abstract: IEC 60061 GE2003-5462 GE2003
|
Original |
1500HRS GE2004-6394 GE2003-5462 DATASHEETG9240 2800K iec 60357 IEC 60061 GE2003-5462 GE2003 | |
iec 60357
Abstract: IEC 60061 GE2003
|
Original |
GE2004-6392 GE2003-5473 DATASHEETG9240 2800K DatasheetG924060CL iec 60357 IEC 60061 GE2003 |